| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Analog characteristics of drain engineered submicron MOSFETs for mixed-signal applications
|
Chen, Hung-Sheng
|
|
1995
|
38 |
11 |
p. 1857-1859
3 p.
|
article
|
| 2 |
Analytical model of Si SiGe field-effect transistors
|
Sadek, A
|
|
1995
|
38 |
11 |
p. 1969-1971
3 p.
|
article
|
| 3 |
A neuron-like Multi-Quantum-Well Injection-Mode Device for electronic pulse-mode circuits
|
Song, Chungkun
|
|
1995
|
38 |
11 |
p. 1953-1967
15 p.
|
article
|
| 4 |
An explicit physical model for the long-channel MOS transistor including small-signal parameters
|
Araújo Cunha, Ana Isabela
|
|
1995
|
38 |
11 |
p. 1945-1952
8 p.
|
article
|
| 5 |
Annealing effect on the characteristics of MTIS solar cells
|
Vdovenkova, T.A
|
|
1995
|
38 |
11 |
p. 1929-1932
4 p.
|
article
|
| 6 |
Calculations of the temperature and field dependent electronic mobility in β-SiC
|
Joshi, R.P
|
|
1995
|
38 |
11 |
p. 1911-1916
6 p.
|
article
|
| 7 |
Current transport in Ti GaAs Schottky barriers prepared by ion beam sputtering
|
Di Dio, M
|
|
1995
|
38 |
11 |
p. 1923-1928
6 p.
|
article
|
| 8 |
Electron transfer between two coupled quantum wells in a resonant tunneling diode structure
|
Mounaix, P
|
|
1995
|
38 |
11 |
p. 1899-1904
6 p.
|
article
|
| 9 |
Experimental investigation of the double exponential model of a solar cell under illuminated conditions: Considering the instrumental uncertainties in the current, voltage and temperature values
|
Veissid, N
|
|
1995
|
38 |
11 |
p. 1937-1943
7 p.
|
article
|
| 10 |
Flexible, thin-film, GaAs hetero-junction bipolar transistors mounted on natural diamond substrates
|
Arbet-Engels, V
|
|
1995
|
38 |
11 |
p. 1972-1974
3 p.
|
article
|
| 11 |
High-frequency noise of bipolar devices in consideration of carrier heating and low temperature effects
|
Herzel, Frank
|
|
1995
|
38 |
11 |
p. 1905-1909
5 p.
|
article
|
| 12 |
Impact of silicidation on the excess noise behaviour of mos transistors
|
Vandamme, E.P
|
|
1995
|
38 |
11 |
p. 1893-1897
5 p.
|
article
|
| 13 |
Influence of carrier energy quantization on the gate-induced drain breakdown
|
Majkusiak, Bogdan
|
|
1995
|
38 |
11 |
p. 1933-1936
4 p.
|
article
|
| 14 |
Investigation of wet etching solutions for In0.5Ga0.5P
|
Lee, J.W
|
|
1995
|
38 |
11 |
p. 1871-1874
4 p.
|
article
|
| 15 |
Observation and modelling of RTS in InAlAs/InGaAs/InP HFETs
|
Sommer, V
|
|
1995
|
38 |
11 |
p. 1917-1922
6 p.
|
article
|
| 16 |
Optical and chemical analysis of the Ag In0.53Ga0.47As interface formed at low temperature
|
Lee, H.J
|
|
1995
|
38 |
11 |
p. 1875-1878
4 p.
|
article
|
| 17 |
Polysilicon gate depletion effect on IC performance
|
Chen, Kai
|
|
1995
|
38 |
11 |
p. 1975-1977
3 p.
|
article
|
| 18 |
Study of shallow bulk traps in thin nitrided oxide films by thermal re-emission of electrons trapped at high field
|
Yang, B.L
|
|
1995
|
38 |
11 |
p. 1887-1891
5 p.
|
article
|
| 19 |
Temperature effects on pin diode forward bias resistance
|
Caverly, Robert
|
|
1995
|
38 |
11 |
p. 1879-1885
7 p.
|
article
|
| 20 |
Theory and application of polysilicon resistor trimming
|
Feldbaumer, D.W
|
|
1995
|
38 |
11 |
p. 1861-1869
9 p.
|
article
|
Journal description