| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate modelling of the accumulation region of a double barrier resonant tunnelling diode
|
Hendriks, A.M.P.J
|
|
1996
|
39 |
5 |
p. 703-712
10 p.
|
artikel
|
| 2 |
A 3D analytical model for threshold voltage of small-geometry MOSFET
|
Noor, Arti
|
|
1996
|
39 |
5 |
p. 745-751
7 p.
|
artikel
|
| 3 |
A finite number of sub-bands?
|
Price, Peter J
|
|
1996
|
39 |
5 |
p. 653-654
2 p.
|
artikel
|
| 4 |
A novel two-step etching process for reducing plasma-induced oxide damage
|
You, Kuo-Feng
|
|
1996
|
39 |
5 |
p. 689-693
5 p.
|
artikel
|
| 5 |
Comments on “Ehrenfest derivation of the mean forces acting in materials with nonuniform band structure: A canonical approach”
|
Le Coz, Y.L
|
|
1996
|
39 |
5 |
p. 767-768
2 p.
|
artikel
|
| 6 |
Compact non-local modeling of impact ionization in SOI MOSFETs for optimal CMOS device/circuit design
|
Krishnan, S
|
|
1996
|
39 |
5 |
p. 661-668
8 p.
|
artikel
|
| 7 |
Computer aided optimization of ion implantation impurity profiles for n + npp + double drift IMPATT diodes with three moment approach
|
Panda, A.K
|
|
1996
|
39 |
5 |
p. 759-762
4 p.
|
artikel
|
| 8 |
Correlation of the decay of tunneling currents with trap generation inside thin oxides
|
Dumin, N.A
|
|
1996
|
39 |
5 |
p. 655-660
6 p.
|
artikel
|
| 9 |
Determination of LDD MOSFET drain resistance from device simulation
|
Samudra, G.S
|
|
1996
|
39 |
5 |
p. 753-758
6 p.
|
artikel
|
| 10 |
Effect of Ge incorporation on the performance of p-channel polycrystalline Si1−x Ge x thin-film transistors
|
Lin, H.C
|
|
1996
|
39 |
5 |
p. 645-651
7 p.
|
artikel
|
| 11 |
Electron cyclotron resonance plasma etching of InP and related materials in BCl3
|
Ren, F
|
|
1996
|
39 |
5 |
p. 695-698
4 p.
|
artikel
|
| 12 |
Finite element Monte Carlo simulation of recess gate compound FFTs
|
Babiker, S
|
|
1996
|
39 |
5 |
p. 629-635
7 p.
|
artikel
|
| 13 |
High barrier metallic polymer/p-type silicon Schottky diodes
|
Onganer, Y
|
|
1996
|
39 |
5 |
p. 677-680
4 p.
|
artikel
|
| 14 |
Modeling of anomalous current-voltage characteristics in floating body fully depleted SOI nMOSFETs
|
Yang, Ping-Chang
|
|
1996
|
39 |
5 |
p. 713-720
8 p.
|
artikel
|
| 15 |
New complementary BiCMOS digital gates for low-voltage environments
|
Rofail, S.S
|
|
1996
|
39 |
5 |
p. 681-687
7 p.
|
artikel
|
| 16 |
Non-equilibrium carrier transport in the base of heterojunction bipolar transistors
|
Özaydin, Melih
|
|
1996
|
39 |
5 |
p. 731-735
5 p.
|
artikel
|
| 17 |
Passivation of carbon doping in InGaAs during ECR-CVD of SiN x
|
Ren, F
|
|
1996
|
39 |
5 |
p. 763-765
3 p.
|
artikel
|
| 18 |
Space charge analysis of Si n +-i structures with application to far-infrared detectors
|
Yuan, H.X
|
|
1996
|
39 |
5 |
p. 621-628
8 p.
|
artikel
|
| 19 |
Study of Fowler-Nordheim tunneling current from polysilicon asperity surface into oxide based on accurate formulation utilizing the charge simulation method
|
Tanaka, Sumio
|
|
1996
|
39 |
5 |
p. 669-675
7 p.
|
artikel
|
| 20 |
Temperature effects on MOSFET driving capability and voltage gain
|
Chen, K
|
|
1996
|
39 |
5 |
p. 699-701
3 p.
|
artikel
|
| 21 |
The Child-Langmuir law as a model for electron transport in semiconductors
|
Ben Abdallah, Naoufel
|
|
1996
|
39 |
5 |
p. 737-744
8 p.
|
artikel
|
| 22 |
The conduction properties of the silicon/off-stoichiometry-SiO2 diode
|
Aceves, M
|
|
1996
|
39 |
5 |
p. 637-644
8 p.
|
artikel
|
| 23 |
Unified physical I-V model of fully depleted SOI/MOSFETs for analog/digital circuit simulation
|
Cheng, Yuhua
|
|
1996
|
39 |
5 |
p. 721-730
10 p.
|
artikel
|
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