| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advanced manufacturing of SIMOX for low power electronics
|
Alles, Michael
|
|
1996
|
39 |
4 |
p. 499-504
6 p.
|
artikel
|
| 2 |
Advanced materials for low power electronics
|
Vasudev, P.K.
|
|
1996
|
39 |
4 |
p. 489-497
9 p.
|
artikel
|
| 3 |
Analysis of quantum wire high electron mobility transistor (HEMT) structure
|
Islam, S.K.
|
|
1996
|
39 |
4 |
p. 615-620
6 p.
|
artikel
|
| 4 |
Analytical study of the contribution of fast and slow oxide traps to the charge pumping current in MOS structures
|
Bauza, D.
|
|
1996
|
39 |
4 |
p. 563-570
8 p.
|
artikel
|
| 5 |
A resurfed high-voltage NMOS device fully compatible with a low-voltage 0.8 μm BiCMOS technology
|
Li, Yong Qiang
|
|
1996
|
39 |
4 |
p. 571-576
6 p.
|
artikel
|
| 6 |
Barrier characteristics of PtSi p-Si Schottky diodes as determined from I-V-T measurements
|
McCafferty, P.G.
|
|
1996
|
39 |
4 |
p. 583-592
10 p.
|
artikel
|
| 7 |
CMOS device and interconnect technology enhancements for low power/low voltage applications
|
Vasudev, P.K.
|
|
1996
|
39 |
4 |
p. 481-488
8 p.
|
artikel
|
| 8 |
Complementary heterostructure FET technology for low power, high speed digital applications
|
Fulkerson, David E.
|
|
1996
|
39 |
4 |
p. 461-469
9 p.
|
artikel
|
| 9 |
Conformal mapping techniques for the analytical, two-dimensional calculation of currents in lateral bipolar transistor structures
|
Freund, D.
|
|
1996
|
39 |
4 |
p. 529-540
12 p.
|
artikel
|
| 10 |
Depletion layer resistance and its effect on I-V characteristics of fully- and partially-illuminated silicon solar cells
|
Chakrabarty, K.
|
|
1996
|
39 |
4 |
p. 577-581
5 p.
|
artikel
|
| 11 |
Extraction of lateral device parameters and channel doping profile of vertical double-diffused MOS transistors
|
Kim, Jongoh
|
|
1996
|
39 |
4 |
p. 541-546
6 p.
|
artikel
|
| 12 |
Foreword
|
Jalali, Bahram
|
|
1996
|
39 |
4 |
p. 423-
1 p.
|
artikel
|
| 13 |
GaAs surface chemical passivation by (NH4)2S+Se and the effect of annealing treatments
|
Belkouch, S.
|
|
1996
|
39 |
4 |
p. 507-510
4 p.
|
artikel
|
| 14 |
125–145 GHz stable depletion layer transferred electron oscillators
|
Zybura, M.F.
|
|
1996
|
39 |
4 |
p. 547-553
7 p.
|
artikel
|
| 15 |
Low-current operation of high-speed InP/InGaAs heterojunction bipolar transistors
|
Nakajima, Hiroki
|
|
1996
|
39 |
4 |
p. 439-444
6 p.
|
artikel
|
| 16 |
Modelling and application of fully depleted SOI MOSFETs for low voltage, low power analogue CMOS circuits
|
Flandre, D.
|
|
1996
|
39 |
4 |
p. 455-460
6 p.
|
artikel
|
| 17 |
Monte Carlo simulation of real and reciprocal space transfer of electrons in a pseudomorphically strained GaAs/In0.15Ga0.85As/GaAs quantum well
|
Hoare, D.
|
|
1996
|
39 |
4 |
p. 601-610
10 p.
|
artikel
|
| 18 |
Noise and gain comparison of 0.25 μm gate MESFETs and PHEMTs for low power wireless communication circuits
|
Scherrer, D.
|
|
1996
|
39 |
4 |
p. 431-437
7 p.
|
artikel
|
| 19 |
Numerical modelling of abrupt InP/InGaAs HBTs
|
López-González, Juan M.
|
|
1996
|
39 |
4 |
p. 523-527
5 p.
|
artikel
|
| 20 |
On the lower bounds of CMOS supply voltage
|
Schrom, Gerhard
|
|
1996
|
39 |
4 |
p. 425-430
6 p.
|
artikel
|
| 21 |
Optimization of PP − junction termination for new power devices
|
Austin, P.
|
|
1996
|
39 |
4 |
p. 593-599
7 p.
|
artikel
|
| 22 |
Physical models of ohmic contact for Monte Carlo device simulation
|
González, Tomás
|
|
1996
|
39 |
4 |
p. 555-562
8 p.
|
artikel
|
| 23 |
Process control of rapid thermal N2O-annealed thin gate oxides
|
Huang, Yi-Zen
|
|
1996
|
39 |
4 |
p. 517-521
5 p.
|
artikel
|
| 24 |
Scaling behavior of sub-micron MOSFETs on fully depleted SOI
|
Kistler, Neal
|
|
1996
|
39 |
4 |
p. 445-454
10 p.
|
artikel
|
| 25 |
Si/SiGe HBTs for application in low power ICs
|
Behammer, D.
|
|
1996
|
39 |
4 |
p. 471-480
10 p.
|
artikel
|
| 26 |
Substrate crosstalk in BiCMOS mixed mode integrated circuits
|
Joardar, Kuntal
|
|
1996
|
39 |
4 |
p. 511-516
6 p.
|
artikel
|
| 27 |
Surface thermoplasma waves and their interaction with flow of charged particles at a semiconductor-metal interface
|
Falko, V.L.
|
|
1996
|
39 |
4 |
p. 611-614
4 p.
|
artikel
|
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