| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A design strategy for short gate length SOI MESFETs
|
Hou, Chin-Shan
|
|
1996
|
39 |
3 |
p. 361-367
7 p.
|
artikel
|
| 2 |
A new method for MIS/IL silicon solar cell simulation
|
Ding, Koubao
|
|
1996
|
39 |
3 |
p. 411-414
4 p.
|
artikel
|
| 3 |
An improved method for extracting the difference between drain and source resistances in MOSFETs
|
Ortiz-Conde, A
|
|
1996
|
39 |
3 |
p. 419-421
3 p.
|
artikel
|
| 4 |
An instrumental solution to the phenomenon of negative capacitances in semiconductors
|
Butcher, K.S.A
|
|
1996
|
39 |
3 |
p. 333-336
4 p.
|
artikel
|
| 5 |
Bias and temperature dependencies of base and collector leakage currents of AlGaAs GaAs heterojunction bipolar transistors
|
Liou, J.J
|
|
1996
|
39 |
3 |
p. 415-418
4 p.
|
artikel
|
| 6 |
Characteristics of camel-gate structures with active doping channel profiles
|
Tsai, Jung-Hui
|
|
1996
|
39 |
3 |
p. 343-347
5 p.
|
artikel
|
| 7 |
Conduction mechanism of oxide-nitride-oxide film formed on the rough polycrystalline silicon surface
|
Matsuo, Naoto
|
|
1996
|
39 |
3 |
p. 337-342
6 p.
|
artikel
|
| 8 |
Electroluminescence analysis of the structural damage created in SiO2 Si systems by Ar ion implantation
|
Bota, S
|
|
1996
|
39 |
3 |
p. 355-359
5 p.
|
artikel
|
| 9 |
Extended thermionic emission-diffusion theory of charge transport through a Schottky diode
|
Racko, Juraj
|
|
1996
|
39 |
3 |
p. 391-397
7 p.
|
artikel
|
| 10 |
Hole capture cross section and emission coefficient of defect centers related to high-field-induced positive charges in SiO2 layers
|
Gao, Xiaoping
|
|
1996
|
39 |
3 |
p. 399-403
5 p.
|
artikel
|
| 11 |
Interpretation of experimentally observed C-t responses for copper contaminated devices
|
Lee, Lichyn
|
|
1996
|
39 |
3 |
p. 369-375
7 p.
|
artikel
|
| 12 |
Modelling of trap-assisted electronic conduction in thin thermally nitrided oxide films
|
Yang, B.L
|
|
1996
|
39 |
3 |
p. 385-390
6 p.
|
artikel
|
| 13 |
Negative stress-induced current in oxidized nitride layers of different nitride thicknesses (<5 nm)
|
Kabir Mazumder, Motaharul
|
|
1996
|
39 |
3 |
p. 349-353
5 p.
|
artikel
|
| 14 |
Ohmic contacts to n-type and p-type GaSb
|
Subekti, A
|
|
1996
|
39 |
3 |
p. 329-332
4 p.
|
artikel
|
| 15 |
Theoretical investigation of planar junction termination
|
Drabe, T
|
|
1996
|
39 |
3 |
p. 323-328
6 p.
|
artikel
|
| 16 |
Thermionic diffusion model for abrupt HBTs including self-heating inside the multilayer nonplanar device structure
|
Schneider, Jürgen
|
|
1996
|
39 |
3 |
p. 377-384
8 p.
|
artikel
|
| 17 |
Time dependent hot-carrier induced interface state generation in deep submicron LDD nMOSFETs
|
Kim, Shi-Ho
|
|
1996
|
39 |
3 |
p. 405-410
6 p.
|
artikel
|
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