| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison of the kink effect in polysilicon thin film transistors and silicon on insulator transistors
|
Armstrong, G.A.
|
|
1996
|
39 |
9 |
p. 1337-1346
10 p.
|
artikel
|
| 2 |
An analytical insulated-gate bipolar transistor (IGBT) model for steady-state and transient applications under all free-carrier injection conditions
|
Yue, Y.
|
|
1996
|
39 |
9 |
p. 1277-1282
6 p.
|
artikel
|
| 3 |
A new analytical model for determination of breakdown voltage of Resurf structures
|
Kriz̆aj, Dejan
|
|
1996
|
39 |
9 |
p. 1353-1358
6 p.
|
artikel
|
| 4 |
A nondestructive method for measuring the photoelectric parameters of wafers with p-n junctions
|
Koshelev, O.G.
|
|
1996
|
39 |
9 |
p. 1379-1383
5 p.
|
artikel
|
| 5 |
A novel UMOS capacitor test structure for SiC devices
|
Zetterling, C.-M.
|
|
1996
|
39 |
9 |
p. 1396-1397
2 p.
|
artikel
|
| 6 |
A relationship between interface trap density and transconductance in 6HSiC enhancement mode field-effect transistors
|
Dryfuse, M.W.
|
|
1996
|
39 |
9 |
p. 1331-1335
5 p.
|
artikel
|
| 7 |
Capacitance-voltage hysteresis of an electrolyte-GaAs Schottky contact associated with field-enhanced trapping of hot electrons
|
Yamashita, Akiyasu
|
|
1996
|
39 |
9 |
p. 1269-1275
7 p.
|
artikel
|
| 8 |
Characteristics of bulk-barrier switching devices with InGaAsGaAs delta-doped quantum wells
|
Guo, Der-Feng
|
|
1996
|
39 |
9 |
p. 1365-1369
5 p.
|
artikel
|
| 9 |
Comparison of different analytical descriptions of the temperature dependence of the indirect energy gap in silicon
|
Pässler, R.
|
|
1996
|
39 |
9 |
p. 1311-1319
9 p.
|
artikel
|
| 10 |
Depletion approximation in semiconductor trap filling analysis: Application to EL2 in GaAs
|
Look, D.C.
|
|
1996
|
39 |
9 |
p. 1398-1400
3 p.
|
artikel
|
| 11 |
Effects of the screening and mirror charges on electron mobility in the subthreshold region of Si MOSFETs
|
Ohkura, Y.
|
|
1996
|
39 |
9 |
p. 1371-1377
7 p.
|
artikel
|
| 12 |
Electrical transport in p-GaN, n-InN and n-InGaN
|
Geerts, Wim
|
|
1996
|
39 |
9 |
p. 1289-1294
6 p.
|
artikel
|
| 13 |
High frequency characteristics and modelling of p-type 6H-silicon carbide MOS structures
|
Fernández, J.
|
|
1996
|
39 |
9 |
p. 1359-1364
6 p.
|
artikel
|
| 14 |
High performance InP InGaAs-BASED MSM photodetector operating at 1.3-1.5 μm
|
Song, K.C.
|
|
1996
|
39 |
9 |
p. 1283-1287
5 p.
|
artikel
|
| 15 |
Methodology of abrupt heterostructures: band diagram calculations
|
Djaloshinski, L.
|
|
1996
|
39 |
9 |
p. 1385-1390
6 p.
|
artikel
|
| 16 |
Mobility modeling of SOI MOSFETs in the high temperature range
|
Reichert, G.
|
|
1996
|
39 |
9 |
p. 1347-1352
6 p.
|
artikel
|
| 17 |
Modeling narrow-channel effect in VLSI mesa-isolated SOI MOS devices using a quasi-two-dimensional approach
|
Su, K.W.
|
|
1996
|
39 |
9 |
p. 1321-1329
9 p.
|
artikel
|
| 18 |
Modeling of a MOSFET's parasitic resistance's narrow width and body bias effects for an IC simulator
|
Kai Chen,
|
|
1996
|
39 |
9 |
p. 1405-1408
4 p.
|
artikel
|
| 19 |
Modeling of saturation transconductance for short-channel MOSFETs
|
Wong, H.
|
|
1996
|
39 |
9 |
p. 1401-1404
4 p.
|
artikel
|
| 20 |
Negative V BE shift due to base dopant outdiffusion in DHBT
|
Borgarino, M.
|
|
1996
|
39 |
9 |
p. 1305-1310
6 p.
|
artikel
|
| 21 |
Radiation hard blocked tunneling band GaAs AlGaAs superlattice long wavelength infrared detectors
|
Wu, C.S.
|
|
1996
|
39 |
9 |
p. 1253-1268
16 p.
|
artikel
|
| 22 |
Separation of d.c. and a.c. competing effect of polysilicon-gate depletion in deep submicron CMOS circuit performance
|
Lin, Wallace W.
|
|
1996
|
39 |
9 |
p. 1391-1393
3 p.
|
artikel
|
| 23 |
Transient substrate current in the SOI-LIGBT
|
Sumida, Hitoshi
|
|
1996
|
39 |
9 |
p. 1299-1303
5 p.
|
artikel
|
| 24 |
Use of the charge pumping technique with a sinusoidal gate waveform
|
Autran, J.L.
|
|
1996
|
39 |
9 |
p. 1394-1395
2 p.
|
artikel
|
| 25 |
VPE grown ZnSe Si PIN-like visible photodiodes
|
Lour, Wen-Shiung
|
|
1996
|
39 |
9 |
p. 1295-1298
4 p.
|
artikel
|
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