| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A novel diac-like switch using double triangular barriers
|
Yarn, Kao-Feng
|
|
1994
|
37 |
11 |
p. 1849-1852
4 p.
|
artikel
|
| 2 |
A novel test structure for monitoring doping variations in a MOSFET
|
Joardar, Kuntal
|
|
1994
|
37 |
11 |
p. 1793-1797
5 p.
|
artikel
|
| 3 |
A semi-numerical model for multi-emitter finger AlGaAs/GaAs HBTs
|
Kager, A.
|
|
1994
|
37 |
11 |
p. 1825-1832
8 p.
|
artikel
|
| 4 |
Call for papers
|
|
|
1994
|
37 |
11 |
p. I-II
nvt p.
|
artikel
|
| 5 |
Closed-form calculations of two-dimensional scattering rates in semiconductor heterostructures
|
Abou-Elnour, Ali
|
|
1994
|
37 |
11 |
p. 1817-1824
8 p.
|
artikel
|
| 6 |
Comment on “analytical low-frequency 1/f noise model for Lightly-Doped-Drain MOSFETs operating in the linear region” by Sheng-Lyang Jang
|
van Rheenen, Arthur D.
|
|
1994
|
37 |
11 |
p. 1903-1904
2 p.
|
artikel
|
| 7 |
Cryogenic operation of PiN power rectifiers
|
Singh, Ranbir
|
|
1994
|
37 |
11 |
p. 1833-1839
7 p.
|
artikel
|
| 8 |
Electron transport in graded-band devices: Interplay of field, composition and length dependencies
|
Zhou, Xing
|
|
1994
|
37 |
11 |
p. 1888-1890
3 p.
|
artikel
|
| 9 |
Formation of the altered layer in silicon during RF reactive sputtering
|
Galdikas, A.
|
|
1994
|
37 |
11 |
p. 1891-1895
5 p.
|
artikel
|
| 10 |
Harmonic and intermodulation generation in GaAs, InP, InGaAs and Si semiconductors
|
Abuelma'atti, Muhammad Taher
|
|
1994
|
37 |
11 |
p. 1877-1884
8 p.
|
artikel
|
| 11 |
Observation of discrete energy levels of interface traps in sub-μm MOSFETs
|
Siegert, G.R.
|
|
1994
|
37 |
11 |
p. 1799-1808
10 p.
|
artikel
|
| 12 |
Optimized design of a two-phase GaAs CMCCD and its charge transfer simulation
|
Chen, L.
|
|
1994
|
37 |
11 |
p. 1863-1869
7 p.
|
artikel
|
| 13 |
Optimum collector EPI-thickness of advanced bipolar transistors for high speed and high current operation
|
Kumar, M.Jagadesh
|
|
1994
|
37 |
11 |
p. 1885-1887
3 p.
|
artikel
|
| 14 |
Optoelectronic properties of eutectic-metal-bonded (EMB) GaAs-AlGaAs structures on Si substrates
|
Venkatasubramanian, R.
|
|
1994
|
37 |
11 |
p. 1809-1815
7 p.
|
artikel
|
| 15 |
Parameter extraction and 1/f noise in a surface and a bulk-type, p-channel LDD MOSFET
|
Li, Xiaosong
|
|
1994
|
37 |
11 |
p. 1853-1862
10 p.
|
artikel
|
| 16 |
Photovoltaic properties of electrochemically doped polyacetylene and its stability
|
Lee, M.S.
|
|
1994
|
37 |
11 |
p. 1899-1901
3 p.
|
artikel
|
| 17 |
Temperature-dependent I D -V D characteristics and analytical model for a-Si:H thin film transistors
|
Lee, Woo-Sun
|
|
1994
|
37 |
11 |
p. 1896-1898
3 p.
|
artikel
|
| 18 |
Transient response of high-speed p-i-n photodiodes including diffusion effects
|
George, G.
|
|
1994
|
37 |
11 |
p. 1841-1847
7 p.
|
artikel
|
| 19 |
Trench-proximity effects on collector current in self-aligned NPN and PNP bipolar transistors
|
Lu, P.-F.
|
|
1994
|
37 |
11 |
p. 1871-1875
5 p.
|
artikel
|
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