Digital Library
Close Browse articles from a journal
 
Search for with title:
ABCDEFGHIJKLMNOPQRSTUVWXYZ

     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
                                       All articles of the corresponding issues
 
                             169 results found
no title author magazine year volume issue page(s) type
1 Absorption saturation mechanism in short-period GaAs AlAs superlattice self-electro-optic effect devices based on Wannier-Stark localization Mimura, H.
 1996
 40 1-8 p. 171-174
4 p.
 article
2 A.c. field assisted current in GaAs-AlGaAs superlattices Iñarrea, J.
 1996
 40 1-8 p. 295-298
4 p.
 article
3 An epitaxial Si SiO2 superlattice barrier Tsu, R.
 1996
 40 1-8 p. 221-223
3 p.
 article
4 Anomalously delayed carrier transport in GaAs AlAs thin-barrier superlattices Ohtani, N
 1996
 40 1-8 p. 759-762
4 p.
 article
5 Anti-Stokes photoluminescence from Si modulation doped Al y Ga 1−y As Al x Ga 1−x As QW and Si double delta doped Al x Ga1−xAs Junnarkar, M.R
 1996
 40 1-8 p. 665-671
7 p.
 article
6 Application of quantum Hall devices for FIR detection Suchalkin, S
 1996
 40 1-8 p. 469-472
4 p.
 article
7 Assembling strained InAs islands by chemical beam epitaxy Miller, M.S
 1996
 40 1-8 p. 609-614
6 p.
 article
8 Band-filling in InP dots: Single dot spectroscopy and carrier dynamics Pistol, M.-E.
 1996
 40 1-8 p. 357-361
5 p.
 article
9 Band gap opening and charge modulation in AlGaAs lateral structures obtained by organized epitaxy Sfaxi, L.
 1996
 40 1-8 p. 271-273
3 p.
 article
10 Band structure of strained quantum wells grown on novel index surfaces Los, J.
 1996
 40 1-8 p. 117-121
5 p.
 article
11 Carrier transfer and capture into quantum wire arrays grown on V-groove substrates Haacke, S.
 1996
 40 1-8 p. 299-302
4 p.
 article
12 Cathodoluminescence imaging of electric-field domains in semiconductor superlattices Kwok, S.H
 1996
 40 1-8 p. 527-530
4 p.
 article
13 Charge excitations of quantum dots in magnetic fields Martín-Moreno, L.
 1996
 40 1-8 p. 21-24
4 p.
 article
14 Coherence and phase sensitive measurements in a quantum dot Yacoby, A.
 1996
 40 1-8 p. 225-231
7 p.
 article
15 Conduction electrons bound to magneto-donors and magneto-acceptors in GaAs GaAlAs quantum wells Vicente, P.
 1996
 40 1-8 p. 109-112
4 p.
 article
16 Consequences of interface corrugation on the lattice dynamics and Raman spectra in high-index AlAs GaAs superlattices Castrillo, P.
 1996
 40 1-8 p. 175-180
6 p.
 article
17 Correlation between intersubband Raman scattering and electric-field domains in quantum-well structures Murugkar, S.
 1996
 40 1-8 p. 153-155
3 p.
 article
18 Current bistability in InGaAs quantum wire p-i-n heterostructures Cingolani, R
 1996
 40 1-8 p. 437-439
3 p.
 article
19 Cyclotron oscillations in a tilted magnetic field: A tool to measure the mean free path of ballistic electrons in high purity GaAs Brill, B
 1996
 40 1-8 p. 387-390
4 p.
 article
20 Cyclotron resonance of electron-hole systems in InAs/GaSb/AlSb Warburton, R.J
 1996
 40 1-8 p. 679-682
4 p.
 article
21 Density-functional theory of quantum dots in the high magnetic field limit Stoof, T.H.
 1996
 40 1-8 p. 349-352
4 p.
 article
22 Dependence of the linear and quadratic electrooptical coefficients on the quantum well thickness Prieto, J.A
 1996
 40 1-8 p. 767-770
4 p.
 article
23 Dephasing and quantum beat of excitons in a ZnSe ZnSSe layer structure Wagner, H.P
 1996
 40 1-8 p. 745-749
5 p.
 article
24 Dimensionality effects on strain for lattice-mismatched InAsP InP quantum wires: The relationship between strain and 2D quantum confinement Notomi, M
 1996
 40 1-8 p. 579-582
4 p.
 article
25 Direct measurement of exciton diffusion in quantum wells Heller, W
 1996
 40 1-8 p. 725-728
4 p.
 article
26 3D-to-1D carrier scattering in GaAs V-groove quantum wires Kiener, C.
 1996
 40 1-8 p. 257-260
4 p.
 article
27 1D X-ray speckle patterns: A novel probe of interfacial disorder in semiconductor superlattices Abernathy, D.L
 1996
 40 1-8 p. 531-535
5 p.
 article
28 Dynamics of electric-field domains and chaos in semiconductor superlattices Bonilla, L.L.
 1996
 40 1-8 p. 161-165
5 p.
 article
29 Editorial Board 1996
 40 1-8 p. CO2-
1 p.
 article
30 Effect of lateral confinement on excitonic wavefunctions in T-shaped edge quantum wires Someya, T.
 1996
 40 1-8 p. 315-318
4 p.
 article
31 Effects of Coulomb interaction in the magneto-capacitance of quantum wires Govorov, A.O.
 1996
 40 1-8 p. 311-314
4 p.
 article
32 Efficient green luminescence from a type-II neighboring confinement structure realized in an AlP GaP system Issiki, F.
 1996
 40 1-8 p. 43-46
4 p.
 article
33 Elastic strains in GaAs AlAs quantum dots studied by high resolution X-ray diffraction Holy, V
 1996
 40 1-8 p. 373-377
5 p.
 article
34 Electric-field-induced exciton transport in coupled quantum well structures Hagn, M
 1996
 40 1-8 p. 429-431
3 p.
 article
35 Electron capture in AlGaAs/AlAs/GaAs double-barrier quantum well structures: Tunneling versus intervalley scattering Schneider, H.
 1996
 40 1-8 p. 133-137
5 p.
 article
36 Electron scattering from acoustic phonons in quantum dots and other nanostructures Knipp, P.A.
 1996
 40 1-8 p. 343-347
5 p.
 article
37 Electron spin-flip Raman scattering in asymmetric quantum wells: Spin orientation Richards, D.
 1996
 40 1-8 p. 127-131
5 p.
 article
38 Electro-optic tuning of vacuum Rabi coupling in semiconductor quantum microcavity structures Fisher, T.A
 1996
 40 1-8 p. 493-496
4 p.
 article
39 Evolution of GaAs quantum well excitons with excess electron density and magnetic field Shields, A.J.
 1996
 40 1-8 p. 275-280
6 p.
 article
40 Excitations of a drifting 2DEG Bhatti, A.S
 1996
 40 1-8 p. 719-723
5 p.
 article
41 Exciton diffusion dynamics in SiGe Si quantum wells on a V-groove patterned Si substrate Usami, N
 1996
 40 1-8 p. 733-736
4 p.
 article
42 Exciton dynamics and spin-flip in tensile strained quantum wells Pérez, E
 1996
 40 1-8 p. 737-740
4 p.
 article
43 Extreme field-induced cyclotron mass variations in coupled double quantum wells Harff, N.E.
 1996
 40 1-8 p. 29-33
5 p.
 article
44 Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors Lipsanen, H
 1996
 40 1-8 p. 601-604
4 p.
 article
45 Fabrication of quantum wires on GaAs substrates patterned by in situ electron-beam lithography López, M
 1996
 40 1-8 p. 627-631
5 p.
 article
46 Fabrication of Si nanostructures by controlled sidewall oxidation Beton, P.H.
 1996
 40 1-8 p. 265-269
5 p.
 article
47 Far-infrared-study of shallow etched quantum wires on high mobility GaAs AlGaAs heterostructures and quantum-wells Roßkopf, V.
 1996
 40 1-8 p. 333-337
5 p.
 article
48 Fermi-edge singularities in the optical emission of doped direct and indirect quantum wells Rodríguez, F.J.
 1996
 40 1-8 p. 101-103
3 p.
 article
49 First demonstration of a planar-type surface tunnel transistor (STT): Lateral interband tunnel device Uemura, T
 1996
 40 1-8 p. 519-522
4 p.
 article
50 Formation of Si quantum dots in nanocrystalline silicon Schoenfeld, O
 1996
 40 1-8 p. 605-608
4 p.
 article
51 GaAs Al0.3Ga0.7As resonant tunneling diodes with atomically flat interfaces grown on (411)A GaAs substrates by MBE Shimomura, S
 1996
 40 1-8 p. 417-420
4 p.
 article
52 Gate-controlled modulation of electronic states and conductance in coupled quantum wells having an in-plane periodic potential Ohno, Y.
 1996
 40 1-8 p. 303-305
3 p.
 article
53 Growth and characterization of InSb InP short-period strained-layer superlattices grown by almbe Utzmeier, T
 1996
 40 1-8 p. 621-626
6 p.
 article
54 Growth and optical investigation of quaternary GaInAsSb AlGaAsSb quantum wells Shen, S.C.
 1996
 40 1-8 p. 143-147
5 p.
 article
55 Growth and properties of HgSe:Fe quantum wells and superlattices Schikora, D.
 1996
 40 1-8 p. 63-67
5 p.
 article
56 High conductance in random superlattices with correlated disorder Diez, E
 1996
 40 1-8 p. 433-436
4 p.
 article
57 InAs GaAs quantum boxes obtained by self-organized growth: Intrinsic electronic properties and applications Gérard, J.M
 1996
 40 1-8 p. 807-814
8 p.
 article
58 Inelastic light scattering from electronic excitations in deep-etched quantum dots and wires Lockwood, D.J.
 1996
 40 1-8 p. 339-342
4 p.
 article
59 Influence of spatial doping correlation on scattering times studied in gated and ungated GaAs AlGaAs quantum wells under hydrostatic pressure Brunthaler, G.
 1996
 40 1-8 p. 105-108
4 p.
 article
60 Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented InGaAs GaAs heterostructures Guimarães, F.E.G
 1996
 40 1-8 p. 659-663
5 p.
 article
61 Infrared absorption in p-type SiGe Si quantum wells: Intersubband transition and free carrier contributions Zanier, S.
 1996
 40 1-8 p. 123-126
4 p.
 article
62 Interface and layer thickness dependence of the effective mass in InAs GaSb superlattices studied by high field cyclotron resonance Nicholas, R.J.
 1996
 40 1-8 p. 181-184
4 p.
 article
63 Interface electroluminescence of confined carriers in type II broken-gap p- GaInAsSb p-InAs single heterojunction Mikhailova, M.P
 1996
 40 1-8 p. 673-677
5 p.
 article
64 Interplay of 2D and 3D charge carriers in Si-δ-doped InSb layers grown epitaxially on GaAs De Keyser, A
 1996
 40 1-8 p. 395-398
4 p.
 article
65 Intersubband far-infrared emission and magnetotransport of 2D hole gas in a strong in-plane electric field and transverse magnetic fields Churakov, G.V
 1996
 40 1-8 p. 391-393
3 p.
 article
66 Intersubband lifetimes in Si SiGe quantum wells Heiss, W.
 1996
 40 1-8 p. 59-62
4 p.
 article
67 Intersubband Raman scattering in InAs AlSb quantum wells Wagner, J.
 1996
 40 1-8 p. 281-285
5 p.
 article
68 Investigation of inversion-asymmetry effects on the band structure of Sn1Ge n superlattices Lew Yan Voon, L.C.
 1996
 40 1-8 p. 191-195
5 p.
 article
69 Investigation of low power all-optical bistability in an InGaAs-InAlAs superlattice Couturier, J
 1996
 40 1-8 p. 453-457
5 p.
 article
70 Lateral electron depletion in focused-ion-beam implanted pseudomorphic heterostructures with In x Ga1−x As channels De Vries, D.K
 1996
 40 1-8 p. 637-640
4 p.
 article
71 Level crossing of nanometer sized InAs islands in GaAs Kowalski, B
 1996
 40 1-8 p. 367-371
5 p.
 article
72 Light emitting devices using porous silicon and porous silicon carbide Mimura, H
 1996
 40 1-8 p. 501-504
4 p.
 article
73 Light-emitting diodes fabricated with conjugated polymers Baigent, D.R
 1996
 40 1-8 p. 477-485
9 p.
 article
74 Light-scattering determination of electron tunneling gaps in double quantum wells Plaut, A.S.
 1996
 40 1-8 p. 291-293
3 p.
 article
75 Magnetic field effects in the luminescence spectra of type II GaAs AlAs double layer structures Trüby, A.
 1996
 40 1-8 p. 139-141
3 p.
 article
76 Magnetooptical investigations of symmetrically strained (GaIn)As Ga(PAs) multiple quantum well structures Volk, M
 1996
 40 1-8 p. 585-589
5 p.
 article
77 Magneto-optical properties of self-organized strained InGaAs quantum disks Weman, H
 1996
 40 1-8 p. 379-382
4 p.
 article
78 Magneto-optical studies of compressively strained GaInP AlGaInP multiple quantum wells Kinder, D
 1996
 40 1-8 p. 597-600
4 p.
 article
79 Magneto-optical studies of semimagnetic superlattices Yakovlev, D.R.
 1996
 40 1-8 p. 35-41
7 p.
 article
80 Magneto-optical studies of the type I/type II crossover and band offset in ZnTe Zn1−xMnxTe superlattices in magnetic fields up to 45 T Cheng, H.H.
 1996
 40 1-8 p. 69-74
6 p.
 article
81 Magneto-optical transitions in the presence of a two-dimensional hole gas Gravier, L
 1996
 40 1-8 p. 697-699
3 p.
 article
82 Magnetotransport of two-dimensional electron gas in Si SiGe modulation doped structures grown by gas source molecular beam epitaxy Matsumura, A
 1996
 40 1-8 p. 399-403
5 p.
 article
83 Magneto transport on antidot arrays, fabricated by an atomic force microscope Wendel, M.
 1996
 40 1-8 p. 25-28
4 p.
 article
84 Magnetotransport phenomena in single AlGaAs GaAs quantum wires grown on laterally patterned substrates Tornow, M.
 1996
 40 1-8 p. 323-328
6 p.
 article
85 Many body effects and charge carrier kinetics studied by electro-optical experiments in type-I hetero n-i-p-i structures with selective contacts Schultz, J
 1996
 40 1-8 p. 683-686
4 p.
 article
86 Many body effects in the luminescence of In0.53Ga0.47As InP quantum wires Wang, K.H.
 1996
 40 1-8 p. 287-289
3 p.
 article
87 MBE growth of submicron carrier confinement structures on patterned GaAs(111)A substrates using only silicon dopant Fujita, K
 1996
 40 1-8 p. 633-636
4 p.
 article
88 Mesoscopic conductance fluctuations in impurity-assisted resonant tunnelling Mcdonnell, P
 1996
 40 1-8 p. 409-412
4 p.
 article
89 Metal-insulator transition in Sb-doped short period Si SiGe superlattices Stöger, G.
 1996
 40 1-8 p. 47-51
5 p.
 article
90 Microscopic structure of strained InGaAs GaAs heterostructures Proietti, M.G
 1996
 40 1-8 p. 653-658
6 p.
 article
91 Modeling effects of focused ion beams Stern, F
 1996
 40 1-8 p. 523-525
3 p.
 article
92 Modulation of Fano resonances by an external magnetic field in semiconductor quantum wells Bellani, V.
 1996
 40 1-8 p. 85-88
4 p.
 article
93 Nonguiding semiconductor microcavity: Exciton-photon mode splitting and photoluminescence dynamics Bloch, J
 1996
 40 1-8 p. 487-491
5 p.
 article
94 Nonlinear optical studies of Bloch oscillations Leisching, P
 1996
 40 1-8 p. 545-549
5 p.
 article
95 Non-uniform strain relaxation in In x Ga1−x As layers Alvarez, A.L
 1996
 40 1-8 p. 647-651
5 p.
 article
96 Novel cleaved edge overgrowth structures for tunneling into one- and two-dimensional electron systems Grayson, M.
 1996
 40 1-8 p. 233-236
4 p.
 article
97 Observation of giant birefringence and dichroism in InP-AlInAs type II superlattices Seidel, W
 1996
 40 1-8 p. 729-732
4 p.
 article
98 Optical and electrical characterization of GaN layers grown on silicon and sapphire substrates Sánchez-García, M.A.
 1996
 40 1-8 p. 81-84
4 p.
 article
99 Optical investigation of impurity bands in a delta-doped n-layer Schönhut, J
 1996
 40 1-8 p. 701-705
5 p.
 article
100 Optically detected impurity D0 and D− transitions in GaAs quantum wells Kono, J.
 1996
 40 1-8 p. 93-96
4 p.
 article
101 Optical properties of boron modulation-doped SiGe quantum wells and Si thin films Buyanova, I.A.
 1996
 40 1-8 p. 53-57
5 p.
 article
102 Optical studies of acceptor centre doped GaAs AlGaAs quantum wells Ferreira, A.C.
 1996
 40 1-8 p. 89-92
4 p.
 article
103 Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing Ledentsov, N.N
 1996
 40 1-8 p. 785-798
14 p.
 article
104 Ordering of nanoscale InP islands on strain-modulated InGaP buffer layers Häusler, K
 1996
 40 1-8 p. 803-806
4 p.
 article
105 Organising committee, programme committee, international committee and sponsors 1996
 40 1-8 p. xix-
1 p.
 article
106 Oscillating electric field domains in GaAs AlAs superlattices Kastrup, J.
 1996
 40 1-8 p. 157-160
4 p.
 article
107 Oscillation of the scattering time in a 2D electron system with oval antidots Gusev, G.M
 1996
 40 1-8 p. 441-446
6 p.
 article
108 Phonon Raman scattering in quantum wires Rubio, J
 1996
 40 1-8 p. 707-710
4 p.
 article
109 Phonons in single thin epitaxial layers of InAs on InP Quagliano, L.G
 1996
 40 1-8 p. 711-714
4 p.
 article
110 Photo- and cathodoluminescence of AlGaAs single quantum wires on vicinal GaAs (110) surfaces Nakashima, H.
 1996
 40 1-8 p. 319-322
4 p.
 article
111 Photoluminescence enhancement induced by near surface Si doping wires in GaAs Ramsteiner, M.
 1996
 40 1-8 p. 329-332
4 p.
 article
112 Photoluminescence from submonolayer Ge embedded in Si(100) Sunamura, H
 1996
 40 1-8 p. 693-696
4 p.
 article
113 Photoluminescence quantum yield in GaAs AlAs superlattices Aaviksoo, J
 1996
 40 1-8 p. 687-691
5 p.
 article
114 Photon-assisted tunneling in coupled double quantum wells Blanke, G
 1996
 40 1-8 p. 421-424
4 p.
 article
115 Plasmon dispersion for a modulated two-dimensional electron gas Richards, D.
 1996
 40 1-8 p. 203-207
5 p.
 article
116 Preface Calleja, J.M.
 1996
 40 1-8 p. xvii-
1 p.
 article
117 Probing resonant tunneling and charge accumulation via capacitance measurements in [111]-oriented InGaAs GaAs MQW and superlattices Sánchez-Rojas, J.L
 1996
 40 1-8 p. 591-595
5 p.
 article
118 Pyramidal quantum dot structures by self-limited selective area metalorganic vapor phase epitaxy Fukui, T
 1996
 40 1-8 p. 799-802
4 p.
 article
119 Quantized conductance in a Si Si0.7Ge0.3 split-gate device and impurity-related magnetotransport phenomena Többen, D
 1996
 40 1-8 p. 405-408
4 p.
 article
120 Quantum chaotic transport in double barrier tunnel structures Fromhold, T.M.
 1996
 40 1-8 p. 7-14
8 p.
 article
121 Quantum functional devices for advanced electronics Yokoyama, N
 1996
 40 1-8 p. 505-511
7 p.
 article
122 Raman scattering by plasmons in deep etched quantum wires Dahl, C.
 1996
 40 1-8 p. 261-264
4 p.
 article
123 Relaxation and recombination in ultrasmall InAs quantum dots Bogani, F
 1996
 40 1-8 p. 363-366
4 p.
 article
124 Residual strain in Si-Si1−x Ge x quantum dots Tang, Y.S
 1996
 40 1-8 p. 383-386
4 p.
 article
125 Resonant cavity light emitting diodes for the 3–5 μm range Hadji, E
 1996
 40 1-8 p. 473-476
4 p.
 article
126 Resonant magnetotunnelling spectroscopy of a quantum loop Nogaret, A
 1996
 40 1-8 p. 447-451
5 p.
 article
127 Resonant tunneling and intrinsic bistability in GaSb-based double barrier heterostructures Jimenez, J.L
 1996
 40 1-8 p. 583-584
2 p.
 article
128 Resonant tunneling through rare earth arsenide, semimetal quantum wells Brehmer, D.E.
 1996
 40 1-8 p. 241-244
4 p.
 article
129 Second-order resonant Raman scattering in semiconductor quantum wells under high magnetic fields Cros, A
 1996
 40 1-8 p. 715-718
4 p.
 article
130 Second-order susceptibilities related to valence-band transitions in asymmetric Si SiGe quantum wells Kruck, P
 1996
 40 1-8 p. 763-766
4 p.
 article
131 Self-ordering mechanism of quantum wires grown on nonplanar substrates Kapon, E
 1996
 40 1-8 p. 815-818
4 p.
 article
132 Self-organized growth of quantum-dot structures Nötzel, R
 1996
 40 1-8 p. 777-783
7 p.
 article
133 Semiconductor microcavity under magnetic field: From the weak coupling to the strong coupling regime Tignon, J
 1996
 40 1-8 p. 497-500
4 p.
 article
134 Short period superlattices under hydrostatic pressure Gassot, P.
 1996
 40 1-8 p. 185-189
5 p.
 article
135 Single electron charging and single electron tunneling in sub-micron AlGaAs GaAs double barrier transistor structures Austing, D.G.
 1996
 40 1-8 p. 237-240
4 p.
 article
136 Single-electron-tunneling spectroscopy of asymmetric laterally confined double-barrier heterostructures Schmidt, T.
 1996
 40 1-8 p. 15-19
5 p.
 article
137 Spectroscopic observation of magnetic MnTe submonolayer insertions in II–VI heterostructures Ulmer-Tuffigo, H.
 1996
 40 1-8 p. 75-79
5 p.
 article
138 Spin splitting of excitons in GaAs quantum wells at zero magnetic field Muñoz, L
 1996
 40 1-8 p. 755-758
4 p.
 article
139 Strain induced self organized growth of lateral periodic strained layer superlattices on off-oriented substrates by metalorganic vapour phase epitaxy Marschner, T
 1996
 40 1-8 p. 819-823
5 p.
 article
140 Strain measurement in thin pseudomorphic SiGe layers of submicron wires using Raman spectroscopy Dietrich, B.
 1996
 40 1-8 p. 307-310
4 p.
 article
141 Strong magnetic field dependence of laser emission from quantum wires formed by cleaved edge overgrowth Wegscheider, W.
 1996
 40 1-8 p. 1-6
6 p.
 article
142 Structural aspects of the growth of InAs islands on InP substrate Ponchet, A
 1996
 40 1-8 p. 615-619
5 p.
 article
143 Structural properties of Ga28P13 clusters encapsulated in zeolite Y Porto, J.A
 1996
 40 1-8 p. 771-775
5 p.
 article
144 Studies of carrier relaxation in low dimensional structures Sung, C.Y
 1996
 40 1-8 p. 751-754
4 p.
 article
145 Sum frequency generation by intersubband transition in step quantum wells Liu, H.C
 1996
 40 1-8 p. 567-570
4 p.
 article
146 Surface modifications in strained-layer heteroepitaxy studied by UHV-scanning tunneling microscopy Springholz, G
 1996
 40 1-8 p. 571-577
7 p.
 article
147 Synthesis and optical properties of CdS and Ge clusters in zeolite cages Aparisi, A
 1996
 40 1-8 p. 641-645
5 p.
 article
148 Temperature studies of the tunnelling between parallel two-dimensional electron gases Turner, N
 1996
 40 1-8 p. 413-415
3 p.
 article
149 Temporally correlated transport and suppression of shot noise in a ballistic quantum point contact Reznikov, M
 1996
 40 1-8 p. 513-517
5 p.
 article
150 The effect of resonant sublevel coupling on intersubband transitions in coupled double quantum wells Hartung, M.
 1996
 40 1-8 p. 113-115
3 p.
 article
151 The effects of photogenerated free carriers and microwave electron heating on exciton dynamics in GaAs AlGaAs quantum wells Ashkinadze, B.M
 1996
 40 1-8 p. 561-565
5 p.
 article
152 Time and spatial resolved photoluminescence from a single quantum dot Watabe, H
 1996
 40 1-8 p. 537-540
4 p.
 article
153 Time-dependent study of the photoionization of an electron out of a quantum well in an electric field Vinter, B.
 1996
 40 1-8 p. 149-152
4 p.
 article
154 Time-resolved exciton dynamics and stimulated emission from ZnCdSe ZnSe multiple quantum well structures Taylor, R.A
 1996
 40 1-8 p. 741-743
3 p.
 article
155 Time-resolved optical investigations of bloch oscillations in semiconductor superlattices Dekorsy, T
 1996
 40 1-8 p. 551-554
4 p.
 article
156 Time resolved photoinduced intersubband absorption: A novel and powerful way of studying the dynamics of quantum structure carriers Duer, R
 1996
 40 1-8 p. 555-559
5 p.
 article
157 Time resolved spectroscopy of single quantum dot structures Bockelmann, U
 1996
 40 1-8 p. 541-544
4 p.
 article
158 Transient negative photocurrent and out-of-well dipole kinetics in novel piezoelectric InGaAs GaAs MQW pin diodes Izpura, I
 1996
 40 1-8 p. 463-467
5 p.
 article
159 Transparent self-electro-optic effect device based on Wannier-Stark localization in unstrained In x Ga 1−x As In x Al 1−x As superlattices on GaAs substrate Tominaga, K
 1996
 40 1-8 p. 459-462
4 p.
 article
160 Transport anomalies in electron billiards with a lack of symmetry Budantsev, M.V.
 1996
 40 1-8 p. 213-215
3 p.
 article
161 Tunneling currents in mesoscopic rings Chiappe, G.
 1996
 40 1-8 p. 209-212
4 p.
 article
162 Tunneling in double quantum wells with scatterings: A density matrix approach Ferreira, R
 1996
 40 1-8 p. 425-427
3 p.
 article
163 Two-dimensional A+ states in boron doped SiGe quantum structures Yassievich, I.N.
 1996
 40 1-8 p. 97-99
3 p.
 article
164 Two-dimensional electrons in a magnetic superlattice Carmona, H.A.
 1996
 40 1-8 p. 217-220
4 p.
 article
165 Two types of mesoscopic fluctuations in a high magnetic field due to bulk and boundary diffusion Bykov, A.A.
 1996
 40 1-8 p. 353-355
3 p.
 article
166 V-grooved quantum wires as prototypes of 1D-systems: Single particle properties and correlation effects Rossi, F.
 1996
 40 1-8 p. 249-255
7 p.
 article
167 Visible light emitting Si SiO2 superlattices Lu, Z.H.
 1996
 40 1-8 p. 197-201
5 p.
 article
168 Wannier-Stark ladder spectra in InxGa1−xAsGaAs strained layer piezo-electric superlattices Peggs, D.W.
 1996
 40 1-8 p. 167-170
4 p.
 article
169 Wannier-Stark oscillations in Zener tunneling currents Nagasawa, H.
 1996
 40 1-8 p. 245-247
3 p.
 article
                             169 results found
 
 Koninklijke Bibliotheek - National Library of the Netherlands