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                             169 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Absorption saturation mechanism in short-period GaAs AlAs superlattice self-electro-optic effect devices based on Wannier-Stark localization Mimura, H.
 1996
 40 1-8 p. 171-174
4 p.
 artikel
2 A.c. field assisted current in GaAs-AlGaAs superlattices Iñarrea, J.
 1996
 40 1-8 p. 295-298
4 p.
 artikel
3 An epitaxial Si SiO2 superlattice barrier Tsu, R.
 1996
 40 1-8 p. 221-223
3 p.
 artikel
4 Anomalously delayed carrier transport in GaAs AlAs thin-barrier superlattices Ohtani, N
 1996
 40 1-8 p. 759-762
4 p.
 artikel
5 Anti-Stokes photoluminescence from Si modulation doped Al y Ga 1−y As Al x Ga 1−x As QW and Si double delta doped Al x Ga1−xAs Junnarkar, M.R
 1996
 40 1-8 p. 665-671
7 p.
 artikel
6 Application of quantum Hall devices for FIR detection Suchalkin, S
 1996
 40 1-8 p. 469-472
4 p.
 artikel
7 Assembling strained InAs islands by chemical beam epitaxy Miller, M.S
 1996
 40 1-8 p. 609-614
6 p.
 artikel
8 Band-filling in InP dots: Single dot spectroscopy and carrier dynamics Pistol, M.-E.
 1996
 40 1-8 p. 357-361
5 p.
 artikel
9 Band gap opening and charge modulation in AlGaAs lateral structures obtained by organized epitaxy Sfaxi, L.
 1996
 40 1-8 p. 271-273
3 p.
 artikel
10 Band structure of strained quantum wells grown on novel index surfaces Los, J.
 1996
 40 1-8 p. 117-121
5 p.
 artikel
11 Carrier transfer and capture into quantum wire arrays grown on V-groove substrates Haacke, S.
 1996
 40 1-8 p. 299-302
4 p.
 artikel
12 Cathodoluminescence imaging of electric-field domains in semiconductor superlattices Kwok, S.H
 1996
 40 1-8 p. 527-530
4 p.
 artikel
13 Charge excitations of quantum dots in magnetic fields Martín-Moreno, L.
 1996
 40 1-8 p. 21-24
4 p.
 artikel
14 Coherence and phase sensitive measurements in a quantum dot Yacoby, A.
 1996
 40 1-8 p. 225-231
7 p.
 artikel
15 Conduction electrons bound to magneto-donors and magneto-acceptors in GaAs GaAlAs quantum wells Vicente, P.
 1996
 40 1-8 p. 109-112
4 p.
 artikel
16 Consequences of interface corrugation on the lattice dynamics and Raman spectra in high-index AlAs GaAs superlattices Castrillo, P.
 1996
 40 1-8 p. 175-180
6 p.
 artikel
17 Correlation between intersubband Raman scattering and electric-field domains in quantum-well structures Murugkar, S.
 1996
 40 1-8 p. 153-155
3 p.
 artikel
18 Current bistability in InGaAs quantum wire p-i-n heterostructures Cingolani, R
 1996
 40 1-8 p. 437-439
3 p.
 artikel
19 Cyclotron oscillations in a tilted magnetic field: A tool to measure the mean free path of ballistic electrons in high purity GaAs Brill, B
 1996
 40 1-8 p. 387-390
4 p.
 artikel
20 Cyclotron resonance of electron-hole systems in InAs/GaSb/AlSb Warburton, R.J
 1996
 40 1-8 p. 679-682
4 p.
 artikel
21 Density-functional theory of quantum dots in the high magnetic field limit Stoof, T.H.
 1996
 40 1-8 p. 349-352
4 p.
 artikel
22 Dependence of the linear and quadratic electrooptical coefficients on the quantum well thickness Prieto, J.A
 1996
 40 1-8 p. 767-770
4 p.
 artikel
23 Dephasing and quantum beat of excitons in a ZnSe ZnSSe layer structure Wagner, H.P
 1996
 40 1-8 p. 745-749
5 p.
 artikel
24 Dimensionality effects on strain for lattice-mismatched InAsP InP quantum wires: The relationship between strain and 2D quantum confinement Notomi, M
 1996
 40 1-8 p. 579-582
4 p.
 artikel
25 Direct measurement of exciton diffusion in quantum wells Heller, W
 1996
 40 1-8 p. 725-728
4 p.
 artikel
26 3D-to-1D carrier scattering in GaAs V-groove quantum wires Kiener, C.
 1996
 40 1-8 p. 257-260
4 p.
 artikel
27 1D X-ray speckle patterns: A novel probe of interfacial disorder in semiconductor superlattices Abernathy, D.L
 1996
 40 1-8 p. 531-535
5 p.
 artikel
28 Dynamics of electric-field domains and chaos in semiconductor superlattices Bonilla, L.L.
 1996
 40 1-8 p. 161-165
5 p.
 artikel
29 Editorial Board 1996
 40 1-8 p. CO2-
1 p.
 artikel
30 Effect of lateral confinement on excitonic wavefunctions in T-shaped edge quantum wires Someya, T.
 1996
 40 1-8 p. 315-318
4 p.
 artikel
31 Effects of Coulomb interaction in the magneto-capacitance of quantum wires Govorov, A.O.
 1996
 40 1-8 p. 311-314
4 p.
 artikel
32 Efficient green luminescence from a type-II neighboring confinement structure realized in an AlP GaP system Issiki, F.
 1996
 40 1-8 p. 43-46
4 p.
 artikel
33 Elastic strains in GaAs AlAs quantum dots studied by high resolution X-ray diffraction Holy, V
 1996
 40 1-8 p. 373-377
5 p.
 artikel
34 Electric-field-induced exciton transport in coupled quantum well structures Hagn, M
 1996
 40 1-8 p. 429-431
3 p.
 artikel
35 Electron capture in AlGaAs/AlAs/GaAs double-barrier quantum well structures: Tunneling versus intervalley scattering Schneider, H.
 1996
 40 1-8 p. 133-137
5 p.
 artikel
36 Electron scattering from acoustic phonons in quantum dots and other nanostructures Knipp, P.A.
 1996
 40 1-8 p. 343-347
5 p.
 artikel
37 Electron spin-flip Raman scattering in asymmetric quantum wells: Spin orientation Richards, D.
 1996
 40 1-8 p. 127-131
5 p.
 artikel
38 Electro-optic tuning of vacuum Rabi coupling in semiconductor quantum microcavity structures Fisher, T.A
 1996
 40 1-8 p. 493-496
4 p.
 artikel
39 Evolution of GaAs quantum well excitons with excess electron density and magnetic field Shields, A.J.
 1996
 40 1-8 p. 275-280
6 p.
 artikel
40 Excitations of a drifting 2DEG Bhatti, A.S
 1996
 40 1-8 p. 719-723
5 p.
 artikel
41 Exciton diffusion dynamics in SiGe Si quantum wells on a V-groove patterned Si substrate Usami, N
 1996
 40 1-8 p. 733-736
4 p.
 artikel
42 Exciton dynamics and spin-flip in tensile strained quantum wells Pérez, E
 1996
 40 1-8 p. 737-740
4 p.
 artikel
43 Extreme field-induced cyclotron mass variations in coupled double quantum wells Harff, N.E.
 1996
 40 1-8 p. 29-33
5 p.
 artikel
44 Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors Lipsanen, H
 1996
 40 1-8 p. 601-604
4 p.
 artikel
45 Fabrication of quantum wires on GaAs substrates patterned by in situ electron-beam lithography López, M
 1996
 40 1-8 p. 627-631
5 p.
 artikel
46 Fabrication of Si nanostructures by controlled sidewall oxidation Beton, P.H.
 1996
 40 1-8 p. 265-269
5 p.
 artikel
47 Far-infrared-study of shallow etched quantum wires on high mobility GaAs AlGaAs heterostructures and quantum-wells Roßkopf, V.
 1996
 40 1-8 p. 333-337
5 p.
 artikel
48 Fermi-edge singularities in the optical emission of doped direct and indirect quantum wells Rodríguez, F.J.
 1996
 40 1-8 p. 101-103
3 p.
 artikel
49 First demonstration of a planar-type surface tunnel transistor (STT): Lateral interband tunnel device Uemura, T
 1996
 40 1-8 p. 519-522
4 p.
 artikel
50 Formation of Si quantum dots in nanocrystalline silicon Schoenfeld, O
 1996
 40 1-8 p. 605-608
4 p.
 artikel
51 GaAs Al0.3Ga0.7As resonant tunneling diodes with atomically flat interfaces grown on (411)A GaAs substrates by MBE Shimomura, S
 1996
 40 1-8 p. 417-420
4 p.
 artikel
52 Gate-controlled modulation of electronic states and conductance in coupled quantum wells having an in-plane periodic potential Ohno, Y.
 1996
 40 1-8 p. 303-305
3 p.
 artikel
53 Growth and characterization of InSb InP short-period strained-layer superlattices grown by almbe Utzmeier, T
 1996
 40 1-8 p. 621-626
6 p.
 artikel
54 Growth and optical investigation of quaternary GaInAsSb AlGaAsSb quantum wells Shen, S.C.
 1996
 40 1-8 p. 143-147
5 p.
 artikel
55 Growth and properties of HgSe:Fe quantum wells and superlattices Schikora, D.
 1996
 40 1-8 p. 63-67
5 p.
 artikel
56 High conductance in random superlattices with correlated disorder Diez, E
 1996
 40 1-8 p. 433-436
4 p.
 artikel
57 InAs GaAs quantum boxes obtained by self-organized growth: Intrinsic electronic properties and applications Gérard, J.M
 1996
 40 1-8 p. 807-814
8 p.
 artikel
58 Inelastic light scattering from electronic excitations in deep-etched quantum dots and wires Lockwood, D.J.
 1996
 40 1-8 p. 339-342
4 p.
 artikel
59 Influence of spatial doping correlation on scattering times studied in gated and ungated GaAs AlGaAs quantum wells under hydrostatic pressure Brunthaler, G.
 1996
 40 1-8 p. 105-108
4 p.
 artikel
60 Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented InGaAs GaAs heterostructures Guimarães, F.E.G
 1996
 40 1-8 p. 659-663
5 p.
 artikel
61 Infrared absorption in p-type SiGe Si quantum wells: Intersubband transition and free carrier contributions Zanier, S.
 1996
 40 1-8 p. 123-126
4 p.
 artikel
62 Interface and layer thickness dependence of the effective mass in InAs GaSb superlattices studied by high field cyclotron resonance Nicholas, R.J.
 1996
 40 1-8 p. 181-184
4 p.
 artikel
63 Interface electroluminescence of confined carriers in type II broken-gap p- GaInAsSb p-InAs single heterojunction Mikhailova, M.P
 1996
 40 1-8 p. 673-677
5 p.
 artikel
64 Interplay of 2D and 3D charge carriers in Si-δ-doped InSb layers grown epitaxially on GaAs De Keyser, A
 1996
 40 1-8 p. 395-398
4 p.
 artikel
65 Intersubband far-infrared emission and magnetotransport of 2D hole gas in a strong in-plane electric field and transverse magnetic fields Churakov, G.V
 1996
 40 1-8 p. 391-393
3 p.
 artikel
66 Intersubband lifetimes in Si SiGe quantum wells Heiss, W.
 1996
 40 1-8 p. 59-62
4 p.
 artikel
67 Intersubband Raman scattering in InAs AlSb quantum wells Wagner, J.
 1996
 40 1-8 p. 281-285
5 p.
 artikel
68 Investigation of inversion-asymmetry effects on the band structure of Sn1Ge n superlattices Lew Yan Voon, L.C.
 1996
 40 1-8 p. 191-195
5 p.
 artikel
69 Investigation of low power all-optical bistability in an InGaAs-InAlAs superlattice Couturier, J
 1996
 40 1-8 p. 453-457
5 p.
 artikel
70 Lateral electron depletion in focused-ion-beam implanted pseudomorphic heterostructures with In x Ga1−x As channels De Vries, D.K
 1996
 40 1-8 p. 637-640
4 p.
 artikel
71 Level crossing of nanometer sized InAs islands in GaAs Kowalski, B
 1996
 40 1-8 p. 367-371
5 p.
 artikel
72 Light emitting devices using porous silicon and porous silicon carbide Mimura, H
 1996
 40 1-8 p. 501-504
4 p.
 artikel
73 Light-emitting diodes fabricated with conjugated polymers Baigent, D.R
 1996
 40 1-8 p. 477-485
9 p.
 artikel
74 Light-scattering determination of electron tunneling gaps in double quantum wells Plaut, A.S.
 1996
 40 1-8 p. 291-293
3 p.
 artikel
75 Magnetic field effects in the luminescence spectra of type II GaAs AlAs double layer structures Trüby, A.
 1996
 40 1-8 p. 139-141
3 p.
 artikel
76 Magnetooptical investigations of symmetrically strained (GaIn)As Ga(PAs) multiple quantum well structures Volk, M
 1996
 40 1-8 p. 585-589
5 p.
 artikel
77 Magneto-optical properties of self-organized strained InGaAs quantum disks Weman, H
 1996
 40 1-8 p. 379-382
4 p.
 artikel
78 Magneto-optical studies of compressively strained GaInP AlGaInP multiple quantum wells Kinder, D
 1996
 40 1-8 p. 597-600
4 p.
 artikel
79 Magneto-optical studies of semimagnetic superlattices Yakovlev, D.R.
 1996
 40 1-8 p. 35-41
7 p.
 artikel
80 Magneto-optical studies of the type I/type II crossover and band offset in ZnTe Zn1−xMnxTe superlattices in magnetic fields up to 45 T Cheng, H.H.
 1996
 40 1-8 p. 69-74
6 p.
 artikel
81 Magneto-optical transitions in the presence of a two-dimensional hole gas Gravier, L
 1996
 40 1-8 p. 697-699
3 p.
 artikel
82 Magnetotransport of two-dimensional electron gas in Si SiGe modulation doped structures grown by gas source molecular beam epitaxy Matsumura, A
 1996
 40 1-8 p. 399-403
5 p.
 artikel
83 Magneto transport on antidot arrays, fabricated by an atomic force microscope Wendel, M.
 1996
 40 1-8 p. 25-28
4 p.
 artikel
84 Magnetotransport phenomena in single AlGaAs GaAs quantum wires grown on laterally patterned substrates Tornow, M.
 1996
 40 1-8 p. 323-328
6 p.
 artikel
85 Many body effects and charge carrier kinetics studied by electro-optical experiments in type-I hetero n-i-p-i structures with selective contacts Schultz, J
 1996
 40 1-8 p. 683-686
4 p.
 artikel
86 Many body effects in the luminescence of In0.53Ga0.47As InP quantum wires Wang, K.H.
 1996
 40 1-8 p. 287-289
3 p.
 artikel
87 MBE growth of submicron carrier confinement structures on patterned GaAs(111)A substrates using only silicon dopant Fujita, K
 1996
 40 1-8 p. 633-636
4 p.
 artikel
88 Mesoscopic conductance fluctuations in impurity-assisted resonant tunnelling Mcdonnell, P
 1996
 40 1-8 p. 409-412
4 p.
 artikel
89 Metal-insulator transition in Sb-doped short period Si SiGe superlattices Stöger, G.
 1996
 40 1-8 p. 47-51
5 p.
 artikel
90 Microscopic structure of strained InGaAs GaAs heterostructures Proietti, M.G
 1996
 40 1-8 p. 653-658
6 p.
 artikel
91 Modeling effects of focused ion beams Stern, F
 1996
 40 1-8 p. 523-525
3 p.
 artikel
92 Modulation of Fano resonances by an external magnetic field in semiconductor quantum wells Bellani, V.
 1996
 40 1-8 p. 85-88
4 p.
 artikel
93 Nonguiding semiconductor microcavity: Exciton-photon mode splitting and photoluminescence dynamics Bloch, J
 1996
 40 1-8 p. 487-491
5 p.
 artikel
94 Nonlinear optical studies of Bloch oscillations Leisching, P
 1996
 40 1-8 p. 545-549
5 p.
 artikel
95 Non-uniform strain relaxation in In x Ga1−x As layers Alvarez, A.L
 1996
 40 1-8 p. 647-651
5 p.
 artikel
96 Novel cleaved edge overgrowth structures for tunneling into one- and two-dimensional electron systems Grayson, M.
 1996
 40 1-8 p. 233-236
4 p.
 artikel
97 Observation of giant birefringence and dichroism in InP-AlInAs type II superlattices Seidel, W
 1996
 40 1-8 p. 729-732
4 p.
 artikel
98 Optical and electrical characterization of GaN layers grown on silicon and sapphire substrates Sánchez-García, M.A.
 1996
 40 1-8 p. 81-84
4 p.
 artikel
99 Optical investigation of impurity bands in a delta-doped n-layer Schönhut, J
 1996
 40 1-8 p. 701-705
5 p.
 artikel
100 Optically detected impurity D0 and D− transitions in GaAs quantum wells Kono, J.
 1996
 40 1-8 p. 93-96
4 p.
 artikel
101 Optical properties of boron modulation-doped SiGe quantum wells and Si thin films Buyanova, I.A.
 1996
 40 1-8 p. 53-57
5 p.
 artikel
102 Optical studies of acceptor centre doped GaAs AlGaAs quantum wells Ferreira, A.C.
 1996
 40 1-8 p. 89-92
4 p.
 artikel
103 Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing Ledentsov, N.N
 1996
 40 1-8 p. 785-798
14 p.
 artikel
104 Ordering of nanoscale InP islands on strain-modulated InGaP buffer layers Häusler, K
 1996
 40 1-8 p. 803-806
4 p.
 artikel
105 Organising committee, programme committee, international committee and sponsors 1996
 40 1-8 p. xix-
1 p.
 artikel
106 Oscillating electric field domains in GaAs AlAs superlattices Kastrup, J.
 1996
 40 1-8 p. 157-160
4 p.
 artikel
107 Oscillation of the scattering time in a 2D electron system with oval antidots Gusev, G.M
 1996
 40 1-8 p. 441-446
6 p.
 artikel
108 Phonon Raman scattering in quantum wires Rubio, J
 1996
 40 1-8 p. 707-710
4 p.
 artikel
109 Phonons in single thin epitaxial layers of InAs on InP Quagliano, L.G
 1996
 40 1-8 p. 711-714
4 p.
 artikel
110 Photo- and cathodoluminescence of AlGaAs single quantum wires on vicinal GaAs (110) surfaces Nakashima, H.
 1996
 40 1-8 p. 319-322
4 p.
 artikel
111 Photoluminescence enhancement induced by near surface Si doping wires in GaAs Ramsteiner, M.
 1996
 40 1-8 p. 329-332
4 p.
 artikel
112 Photoluminescence from submonolayer Ge embedded in Si(100) Sunamura, H
 1996
 40 1-8 p. 693-696
4 p.
 artikel
113 Photoluminescence quantum yield in GaAs AlAs superlattices Aaviksoo, J
 1996
 40 1-8 p. 687-691
5 p.
 artikel
114 Photon-assisted tunneling in coupled double quantum wells Blanke, G
 1996
 40 1-8 p. 421-424
4 p.
 artikel
115 Plasmon dispersion for a modulated two-dimensional electron gas Richards, D.
 1996
 40 1-8 p. 203-207
5 p.
 artikel
116 Preface Calleja, J.M.
 1996
 40 1-8 p. xvii-
1 p.
 artikel
117 Probing resonant tunneling and charge accumulation via capacitance measurements in [111]-oriented InGaAs GaAs MQW and superlattices Sánchez-Rojas, J.L
 1996
 40 1-8 p. 591-595
5 p.
 artikel
118 Pyramidal quantum dot structures by self-limited selective area metalorganic vapor phase epitaxy Fukui, T
 1996
 40 1-8 p. 799-802
4 p.
 artikel
119 Quantized conductance in a Si Si0.7Ge0.3 split-gate device and impurity-related magnetotransport phenomena Többen, D
 1996
 40 1-8 p. 405-408
4 p.
 artikel
120 Quantum chaotic transport in double barrier tunnel structures Fromhold, T.M.
 1996
 40 1-8 p. 7-14
8 p.
 artikel
121 Quantum functional devices for advanced electronics Yokoyama, N
 1996
 40 1-8 p. 505-511
7 p.
 artikel
122 Raman scattering by plasmons in deep etched quantum wires Dahl, C.
 1996
 40 1-8 p. 261-264
4 p.
 artikel
123 Relaxation and recombination in ultrasmall InAs quantum dots Bogani, F
 1996
 40 1-8 p. 363-366
4 p.
 artikel
124 Residual strain in Si-Si1−x Ge x quantum dots Tang, Y.S
 1996
 40 1-8 p. 383-386
4 p.
 artikel
125 Resonant cavity light emitting diodes for the 3–5 μm range Hadji, E
 1996
 40 1-8 p. 473-476
4 p.
 artikel
126 Resonant magnetotunnelling spectroscopy of a quantum loop Nogaret, A
 1996
 40 1-8 p. 447-451
5 p.
 artikel
127 Resonant tunneling and intrinsic bistability in GaSb-based double barrier heterostructures Jimenez, J.L
 1996
 40 1-8 p. 583-584
2 p.
 artikel
128 Resonant tunneling through rare earth arsenide, semimetal quantum wells Brehmer, D.E.
 1996
 40 1-8 p. 241-244
4 p.
 artikel
129 Second-order resonant Raman scattering in semiconductor quantum wells under high magnetic fields Cros, A
 1996
 40 1-8 p. 715-718
4 p.
 artikel
130 Second-order susceptibilities related to valence-band transitions in asymmetric Si SiGe quantum wells Kruck, P
 1996
 40 1-8 p. 763-766
4 p.
 artikel
131 Self-ordering mechanism of quantum wires grown on nonplanar substrates Kapon, E
 1996
 40 1-8 p. 815-818
4 p.
 artikel
132 Self-organized growth of quantum-dot structures Nötzel, R
 1996
 40 1-8 p. 777-783
7 p.
 artikel
133 Semiconductor microcavity under magnetic field: From the weak coupling to the strong coupling regime Tignon, J
 1996
 40 1-8 p. 497-500
4 p.
 artikel
134 Short period superlattices under hydrostatic pressure Gassot, P.
 1996
 40 1-8 p. 185-189
5 p.
 artikel
135 Single electron charging and single electron tunneling in sub-micron AlGaAs GaAs double barrier transistor structures Austing, D.G.
 1996
 40 1-8 p. 237-240
4 p.
 artikel
136 Single-electron-tunneling spectroscopy of asymmetric laterally confined double-barrier heterostructures Schmidt, T.
 1996
 40 1-8 p. 15-19
5 p.
 artikel
137 Spectroscopic observation of magnetic MnTe submonolayer insertions in II–VI heterostructures Ulmer-Tuffigo, H.
 1996
 40 1-8 p. 75-79
5 p.
 artikel
138 Spin splitting of excitons in GaAs quantum wells at zero magnetic field Muñoz, L
 1996
 40 1-8 p. 755-758
4 p.
 artikel
139 Strain induced self organized growth of lateral periodic strained layer superlattices on off-oriented substrates by metalorganic vapour phase epitaxy Marschner, T
 1996
 40 1-8 p. 819-823
5 p.
 artikel
140 Strain measurement in thin pseudomorphic SiGe layers of submicron wires using Raman spectroscopy Dietrich, B.
 1996
 40 1-8 p. 307-310
4 p.
 artikel
141 Strong magnetic field dependence of laser emission from quantum wires formed by cleaved edge overgrowth Wegscheider, W.
 1996
 40 1-8 p. 1-6
6 p.
 artikel
142 Structural aspects of the growth of InAs islands on InP substrate Ponchet, A
 1996
 40 1-8 p. 615-619
5 p.
 artikel
143 Structural properties of Ga28P13 clusters encapsulated in zeolite Y Porto, J.A
 1996
 40 1-8 p. 771-775
5 p.
 artikel
144 Studies of carrier relaxation in low dimensional structures Sung, C.Y
 1996
 40 1-8 p. 751-754
4 p.
 artikel
145 Sum frequency generation by intersubband transition in step quantum wells Liu, H.C
 1996
 40 1-8 p. 567-570
4 p.
 artikel
146 Surface modifications in strained-layer heteroepitaxy studied by UHV-scanning tunneling microscopy Springholz, G
 1996
 40 1-8 p. 571-577
7 p.
 artikel
147 Synthesis and optical properties of CdS and Ge clusters in zeolite cages Aparisi, A
 1996
 40 1-8 p. 641-645
5 p.
 artikel
148 Temperature studies of the tunnelling between parallel two-dimensional electron gases Turner, N
 1996
 40 1-8 p. 413-415
3 p.
 artikel
149 Temporally correlated transport and suppression of shot noise in a ballistic quantum point contact Reznikov, M
 1996
 40 1-8 p. 513-517
5 p.
 artikel
150 The effect of resonant sublevel coupling on intersubband transitions in coupled double quantum wells Hartung, M.
 1996
 40 1-8 p. 113-115
3 p.
 artikel
151 The effects of photogenerated free carriers and microwave electron heating on exciton dynamics in GaAs AlGaAs quantum wells Ashkinadze, B.M
 1996
 40 1-8 p. 561-565
5 p.
 artikel
152 Time and spatial resolved photoluminescence from a single quantum dot Watabe, H
 1996
 40 1-8 p. 537-540
4 p.
 artikel
153 Time-dependent study of the photoionization of an electron out of a quantum well in an electric field Vinter, B.
 1996
 40 1-8 p. 149-152
4 p.
 artikel
154 Time-resolved exciton dynamics and stimulated emission from ZnCdSe ZnSe multiple quantum well structures Taylor, R.A
 1996
 40 1-8 p. 741-743
3 p.
 artikel
155 Time-resolved optical investigations of bloch oscillations in semiconductor superlattices Dekorsy, T
 1996
 40 1-8 p. 551-554
4 p.
 artikel
156 Time resolved photoinduced intersubband absorption: A novel and powerful way of studying the dynamics of quantum structure carriers Duer, R
 1996
 40 1-8 p. 555-559
5 p.
 artikel
157 Time resolved spectroscopy of single quantum dot structures Bockelmann, U
 1996
 40 1-8 p. 541-544
4 p.
 artikel
158 Transient negative photocurrent and out-of-well dipole kinetics in novel piezoelectric InGaAs GaAs MQW pin diodes Izpura, I
 1996
 40 1-8 p. 463-467
5 p.
 artikel
159 Transparent self-electro-optic effect device based on Wannier-Stark localization in unstrained In x Ga 1−x As In x Al 1−x As superlattices on GaAs substrate Tominaga, K
 1996
 40 1-8 p. 459-462
4 p.
 artikel
160 Transport anomalies in electron billiards with a lack of symmetry Budantsev, M.V.
 1996
 40 1-8 p. 213-215
3 p.
 artikel
161 Tunneling currents in mesoscopic rings Chiappe, G.
 1996
 40 1-8 p. 209-212
4 p.
 artikel
162 Tunneling in double quantum wells with scatterings: A density matrix approach Ferreira, R
 1996
 40 1-8 p. 425-427
3 p.
 artikel
163 Two-dimensional A+ states in boron doped SiGe quantum structures Yassievich, I.N.
 1996
 40 1-8 p. 97-99
3 p.
 artikel
164 Two-dimensional electrons in a magnetic superlattice Carmona, H.A.
 1996
 40 1-8 p. 217-220
4 p.
 artikel
165 Two types of mesoscopic fluctuations in a high magnetic field due to bulk and boundary diffusion Bykov, A.A.
 1996
 40 1-8 p. 353-355
3 p.
 artikel
166 V-grooved quantum wires as prototypes of 1D-systems: Single particle properties and correlation effects Rossi, F.
 1996
 40 1-8 p. 249-255
7 p.
 artikel
167 Visible light emitting Si SiO2 superlattices Lu, Z.H.
 1996
 40 1-8 p. 197-201
5 p.
 artikel
168 Wannier-Stark ladder spectra in InxGa1−xAsGaAs strained layer piezo-electric superlattices Peggs, D.W.
 1996
 40 1-8 p. 167-170
4 p.
 artikel
169 Wannier-Stark oscillations in Zener tunneling currents Nagasawa, H.
 1996
 40 1-8 p. 245-247
3 p.
 artikel
                             169 gevonden resultaten
 
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