| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparative study of the Kirk effect in GaAs and Si bipolar junction transistors
|
Lee, Joonwoo
|
|
1994
|
37 |
8 |
p. 1485-1490
6 p.
|
artikel
|
| 2 |
A fully analytical partitioned-charge-based model for linearly-graded SiGe-base heterojunction bipolar transistors
|
Kuo, J.B.
|
|
1994
|
37 |
8 |
p. 1561-1566
6 p.
|
artikel
|
| 3 |
A low temperature ion-beam assisted deposition method for realizing SiGe/Si heterostructures
|
Mohajerzadeh, S.
|
|
1994
|
37 |
8 |
p. 1467-1469
3 p.
|
artikel
|
| 4 |
Analytical modeling of polycrystalline silicon emitter bipolar transistors under high-level injection
|
Chyan, Yih-Feng
|
|
1994
|
37 |
8 |
p. 1521-1529
9 p.
|
artikel
|
| 5 |
Analytical two-dimensional modeling for potential distribution and threshold voltage of the short-channel fully depleted SOI (silicon-on-insulator) MOSFET
|
Aggarwal, Vaneeta
|
|
1994
|
37 |
8 |
p. 1537-1542
6 p.
|
artikel
|
| 6 |
An analytical model of current-voltage characteristics and d.c. small-signal parameters for Si/Si1−x Ge x FETs
|
Liu, Kuo-Wei
|
|
1994
|
37 |
8 |
p. 1570-1572
3 p.
|
artikel
|
| 7 |
1/ƒ and g-r noise in AlGaAs epitaxial layers
|
Pascal, F.
|
|
1994
|
37 |
8 |
p. 1503-1508
6 p.
|
artikel
|
| 8 |
Announcement
|
|
|
1994
|
37 |
8 |
p. iii-
1 p.
|
artikel
|
| 9 |
A unified theory of direct and indirect interband tunneling under a nonuniform electric field
|
Tanaka, Sumio
|
|
1994
|
37 |
8 |
p. 1543-1552
10 p.
|
artikel
|
| 10 |
Barrier height enhancement of Pt/n-InP Schottky diodes by P2S5/(NH4)2S solution treatment of the InP surface
|
Huang, T.S.
|
|
1994
|
37 |
8 |
p. 1461-1466
6 p.
|
artikel
|
| 11 |
Design of IGBTs for latch-up free operation
|
Zeng, J.
|
|
1994
|
37 |
8 |
p. 1471-1475
5 p.
|
artikel
|
| 12 |
High frequency noise and diffusion coefficient of hot electrons in bulk Al0.25 Ga0.75 As
|
de Murcia, M.
|
|
1994
|
37 |
8 |
p. 1477-1483
7 p.
|
artikel
|
| 13 |
High-level injection influence on the high frequency performance of polycrystalline silicon emitter bipolar transistors
|
Chyan, Yih-Feng
|
|
1994
|
37 |
8 |
p. 1531-1536
6 p.
|
artikel
|
| 14 |
Improvement of reverse leakage current characteristics of GaSb and Al0.3Ga0.7Sb/GaSb diodes grown by MBE
|
Kodama, Mitsuru
|
|
1994
|
37 |
8 |
p. 1567-1569
3 p.
|
artikel
|
| 15 |
New technique for the characterization of Si/SiGe layers using heterostructure MOS capacitors
|
Voinigescu, S.P.
|
|
1994
|
37 |
8 |
p. 1491-1501
11 p.
|
artikel
|
| 16 |
Numerical simulation of the temperature dependence of the sidegating effect in GaAs MESFETs
|
Chang, Shwu-Jing
|
|
1994
|
37 |
8 |
p. 1557-1559
3 p.
|
artikel
|
| 17 |
On the relaxation of field induced oxide charge in metal-oxide-semiconductor capacitors
|
Meinertzhagen, A.
|
|
1994
|
37 |
8 |
p. 1553-1556
4 p.
|
artikel
|
| 18 |
Scattering matrix formulation of electron transport in compound semiconductor devices
|
Alam, Muhammad A.
|
|
1994
|
37 |
8 |
p. 1509-1520
12 p.
|
artikel
|
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