| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A 2D simulation study on the d.c. and transient behaviour of a SiGe-base heterojunction bipolar device with an extended germanium profile into the n-epi region with application to an ECL buffer
|
Chen, B.Y.
|
|
1996
|
39 |
6 |
p. 935-939
5 p.
|
artikel
|
| 2 |
A model for the 1/f noise corner frequency of FETs on semi-insulating substrates based on bulk phenomena: Theory and experiments
|
Yan, K.T.
|
|
1996
|
39 |
6 |
p. 857-861
5 p.
|
artikel
|
| 3 |
An appraisal of the one-flux method for treating carrier transport in modern semiconductor devices
|
Vaidyanathan, M.
|
|
1996
|
39 |
6 |
p. 827-832
6 p.
|
artikel
|
| 4 |
An exact current partitioning and its effect on base transit time in double heterojunction bipolar transistors
|
Jahan, M.M.
|
|
1996
|
39 |
6 |
p. 941-948
8 p.
|
artikel
|
| 5 |
Anisotropic excess noise within a-Si:H
|
Craig, B.I.
|
|
1996
|
39 |
6 |
p. 807-812
6 p.
|
artikel
|
| 6 |
A procedure for the determination of the effective mobility in an N-MOSFET in the moderate inversion region
|
Banqueri, J.
|
|
1996
|
39 |
6 |
p. 875-883
9 p.
|
artikel
|
| 7 |
Contactless electroreflectance characterization of three InGaAs quantum wells placed in a GaAs/AlGaAs resonant cavity
|
Moneger, S.
|
|
1996
|
39 |
6 |
p. 871-874
4 p.
|
artikel
|
| 8 |
Cryogenic operation of power junction field effect transistors
|
Singh, R.
|
|
1996
|
39 |
6 |
p. 821-826
6 p.
|
artikel
|
| 9 |
Current instability and burnout of HEMT structures
|
Vashchenko, V.A.
|
|
1996
|
39 |
6 |
p. 851-856
6 p.
|
artikel
|
| 10 |
C-V characterization of MOS capacitors in SOI structures
|
Rustagi, S.C.
|
|
1996
|
39 |
6 |
p. 841-849
9 p.
|
artikel
|
| 11 |
Deep levels in Au-PO x N y H z-(n)InP MIS structures
|
Dang Tran, Quan
|
|
1996
|
39 |
6 |
p. 929-934
6 p.
|
artikel
|
| 12 |
Direct current characterization of depletion-mode 6HSiC MOSFETs from 294 to 723 K
|
Casady, J.B.
|
|
1996
|
39 |
6 |
p. 777-784
8 p.
|
artikel
|
| 13 |
Effect of base parameters on the gate-controlled squeeze of a current-conducting region in pnpn structures
|
Gribnikov, Z.S.
|
|
1996
|
39 |
6 |
p. 915-922
8 p.
|
artikel
|
| 14 |
Effects of the rear interface states and fixed charges on the electrical characteristics of thin film transistors with thin amorphous silicon layers
|
Tai, Ya-Hsiang
|
|
1996
|
39 |
6 |
p. 901-908
8 p.
|
artikel
|
| 15 |
Electromodulation spectroscopy study of symmetry forbidden transitions in an In x Ga 1−x As GaAs single quantum well grown using a tertiarybutylarsine source
|
Kuan, H.
|
|
1996
|
39 |
6 |
p. 885-890
6 p.
|
artikel
|
| 16 |
Electron and proton irradiation-induced degradation of epitaxial InP solar cells
|
Walters, R.J.
|
|
1996
|
39 |
6 |
p. 797-805
9 p.
|
artikel
|
| 17 |
Evidence for non-equilibrium base transport in Si and SiGe bipolar transistors at cryogenic temperatures
|
Richey, D.M.
|
|
1996
|
39 |
6 |
p. 785-789
5 p.
|
artikel
|
| 18 |
Finding the asymmetric parasitic source and drain resistances from the a.c. conductances of a single MOS transistor
|
Raychaudhuri, A.
|
|
1996
|
39 |
6 |
p. 909-913
5 p.
|
artikel
|
| 19 |
Minority carrier behavior in silicon—Measurement results derived from the Shockley-Haynes experiment
|
Krüger, B.
|
|
1996
|
39 |
6 |
p. 897-900
4 p.
|
artikel
|
| 20 |
MOS-gated optically triggered thyristor: A new galvanically insulated high voltage integrated switch
|
Berriane, R.
|
|
1996
|
39 |
6 |
p. 863-869
7 p.
|
artikel
|
| 21 |
Optimization study of halo doped MOSFETs
|
Song, Duheon
|
|
1996
|
39 |
6 |
p. 923-927
5 p.
|
artikel
|
| 22 |
Pb/p-PbSe junction: An investigation of current-voltage and capacitance-voltage measurements
|
Dos Santos, O.
|
|
1996
|
39 |
6 |
p. 813-819
7 p.
|
artikel
|
| 23 |
Simulation and analysis of a high-frequency resonant tunneling diode oscillator
|
Liou, Wan-Rone
|
|
1996
|
39 |
6 |
p. 833-839
7 p.
|
artikel
|
| 24 |
Study of InGaAs/GaAs metal-insulator-semiconductor-like heterostructure field-effect transistor
|
Wu, Cheng-Zu
|
|
1996
|
39 |
6 |
p. 791-795
5 p.
|
artikel
|
| 25 |
Temperature dependence of the emitter switched thyristor characteristics
|
Shekar, M.S.
|
|
1996
|
39 |
6 |
p. 769-776
8 p.
|
artikel
|
| 26 |
The Shockley-Haynes experiment applied to MOS structures
|
Krüger, B.
|
|
1996
|
39 |
6 |
p. 891-896
6 p.
|
artikel
|
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