| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A complete charge control model for HEMTs
|
Majumdar, Amlan
|
|
1997
|
41 |
11 |
p. 1825-1826
2 p.
|
artikel
|
| 2 |
A multistate switch based on the carrier tunneling and confinement effects of barrier
|
Guo, Der-Feng
|
|
1997
|
41 |
11 |
p. 1731-1734
4 p.
|
artikel
|
| 3 |
Analytical expression for operating speed of GaAs SCFL D-type flip-flops
|
Maeda, Tadashi
|
|
1997
|
41 |
11 |
p. 1687-1691
5 p.
|
artikel
|
| 4 |
Applications of bifurcation theory to thyristor turn-on and turn-off
|
Paisana, J.
|
|
1997
|
41 |
11 |
p. 1803-1809
7 p.
|
artikel
|
| 5 |
A revised model for carrier trapping-detrapping 1 f noise
|
Nemirovsky, Amikam
|
|
1997
|
41 |
11 |
p. 1811-1818
8 p.
|
artikel
|
| 6 |
A scheme for process simplification by using large-angle-tilt boron implantation through oxide spacer
|
Juang, M.H.
|
|
1997
|
41 |
11 |
p. 1721-1723
3 p.
|
artikel
|
| 7 |
Base and collector resistances in heterojunction bipolar transistors
|
Anholt, R.
|
|
1997
|
41 |
11 |
p. 1739-1743
5 p.
|
artikel
|
| 8 |
Characteristics of Si-based MSM photodetectors with an amorphous-crystalline heterojunction
|
Laih, Li-Hong
|
|
1997
|
41 |
11 |
p. 1693-1697
5 p.
|
artikel
|
| 9 |
Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide
|
Ren, F.
|
|
1997
|
41 |
11 |
p. 1751-1753
3 p.
|
artikel
|
| 10 |
Electrical instability and filamentation in ggMOS protection structures
|
Vashchenko, V.A.
|
|
1997
|
41 |
11 |
p. 1761-1767
7 p.
|
artikel
|
| 11 |
Frequency modulated microwave photoconductivity measurements for characterization of silicon wafers
|
Schieck, R.
|
|
1997
|
41 |
11 |
p. 1755-1760
6 p.
|
artikel
|
| 12 |
Hot-carrier effects in deep submicron SOI MOSFETs
|
Renn, S.H.
|
|
1997
|
41 |
11 |
p. 1769-1772
4 p.
|
artikel
|
| 13 |
Improved performances of InGaP Schottky contact with Ti/Pt/Au metals and MSM photodetectors by (NH4)2S x treatment
|
Lee, Ching-Ting
|
|
1997
|
41 |
11 |
p. 1715-1719
5 p.
|
artikel
|
| 14 |
Investigation of an AlInAs/GaInAs long-period-superlattice resonant-tunneling transistor
|
Cheng, Shiou-Ying
|
|
1997
|
41 |
11 |
p. 1707-1713
7 p.
|
artikel
|
| 15 |
Modified Boltzmann boundary conditions in junction theory
|
Van De Wiele, F.
|
|
1997
|
41 |
11 |
p. 1699-1706
8 p.
|
artikel
|
| 16 |
Overcoming the fill factor limit of double sided buried contact silicon solar cells
|
Ebong, A.U.
|
|
1997
|
41 |
11 |
p. 1745-1749
5 p.
|
artikel
|
| 17 |
Performance and optimization of monochromatic p n heteroface AlGaAs/GaAs photovoltaic cells
|
Algora, C.
|
|
1997
|
41 |
11 |
p. 1787-1793
7 p.
|
artikel
|
| 18 |
Physical compact collector-emitter breakdown model for heterojunction bipolar transistors
|
Anholt, R.
|
|
1997
|
41 |
11 |
p. 1735-1737
3 p.
|
artikel
|
| 19 |
Recessed gate GaN field effect transistor
|
Ren, F.
|
|
1997
|
41 |
11 |
p. 1819-1820
2 p.
|
artikel
|
| 20 |
Simplified energy-balance model for pragmatic multi-dimensional device simulation
|
Chang, Duckhyun
|
|
1997
|
41 |
11 |
p. 1795-1802
8 p.
|
artikel
|
| 21 |
Simulation of an Al x Ga1−x As ballistic diode using multivalley nonparabolic hydrodynamic balance equations
|
Cao, J.C.
|
|
1997
|
41 |
11 |
p. 1781-1785
5 p.
|
artikel
|
| 22 |
Substrate bias effect on blocking capability of a lateral p-channel MOSFET on SOI
|
Sumida, Hitoshi
|
|
1997
|
41 |
11 |
p. 1773-1779
7 p.
|
artikel
|
| 23 |
The quasi-three-dimensional optimum analysis of breakdown voltage of floating field-limiting rings
|
Tang, B.Q.
|
|
1997
|
41 |
11 |
p. 1821-1824
4 p.
|
artikel
|
| 24 |
Titanium and aluminum-titanium ohmic contacts to p-type SiC
|
Crofton, J.
|
|
1997
|
41 |
11 |
p. 1725-1729
5 p.
|
artikel
|
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