| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical approximation to the capacitance of the microstrip disk capacitor
|
Donolato, C.
|
|
1996
|
39 |
2 |
p. 314-317
4 p.
|
artikel
|
| 2 |
A new approach to the determination of gate length and other parameters of GaAs MESFETs and MODFETs
|
Kokorev, Michail F.
|
|
1996
|
39 |
2 |
p. 297-302
6 p.
|
artikel
|
| 3 |
A new process for simultaneous fabrication of a buried and a surface oxide layer
|
Hinrichs, G.
|
|
1996
|
39 |
2 |
p. 231-235
5 p.
|
artikel
|
| 4 |
A semi-empirical model for the tunnel current-voltage characteristics in Al-SiO2-Si(p) structures
|
Faigón, A.
|
|
1996
|
39 |
2 |
p. 251-260
10 p.
|
artikel
|
| 5 |
Auger-free SiSiGe quantum well structures for infra-red detection at 10 μm
|
Corbin, E.
|
|
1996
|
39 |
2 |
p. 237-241
5 p.
|
artikel
|
| 6 |
Bias and thickness dependence of the infra-red PtSi p-Si Schottky diode studied by internal photoemission
|
Chin, V.W.L.
|
|
1996
|
39 |
2 |
p. 277-280
4 p.
|
artikel
|
| 7 |
Determination of physical mechanisms contributing to the difference between drain and source resistances in short-channel MOSFETs
|
Ortiz-Conde, A.
|
|
1996
|
39 |
2 |
p. 211-215
5 p.
|
artikel
|
| 8 |
Dual-carrier transport model of SPRITE detectors
|
Effenberger, Frank J.
|
|
1996
|
39 |
2 |
p. 217-223
7 p.
|
artikel
|
| 9 |
Effects of incomplete ionization of impurity dopants on the performance of bipolar junction transistors
|
Yue, Yun
|
|
1996
|
39 |
2 |
p. 318-320
3 p.
|
artikel
|
| 10 |
Effects of surface potential fluctuations on DLTS of MOS structure
|
Özder, Serhat
|
|
1996
|
39 |
2 |
p. 243-249
7 p.
|
artikel
|
| 11 |
1 f noise and electromigration in multilayered via structures
|
Çelik-Butler, Z.
|
|
1996
|
39 |
2 |
p. 281-286
6 p.
|
artikel
|
| 12 |
Gate resistance determination for HEMTs with MIS-type Schottky contact
|
Zhu, Yu
|
|
1996
|
39 |
2 |
p. 303-304
2 p.
|
artikel
|
| 13 |
Growth and fabrication of GaNInGaN microdisk laser structures
|
Abernathy, C.R.
|
|
1996
|
39 |
2 |
p. 311-313
3 p.
|
artikel
|
| 14 |
High gain p-n-p gated lateral bipolar action in a fully depleted counter-type channel p-MOSFET structure
|
Ho, Jih-Shin
|
|
1996
|
39 |
2 |
p. 261-267
7 p.
|
artikel
|
| 15 |
Improved p-channel InAlAs GaAsSb higfet using Ti/Pt/Au ohmic contacts to beryllium implanted GaAsSb
|
Merkel, K.G.
|
|
1996
|
39 |
2 |
p. 179-191
13 p.
|
artikel
|
| 16 |
Non-exponential capacitance transient in deep level transient spectroscopy (DLTS) measurements
|
Shaban, E.H.
|
|
1996
|
39 |
2 |
p. 321-322
2 p.
|
artikel
|
| 17 |
On space-charge recombination in pn junctions
|
Choo, S.C.
|
|
1996
|
39 |
2 |
p. 308-310
3 p.
|
artikel
|
| 18 |
Stability and noise of PdGeAgAu ohmic contacts to InGaAsInAlAs high electron mobility transistors
|
Tardy, J.
|
|
1996
|
39 |
2 |
p. 225-229
5 p.
|
artikel
|
| 19 |
Static and dynamic hysteresis in deep-impurity doped n-GaAs under d.c. bias voltage
|
Shiau, Yuo-Hsien
|
|
1996
|
39 |
2 |
p. 205-210
6 p.
|
artikel
|
| 20 |
The effect of barrier structure on the performance of double barrier quantum well infra-red photodetectors
|
Tsai, K.L.
|
|
1996
|
39 |
2 |
p. 201-204
4 p.
|
artikel
|
| 21 |
The effect of substrate bias in bulk and SOI SiGe-channel p-MOSFETs
|
Niu, Guo-Fu
|
|
1996
|
39 |
2 |
p. 305-307
3 p.
|
artikel
|
| 22 |
The measurement and analysis of 1 f noise in GaAsFETs
|
Abdala, M.A.
|
|
1996
|
39 |
2 |
p. 287-295
9 p.
|
artikel
|
| 23 |
Transient analysis of CML inverter using Monte Carlo simulations
|
Galdin, Sylvie
|
|
1996
|
39 |
2 |
p. 269-275
7 p.
|
artikel
|
| 24 |
Two-dimensional numerical analysis of AlGaAs GaAs heterojunction bipolar transistors including the effects of graded layer, setback layer and self-heating
|
Kager, A.
|
|
1996
|
39 |
2 |
p. 193-199
7 p.
|
artikel
|
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