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                             21 results found
no title author magazine year volume issue page(s) type
1 A compact HBT device model based on a one-flux treatment of carrier transport Tanaka, Shin-ichi
1994
37 3 p. 401-410
10 p.
article
2 A comparative study on the noise measure of millimetre-wave GaAs impatt diodes Harth, W.
1994
37 3 p. 427-431
5 p.
article
3 A comparison of square, triangular, and sinusoidal waveforms used for avalanche electron injection in MOS structures Ang, S.S.
1994
37 3 p. 415-419
5 p.
article
4 A fully analytical back-gate bias model for n-channel silicon MESFETs with back channel implant Sim, J.H.
1994
37 3 p. 459-462
4 p.
article
5 Al/n-Si diodes with low energy (∼100 eV) hydrogen ion implantation prior to metallization Srivastava, P.C.
1994
37 3 p. 520-522
3 p.
article
6 Analytical base transit time model for high-injection regions Suzuki, Kunihiro
1994
37 3 p. 487-493
7 p.
article
7 An analytical delayed-turn-on model for accumulation-type ultra-thin SOI PMOS devices operating at 77 K Sim, J.H.
1994
37 3 p. 463-472
10 p.
article
8 A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions van Dort, M.J.
1994
37 3 p. 411-414
4 p.
article
9 Band discontinuities of Si/Ge heterostructures Liu, Lifeng
1994
37 3 p. 421-425
5 p.
article
10 Comments on “selfheating effects in silicon resistors operated at cryogenic ambient temperatures” Székely, V.
1994
37 3 p. 515-516
2 p.
article
11 Critical analysis of the substrate hot-hole injection technique Van den bosch, Geert
1994
37 3 p. 393-399
7 p.
article
12 Electrical characteristics of Al/SiO2/n-Si tunnel diodes with an oxide layer grown by rapid thermal oxidation Depas, M.
1994
37 3 p. 433-441
9 p.
article
13 Electron transport of inhomogeneous α-FeSi2/(111)Si Schottky barriers Radermacher, K.
1994
37 3 p. 443-449
7 p.
article
14 Modeling the d.c. characteristics of merged bipolar-MOS structures Liang, S.
1994
37 3 p. 387-392
6 p.
article
15 New techniques to measure parasitic resistances in Schottky-gate FETs Blanco, F.
1994
37 3 p. 451-458
8 p.
article
16 Non-quasi-static modeling of neutral region a.c. photo currents in integrated photodiode detectors Hamel, John Starr
1994
37 3 p. 473-479
7 p.
article
17 On the charge build-up mechanisms in gate dielectrics Papadas, C.
1994
37 3 p. 495-505
11 p.
article
18 Publisher's note 1994
37 3 p. iii-
1 p.
article
19 Study of process-dependent electron-trapping characteristics of thin nitrided oxides Yang, B.L.
1994
37 3 p. 481-486
6 p.
article
20 The effect of a parasitic potential barrier on the neutral base recombination current of Si/SiGe/Si DHBTs Kim, Sung-Ihl
1994
37 3 p. 517-519
3 p.
article
21 The effect of the hole current on the channel inversion in trench insulated gate bipolar transistors (TIGBT) Udrea, Florin
1994
37 3 p. 507-514
8 p.
article
                             21 results found
 
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