| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A MOSFET with Si-implanted gate-SiO2 structure for analog-storage EEPROm applications
|
Ohzone, Takashi
|
|
1994
|
37 |
10 |
p. 1771-1774
4 p.
|
artikel
|
| 2 |
Call for papers
|
|
|
1994
|
37 |
10 |
p. I-II
nvt p.
|
artikel
|
| 3 |
Comments on “theoretical analysis of current gain of normally-off junction type field-effect transistor”
|
Strollo, Antonio G.M.
|
|
1994
|
37 |
10 |
p. 1791-1792
2 p.
|
artikel
|
| 4 |
Comparative modelling of current gain and cutoff frequency for heterostructure confinement and heterojunction bipolar transistors
|
Rutherford, William C.
|
|
1994
|
37 |
10 |
p. 1783-1785
3 p.
|
artikel
|
| 5 |
Effect of backgate bias on the breakdown voltage of P-N junctions in SOI films
|
Mohsen, Zain O.
|
|
1994
|
37 |
10 |
p. 1778-1780
3 p.
|
artikel
|
| 6 |
Effect of localized states on the current-voltage characteristics of metal-semiconductor contacts with thin interfacial layer
|
Chattopadhyay, P.
|
|
1994
|
37 |
10 |
p. 1759-1762
4 p.
|
artikel
|
| 7 |
Ensemble Monte Carlo particle simulation of nonuniformly doped submicrometer gunn diodes
|
Khrenov, G.
|
|
1994
|
37 |
10 |
p. 1789-1790
2 p.
|
artikel
|
| 8 |
Extraction of substrate current model parameters from device simulation
|
Saha, Samar
|
|
1994
|
37 |
10 |
p. 1786-1788
3 p.
|
artikel
|
| 9 |
Generalized energy transport models for semiconductor device simulation
|
Vecchi, M.C.
|
|
1994
|
37 |
10 |
p. 1705-1716
12 p.
|
artikel
|
| 10 |
Heavy doping effects on open circuit voltage decay in an abrupt p +-n junction
|
De, S.S.
|
|
1994
|
37 |
10 |
p. 1775-1777
3 p.
|
artikel
|
| 11 |
Hot-carrier dependent radiation effects in p-channel metal oxide semiconductor field effect transistors
|
Das, N.C.
|
|
1994
|
37 |
10 |
p. 1781-1782
2 p.
|
artikel
|
| 12 |
Modeling the bipolar oscillator phase noise
|
Yuan, J.S.
|
|
1994
|
37 |
10 |
p. 1765-1767
3 p.
|
artikel
|
| 13 |
Narrow gate effect on depletion mode insulated gate field effect transistor
|
Haldar, Subhasis
|
|
1994
|
37 |
10 |
p. 1717-1721
5 p.
|
artikel
|
| 14 |
Observation of negative-differential-resistance in strained n-type Si/SiGe MODFETs
|
Zhou, G.L.
|
|
1994
|
37 |
10 |
p. 1687-1689
3 p.
|
artikel
|
| 15 |
On the understanding of electron and hole mobility models from room to liquid helium temperatures
|
Emrani, A.
|
|
1994
|
37 |
10 |
p. 1723-1730
8 p.
|
artikel
|
| 16 |
Optical recording using copper phthalocyanine thin films
|
Chen, Qiying
|
|
1994
|
37 |
10 |
p. 1768-1770
3 p.
|
artikel
|
| 17 |
Properties of MIS structures prepared on InGaAsSb quaternary solutions by anodic oxidation
|
Polyakov, A.Y.
|
|
1994
|
37 |
10 |
p. 1691-1694
4 p.
|
artikel
|
| 18 |
Publisher's note
|
|
|
1994
|
37 |
10 |
p. iii-
1 p.
|
artikel
|
| 19 |
Shot noise in GaAs metal semiconductor field effect transistors with high gate leakage current
|
Strifler, W.A.
|
|
1994
|
37 |
10 |
p. 1763-1764
2 p.
|
artikel
|
| 20 |
Sidewall effects on maximum cutoff frequency and forward transit time in downscaled bipolar transistors
|
Rinaldi, Niccoló
|
|
1994
|
37 |
10 |
p. 1731-1737
7 p.
|
artikel
|
| 21 |
Temperature dependence of the electrical characteristics of Ag/In0.53Ga0.47As diodes formed at low temperature
|
Lee, H.J.
|
|
1994
|
37 |
10 |
p. 1683-1686
4 p.
|
artikel
|
| 22 |
The interaction of stoichiometry, mechanical stress, and interface trap density in LPCVD Si-rich SiN x ;Si structures
|
Witczak, Steven C.
|
|
1994
|
37 |
10 |
p. 1695-1704
10 p.
|
artikel
|
| 23 |
Time domain modeling of a microwave Schottky diode
|
He, Jianqing
|
|
1994
|
37 |
10 |
p. 1753-1758
6 p.
|
artikel
|
| 24 |
Very-low-frequency resonance of MOSFET amplifier parameters
|
Yakymakha, O.L.
|
|
1994
|
37 |
10 |
p. 1739-1751
13 p.
|
artikel
|
Tijdschrift beschrijving