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                             24 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A complete charge control model for HEMTs Majumdar, Amlan
1997
41 11 p. 1825-1826
2 p.
artikel
2 A multistate switch based on the carrier tunneling and confinement effects of barrier Guo, Der-Feng
1997
41 11 p. 1731-1734
4 p.
artikel
3 Analytical expression for operating speed of GaAs SCFL D-type flip-flops Maeda, Tadashi
1997
41 11 p. 1687-1691
5 p.
artikel
4 Applications of bifurcation theory to thyristor turn-on and turn-off Paisana, J.
1997
41 11 p. 1803-1809
7 p.
artikel
5 A revised model for carrier trapping-detrapping 1 f noise Nemirovsky, Amikam
1997
41 11 p. 1811-1818
8 p.
artikel
6 A scheme for process simplification by using large-angle-tilt boron implantation through oxide spacer Juang, M.H.
1997
41 11 p. 1721-1723
3 p.
artikel
7 Base and collector resistances in heterojunction bipolar transistors Anholt, R.
1997
41 11 p. 1739-1743
5 p.
artikel
8 Characteristics of Si-based MSM photodetectors with an amorphous-crystalline heterojunction Laih, Li-Hong
1997
41 11 p. 1693-1697
5 p.
artikel
9 Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide Ren, F.
1997
41 11 p. 1751-1753
3 p.
artikel
10 Electrical instability and filamentation in ggMOS protection structures Vashchenko, V.A.
1997
41 11 p. 1761-1767
7 p.
artikel
11 Frequency modulated microwave photoconductivity measurements for characterization of silicon wafers Schieck, R.
1997
41 11 p. 1755-1760
6 p.
artikel
12 Hot-carrier effects in deep submicron SOI MOSFETs Renn, S.H.
1997
41 11 p. 1769-1772
4 p.
artikel
13 Improved performances of InGaP Schottky contact with Ti/Pt/Au metals and MSM photodetectors by (NH4)2S x treatment Lee, Ching-Ting
1997
41 11 p. 1715-1719
5 p.
artikel
14 Investigation of an AlInAs/GaInAs long-period-superlattice resonant-tunneling transistor Cheng, Shiou-Ying
1997
41 11 p. 1707-1713
7 p.
artikel
15 Modified Boltzmann boundary conditions in junction theory Van De Wiele, F.
1997
41 11 p. 1699-1706
8 p.
artikel
16 Overcoming the fill factor limit of double sided buried contact silicon solar cells Ebong, A.U.
1997
41 11 p. 1745-1749
5 p.
artikel
17 Performance and optimization of monochromatic p n heteroface AlGaAs/GaAs photovoltaic cells Algora, C.
1997
41 11 p. 1787-1793
7 p.
artikel
18 Physical compact collector-emitter breakdown model for heterojunction bipolar transistors Anholt, R.
1997
41 11 p. 1735-1737
3 p.
artikel
19 Recessed gate GaN field effect transistor Ren, F.
1997
41 11 p. 1819-1820
2 p.
artikel
20 Simplified energy-balance model for pragmatic multi-dimensional device simulation Chang, Duckhyun
1997
41 11 p. 1795-1802
8 p.
artikel
21 Simulation of an Al x Ga1−x As ballistic diode using multivalley nonparabolic hydrodynamic balance equations Cao, J.C.
1997
41 11 p. 1781-1785
5 p.
artikel
22 Substrate bias effect on blocking capability of a lateral p-channel MOSFET on SOI Sumida, Hitoshi
1997
41 11 p. 1773-1779
7 p.
artikel
23 The quasi-three-dimensional optimum analysis of breakdown voltage of floating field-limiting rings Tang, B.Q.
1997
41 11 p. 1821-1824
4 p.
artikel
24 Titanium and aluminum-titanium ohmic contacts to p-type SiC Crofton, J.
1997
41 11 p. 1725-1729
5 p.
artikel
                             24 gevonden resultaten
 
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