| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AlGaAs GaAs HBTs with buried SiO2 in the extrinsic collector
|
Mochizuki, K
|
|
1995
|
38 |
9 |
p. 1619-1622
4 p.
|
artikel
|
| 2 |
A novel passivation technology of InGaAs surfaces using Si interface control layer and its application to field effect transistor
|
Suzuki, S
|
|
1995
|
38 |
9 |
p. 1679-1683
5 p.
|
artikel
|
| 3 |
Applications of HBTs
|
Honjo, K
|
|
1995
|
38 |
9 |
p. 1569-1573
5 p.
|
artikel
|
| 4 |
A 48.1 ps HEMT DCFL NAND circuit with a dual gate structure
|
Suehiro, H
|
|
1995
|
38 |
9 |
p. 1717-1721
5 p.
|
artikel
|
| 5 |
Author index
|
|
|
1995
|
38 |
9 |
p. II-
1 p.
|
artikel
|
| 6 |
Circuit demonstrations in a GaAs BiFET technology
|
Zampardi, P.J
|
|
1995
|
38 |
9 |
p. 1723-1726
4 p.
|
artikel
|
| 7 |
Committees
|
|
|
1995
|
38 |
9 |
p. viii-
1 p.
|
artikel
|
| 8 |
Development of HBT structure to minimize parasitic elements
|
Asbeck, Peter
|
|
1995
|
38 |
9 |
p. 1691-1695
5 p.
|
artikel
|
| 9 |
Fabrication of 0.2 μm gate pseudomorphic inverted HEMT by phase-shifting technology
|
Yamada, H.T
|
|
1995
|
38 |
9 |
p. 1631-1634
4 p.
|
artikel
|
| 10 |
Failure mechanisms in AlGaAs GaAs HEMTs
|
Christianson, K.A
|
|
1995
|
38 |
9 |
p. 1623-1626
4 p.
|
artikel
|
| 11 |
High gain, pulsed power AlGaAs GaAs HBTs
|
Jackson, G
|
|
1995
|
38 |
9 |
p. 1641-1644
4 p.
|
artikel
|
| 12 |
Improvements of drain current characteristics of InAs field-effect transistors by the surface reaction of platinum gate
|
Yoh, Kanji
|
|
1995
|
38 |
9 |
p. 1611-1614
4 p.
|
artikel
|
| 13 |
InGaP GaAs and InP InGaAs heterojunction bipolar transistors with a super heavily carbon-doped base grown by metalorganic molecular beam epitaxy
|
Shirakashi, Jun-Ichi
|
|
1995
|
38 |
9 |
p. 1675-1678
4 p.
|
artikel
|
| 14 |
InP InGaAs double-heterostructure bipolar transistors for high-speed ICs and OEICs
|
Matsuoka, Yutaka
|
|
1995
|
38 |
9 |
p. 1703-1709
7 p.
|
artikel
|
| 15 |
Junction heterostructures for high performance electronics
|
Shealy, J.B
|
|
1995
|
38 |
9 |
p. 1607-1610
4 p.
|
artikel
|
| 16 |
Keyword index
|
|
|
1995
|
38 |
9 |
p. I-
1 p.
|
artikel
|
| 17 |
Material and device properties of MOCVD grown InAlAs InGaAs HEMTs
|
Pavlidis, D
|
|
1995
|
38 |
9 |
p. 1697-1701
5 p.
|
artikel
|
| 18 |
Microwave components for cellular portable radiotelephone
|
Muraguchi, Masahiro
|
|
1995
|
38 |
9 |
p. 1551-1557
7 p.
|
artikel
|
| 19 |
Military applications for heterostructure microelectronics technology
|
Greiling, Paul
|
|
1995
|
38 |
9 |
p. 1559-1567
9 p.
|
artikel
|
| 20 |
Millimeter wave heterojunction FET monolithic integrated circuits for compact communication systems
|
Ohata, Keiichi
|
|
1995
|
38 |
9 |
p. 1589-1594
6 p.
|
artikel
|
| 21 |
Millimeter wave InP HEMT technology: Performance and applications
|
Nguyen, Loi D
|
|
1995
|
38 |
9 |
p. 1575-1579
5 p.
|
artikel
|
| 22 |
Modern epitaxial techniques for HBT structures
|
Alexandre, F
|
|
1995
|
38 |
9 |
p. 1667-1674
8 p.
|
artikel
|
| 23 |
Multivalued logic applications of heterostructure devices and circuitry
|
Micheel, Lutz J
|
|
1995
|
38 |
9 |
p. 1603-1606
4 p.
|
artikel
|
| 24 |
Novel fabrication of self-aligned GaAs AlGaAs and GaAs InGaP microwave power heterojunction bipolar transistors
|
Ren, F
|
|
1995
|
38 |
9 |
p. 1635-1639
5 p.
|
artikel
|
| 25 |
Novel heterodimensional diodes and transistors
|
Shur, M.S
|
|
1995
|
38 |
9 |
p. 1727-1730
4 p.
|
artikel
|
| 26 |
Open-base multi-emitter HBTs with increased logic functions
|
Imamura, K
|
|
1995
|
38 |
9 |
p. 1711-1715
5 p.
|
artikel
|
| 27 |
Optimization of the HBT and bump configuration for bump heat sink structure and application to HBT power MMICs
|
Sato, H
|
|
1995
|
38 |
9 |
p. 1653-1656
4 p.
|
artikel
|
| 28 |
Overview of recent development of HEMTs in the mm-wave range
|
Takamiya, Saburo
|
|
1995
|
38 |
9 |
p. 1581-1588
8 p.
|
artikel
|
| 29 |
Performance of double heterostructure unipolar transistors in high frequency power applications
|
Ingram, S.G
|
|
1995
|
38 |
9 |
p. 1663-1665
3 p.
|
artikel
|
| 30 |
Photoelectric emission and conductance studies on fully fabricated PHEMTs
|
Schuermeyer, Fritz
|
|
1995
|
38 |
9 |
p. 1615-1618
4 p.
|
artikel
|
| 31 |
Preface
|
|
|
1995
|
38 |
9 |
p. vii-
1 p.
|
artikel
|
| 32 |
SiGe HBTs and HFETs
|
König, U
|
|
1995
|
38 |
9 |
p. 1595-1602
8 p.
|
artikel
|
| 33 |
Si SiGe CMOS possibilities
|
Sadek, A
|
|
1995
|
38 |
9 |
p. 1731-1734
4 p.
|
artikel
|
| 34 |
Study on d.c. bias mode for common emitter HBT
|
Komaru, M
|
|
1995
|
38 |
9 |
p. 1649-1651
3 p.
|
artikel
|
| 35 |
Surface electrical breakdown characteristics of molecular beam epitaxial layers grown at low temperatures
|
Shiobara, S
|
|
1995
|
38 |
9 |
p. 1685-1690
6 p.
|
artikel
|
| 36 |
Surface related degradation of InP-based HEMTs during thermal stress
|
Ashizawa, Y
|
|
1995
|
38 |
9 |
p. 1627-1630
4 p.
|
artikel
|
| 37 |
Thermal-avalanche interacting behaviour of AlGaAs GaAs multi-emitter finger heterojunction bipolar transistors
|
Liou, J.J
|
|
1995
|
38 |
9 |
p. 1645-1648
4 p.
|
artikel
|
| 38 |
Thermal stabilization of AlGaAs GaAs power HBTs using n-Al x Ga1−xAs emitter ballast resistors with high thermal coefficient of resistance
|
Twynam, J.K
|
|
1995
|
38 |
9 |
p. 1657-1661
5 p.
|
artikel
|
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