| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A compact HBT device model based on a one-flux treatment of carrier transport
|
Tanaka, Shin-ichi
|
|
1994
|
37 |
3 |
p. 401-410
10 p.
|
artikel
|
| 2 |
A comparative study on the noise measure of millimetre-wave GaAs impatt diodes
|
Harth, W.
|
|
1994
|
37 |
3 |
p. 427-431
5 p.
|
artikel
|
| 3 |
A comparison of square, triangular, and sinusoidal waveforms used for avalanche electron injection in MOS structures
|
Ang, S.S.
|
|
1994
|
37 |
3 |
p. 415-419
5 p.
|
artikel
|
| 4 |
A fully analytical back-gate bias model for n-channel silicon MESFETs with back channel implant
|
Sim, J.H.
|
|
1994
|
37 |
3 |
p. 459-462
4 p.
|
artikel
|
| 5 |
Al/n-Si diodes with low energy (∼100 eV) hydrogen ion implantation prior to metallization
|
Srivastava, P.C.
|
|
1994
|
37 |
3 |
p. 520-522
3 p.
|
artikel
|
| 6 |
Analytical base transit time model for high-injection regions
|
Suzuki, Kunihiro
|
|
1994
|
37 |
3 |
p. 487-493
7 p.
|
artikel
|
| 7 |
An analytical delayed-turn-on model for accumulation-type ultra-thin SOI PMOS devices operating at 77 K
|
Sim, J.H.
|
|
1994
|
37 |
3 |
p. 463-472
10 p.
|
artikel
|
| 8 |
A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions
|
van Dort, M.J.
|
|
1994
|
37 |
3 |
p. 411-414
4 p.
|
artikel
|
| 9 |
Band discontinuities of Si/Ge heterostructures
|
Liu, Lifeng
|
|
1994
|
37 |
3 |
p. 421-425
5 p.
|
artikel
|
| 10 |
Comments on “selfheating effects in silicon resistors operated at cryogenic ambient temperatures”
|
Székely, V.
|
|
1994
|
37 |
3 |
p. 515-516
2 p.
|
artikel
|
| 11 |
Critical analysis of the substrate hot-hole injection technique
|
Van den bosch, Geert
|
|
1994
|
37 |
3 |
p. 393-399
7 p.
|
artikel
|
| 12 |
Electrical characteristics of Al/SiO2/n-Si tunnel diodes with an oxide layer grown by rapid thermal oxidation
|
Depas, M.
|
|
1994
|
37 |
3 |
p. 433-441
9 p.
|
artikel
|
| 13 |
Electron transport of inhomogeneous α-FeSi2/(111)Si Schottky barriers
|
Radermacher, K.
|
|
1994
|
37 |
3 |
p. 443-449
7 p.
|
artikel
|
| 14 |
Modeling the d.c. characteristics of merged bipolar-MOS structures
|
Liang, S.
|
|
1994
|
37 |
3 |
p. 387-392
6 p.
|
artikel
|
| 15 |
New techniques to measure parasitic resistances in Schottky-gate FETs
|
Blanco, F.
|
|
1994
|
37 |
3 |
p. 451-458
8 p.
|
artikel
|
| 16 |
Non-quasi-static modeling of neutral region a.c. photo currents in integrated photodiode detectors
|
Hamel, John Starr
|
|
1994
|
37 |
3 |
p. 473-479
7 p.
|
artikel
|
| 17 |
On the charge build-up mechanisms in gate dielectrics
|
Papadas, C.
|
|
1994
|
37 |
3 |
p. 495-505
11 p.
|
artikel
|
| 18 |
Publisher's note
|
|
|
1994
|
37 |
3 |
p. iii-
1 p.
|
artikel
|
| 19 |
Study of process-dependent electron-trapping characteristics of thin nitrided oxides
|
Yang, B.L.
|
|
1994
|
37 |
3 |
p. 481-486
6 p.
|
artikel
|
| 20 |
The effect of a parasitic potential barrier on the neutral base recombination current of Si/SiGe/Si DHBTs
|
Kim, Sung-Ihl
|
|
1994
|
37 |
3 |
p. 517-519
3 p.
|
artikel
|
| 21 |
The effect of the hole current on the channel inversion in trench insulated gate bipolar transistors (TIGBT)
|
Udrea, Florin
|
|
1994
|
37 |
3 |
p. 507-514
8 p.
|
artikel
|
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