| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison of alane precursors for growth of AlAs and AlGaAs by metalorganic molecular beam epitaxy
|
Abernathy, C.R.
|
|
1995
|
38 |
3 |
p. 737-738
2 p.
|
artikel
|
| 2 |
Analysis and modeling of self-heating effects in thin-film SOI MOSFETs as a function of temperature
|
Jomaah, J.
|
|
1995
|
38 |
3 |
p. 615-618
4 p.
|
artikel
|
| 3 |
A new technique for the determination of barrier height of Schottky barrier diodes
|
Chattopadhyay, P.
|
|
1995
|
38 |
3 |
p. 739-741
3 p.
|
artikel
|
| 4 |
A simple method for determining capacitive coupling coefficients in floating-gate devices
|
Choi, Woong L.
|
|
1995
|
38 |
3 |
p. 581-586
6 p.
|
artikel
|
| 5 |
Combined effects of graded and setback layers on the AlGaAs GaAs HBT current-voltage characteristics
|
Ho, C.S.
|
|
1995
|
38 |
3 |
p. 627-632
6 p.
|
artikel
|
| 6 |
Cryogenic operation of asymmetric n-channel IGBTs
|
Singh, Ranbir
|
|
1995
|
38 |
3 |
p. 561-566
6 p.
|
artikel
|
| 7 |
Design of novel blue/green diode laser based on MgZnSeTe alloy
|
Cai, Yijun
|
|
1995
|
38 |
3 |
p. 735-736
2 p.
|
artikel
|
| 8 |
Disk and stripe capacitances
|
Gelmont, B.
|
|
1995
|
38 |
3 |
p. 731-734
4 p.
|
artikel
|
| 9 |
Effect of high hydrostatic pressure on the electrophysical properties of doped silicon crystals and devices based on them
|
Zainabidinov, S.Z.
|
|
1995
|
38 |
3 |
p. 693-695
3 p.
|
artikel
|
| 10 |
Effect of impact ionization on CJC of heterojunction bipolar transistors
|
Yuan, J.S.
|
|
1995
|
38 |
3 |
p. 742-744
3 p.
|
artikel
|
| 11 |
Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETs
|
Gámiz, F.
|
|
1995
|
38 |
3 |
p. 611-614
4 p.
|
artikel
|
| 12 |
Effects of profile doped elevated source/drain structures on deep-submicron MOSFETs
|
Tian, H.
|
|
1995
|
38 |
3 |
p. 573-579
7 p.
|
artikel
|
| 13 |
Electronic states in p-n junctions in thermal equilibrium
|
Domínguez, E.
|
|
1995
|
38 |
3 |
p. 721-730
10 p.
|
artikel
|
| 14 |
Erratum
|
|
|
1995
|
38 |
3 |
p. I-
1 p.
|
artikel
|
| 15 |
Fabrication of voltage-controlled strained-layer quantum well three-terminal switching device
|
Lour, Wen-Shiung
|
|
1995
|
38 |
3 |
p. 557-560
4 p.
|
artikel
|
| 16 |
High temperature thermal stability of plasma-deposited tungsten nitride Schottky contacts to GaAs
|
Lee, Chang Woo
|
|
1995
|
38 |
3 |
p. 679-682
4 p.
|
artikel
|
| 17 |
Influence of a postoxidation cooling on the interface state density of MOS structures
|
Kaschieva, S.
|
|
1995
|
38 |
3 |
p. 609-610
2 p.
|
artikel
|
| 18 |
Influence of a single InGaAs quantum well on current transport and deep levels in GaAs
|
Wang, A.Z.
|
|
1995
|
38 |
3 |
p. 673-678
6 p.
|
artikel
|
| 19 |
Lateral titanium silicide growth and its suppression using the a-Si Ti bilayer structure
|
Lou, Yung-Song
|
|
1995
|
38 |
3 |
p. 715-720
6 p.
|
artikel
|
| 20 |
Modelling the turn-off characteristics of the base resistance controlled thyristor (BRT)
|
Nandakumar, M.
|
|
1995
|
38 |
3 |
p. 703-713
11 p.
|
artikel
|
| 21 |
Monte Carlo simulation of high field electron transport in ZnS
|
Fogarty, J.
|
|
1995
|
38 |
3 |
p. 653-660
8 p.
|
artikel
|
| 22 |
Optical multi-stable set-reset functions of optoelectronic integrated device composed of six heterojunction phototransistors over two laser diodes
|
Ahmadi, Vahid
|
|
1995
|
38 |
3 |
p. 551-556
6 p.
|
artikel
|
| 23 |
Reverse short-channel effect of threshold voltage in LOCOS parasitic MOSFETs
|
Tanaka, Junko
|
|
1995
|
38 |
3 |
p. 567-572
6 p.
|
artikel
|
| 24 |
Short-channel effects on MOSFET subthreshold swing
|
Tarr, N.G.
|
|
1995
|
38 |
3 |
p. 697-701
5 p.
|
artikel
|
| 25 |
Simulation of bandgap narrowing and incomplete ionization in strained Si1−x Ge x alloys on 〈001〉 Si substrate (for temperatures from 40 K up to 400 K)
|
Mamontov, Yevgeny V.
|
|
1995
|
38 |
3 |
p. 599-607
9 p.
|
artikel
|
| 26 |
Technology and characterization of polysilicon emitter bipolar transistors for power applications
|
Austin, P.
|
|
1995
|
38 |
3 |
p. 587-598
12 p.
|
artikel
|
| 27 |
The composition dependence of the cut-off frequencies of ungraded Si1−x Ge x/Si1−yGey/Si1−xGex HBTs
|
Rosenfeld, D.
|
|
1995
|
38 |
3 |
p. 641-651
11 p.
|
artikel
|
| 28 |
Theory of non-steady-state electrical characteristics of metal-insulator-metal structures with Schottky barriers and uniformly distributed interface impurity states
|
Gupta, H.M.
|
|
1995
|
38 |
3 |
p. 619-625
7 p.
|
artikel
|
| 29 |
Theory of the drain leakage current in silicon MOSFETs
|
Tanaka, Sumio
|
|
1995
|
38 |
3 |
p. 683-691
9 p.
|
artikel
|
| 30 |
Thin film II–VI photovoltaics
|
Chu, Ting L.
|
|
1995
|
38 |
3 |
p. 533-549
17 p.
|
artikel
|
| 31 |
Two-dimensional analysis of surface recombination at the extrinsic base surface under various conditions in AlGaAs GaAs heterojunction bipolar transistors
|
Kim, Chang-Woo
|
|
1995
|
38 |
3 |
p. 633-639
7 p.
|
artikel
|
| 32 |
Very-low-frequency (VLF) investigations of the MOSFET's high-order derivatives
|
Yakymakha, O.L.
|
|
1995
|
38 |
3 |
p. 661-671
11 p.
|
artikel
|
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