| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A method for predicting breakdown voltage of power devices with cylindrical diffused junctions
|
Chai, Francis K
|
|
1995
|
38 |
8 |
p. 1547-1549
3 p.
|
artikel
|
| 2 |
A model for the dependence of maximum oscillation frequency on collector to substrate capacitance in bipolar transistors
|
Armstrong, G.A
|
|
1995
|
38 |
8 |
p. 1505-1510
6 p.
|
artikel
|
| 3 |
Analysis of the high injection effects in silicon bipolar transistors at low temperatures
|
Zhixiong, Xiao
|
|
1995
|
38 |
8 |
p. 1455-1460
6 p.
|
artikel
|
| 4 |
An analytical expression for the current in short-base transistors
|
Denis, A.St
|
|
1995
|
38 |
8 |
p. 1431-1436
6 p.
|
artikel
|
| 5 |
An analytical model of the V BE-dependence of current-splitting in CMOS-compatible lateral bipolar transistors
|
Freund, Dirk
|
|
1995
|
38 |
8 |
p. 1543-1546
4 p.
|
artikel
|
| 6 |
Application of the MOS charge-sheet model to nonuniform doping along the channel
|
Victory, James
|
|
1995
|
38 |
8 |
p. 1497-1503
7 p.
|
artikel
|
| 7 |
Computationally efficient version of the Pao-Sah model with variable mobility
|
Persi, M
|
|
1995
|
38 |
8 |
p. 1461-1463
3 p.
|
artikel
|
| 8 |
Computation of current and transconductance of a nonuniformly doped channel MOSFET with an arbitrary doping profile
|
Wang, Chong-Lung
|
|
1995
|
38 |
8 |
p. 1423-1429
7 p.
|
artikel
|
| 9 |
Conduction behaviour of low-temperature (≤600°C) polysilicon TFTs with an in situ drain doping level
|
Pichon, L
|
|
1995
|
38 |
8 |
p. 1515-1521
7 p.
|
artikel
|
| 10 |
Determination of contact resistivity by a modified Cox and Strack method in case of finite metal sheet resistance
|
Ahmad, M
|
|
1995
|
38 |
8 |
p. 1437-1440
4 p.
|
artikel
|
| 11 |
Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures
|
Depas, M
|
|
1995
|
38 |
8 |
p. 1465-1471
7 p.
|
artikel
|
| 12 |
Deterministic MOSFET simulation using a generalized spherical harmonic expansion of the Boltzmann equation
|
Hennacy, K.A
|
|
1995
|
38 |
8 |
p. 1485-1495
11 p.
|
artikel
|
| 13 |
Double-sweep LF-CV technique for generation rate determination in MOS capacitors
|
Sorge, Roland
|
|
1995
|
38 |
8 |
p. 1479-1484
6 p.
|
artikel
|
| 14 |
Evidence of optical generation-recombination noise
|
Jang, Sheng-Lyang
|
|
1995
|
38 |
8 |
p. 1449-1453
5 p.
|
artikel
|
| 15 |
Luminescence polarization and spin-relaxation in GaAs grown on Si and on InP
|
Bacquet, G
|
|
1995
|
38 |
8 |
p. 1523-1527
5 p.
|
artikel
|
| 16 |
MESFET performance and limitations of optimized GaAs strained buffer layer grown on InP by molecular beam epitaxy
|
Lee, C.T
|
|
1995
|
38 |
8 |
p. 1529-1531
3 p.
|
artikel
|
| 17 |
Numerical analysis of the extraction of barrier height and Richardson constant of Schottky contacts on AlGaAs/GaAs heterostructures
|
Menozzi, Roberto
|
|
1995
|
38 |
8 |
p. 1511-1514
4 p.
|
artikel
|
| 18 |
Photovoltaic properties and high efficiency of preferentially doped polysilicon solar cells
|
Ben Arab, Adel
|
|
1995
|
38 |
8 |
p. 1441-1447
7 p.
|
artikel
|
| 19 |
Silicon Auger transistor—New insight into the performance of a tunnel MIS emitter transistor
|
Grekhov, I.V
|
|
1995
|
38 |
8 |
p. 1533-1542
10 p.
|
artikel
|
| 20 |
The effects of rapid thermal processing on ultra-shallow junctions for deep sub-micron MOSFETs
|
Liu, R
|
|
1995
|
38 |
8 |
p. 1473-1477
5 p.
|
artikel
|
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