| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate simulation of fast ion irradiated power devices
|
Hazdra, P.
|
|
1994
|
37 |
1 |
p. 127-134
8 p.
|
artikel
|
| 2 |
A comparison of some approximations for the Fermi-Dirac integral of order 1 2
|
Wong, Stephen A.
|
|
1994
|
37 |
1 |
p. 61-64
4 p.
|
artikel
|
| 3 |
A contribution to the optimization of front-contact grid patterns for solar cells
|
Nubile, P.
|
|
1994
|
37 |
1 |
p. 220-222
3 p.
|
artikel
|
| 4 |
A direct and accurate method for the extraction of diffusion length and surface recombination velocity from an EBIC line scan
|
Ong, V.K.S.
|
|
1994
|
37 |
1 |
p. 1-7
7 p.
|
artikel
|
| 5 |
AlGaAs/GaAs HBT collector optimization for high frequency performance
|
Khrenov, G.
|
|
1994
|
37 |
1 |
p. 213-214
2 p.
|
artikel
|
| 6 |
Analytical model of the effective recombination velocity of diffused p−p + (n−n +) high-low junctions at arbitrary injection level
|
Bellone, Salvatore
|
|
1994
|
37 |
1 |
p. 83-92
10 p.
|
artikel
|
| 7 |
Analytic expressions for the field dependent tunnelling attenuation factor in thin insulators
|
Lavelle, S.W.
|
|
1994
|
37 |
1 |
p. 141-145
5 p.
|
artikel
|
| 8 |
An efficient and accurate self-consistent calculation of electronic states in modulation doped heterostructures
|
Abou-Elnour, Ali
|
|
1994
|
37 |
1 |
p. 27-30
4 p.
|
artikel
|
| 9 |
A new experimental method (E-plot) to characterize the substrate-current and the saturation-voltage of fresh and hot-electron-damaged NMOSFETs
|
Kim, Shi-Ho
|
|
1994
|
37 |
1 |
p. 198-200
3 p.
|
artikel
|
| 10 |
A new intermediate state model for the GTO: Relation to the turn-off process
|
Gribnikov, Z.
|
|
1994
|
37 |
1 |
p. 135-139
5 p.
|
artikel
|
| 11 |
Annealing of gamma-irradiated Al-gate NMOS transistors
|
Pejović, M.
|
|
1994
|
37 |
1 |
p. 215-216
2 p.
|
artikel
|
| 12 |
A novel fabrication process and analytical model for Pt/GaAs Schottky barrier mixer diodes
|
Krozer, V.
|
|
1994
|
37 |
1 |
p. 169-180
12 p.
|
artikel
|
| 13 |
A self-consistent calculation of the small signal parameters for AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs
|
Liu, Kuo-Wei
|
|
1994
|
37 |
1 |
p. 51-54
4 p.
|
artikel
|
| 14 |
A simple trap-detrap model for accurate prediction of radiation induced threshold voltage shifts in radiation tolerant oxides for all static or time variant oxide fields
|
Kimpton, Derek
|
|
1994
|
37 |
1 |
p. 153-158
6 p.
|
artikel
|
| 15 |
A spectral analysis method to directly determine minority carrier generation lifetime using the pulsed MOS structure
|
Xu, Mingzhen
|
|
1994
|
37 |
1 |
p. 31-36
6 p.
|
artikel
|
| 16 |
Calculation of avalanche breakdown voltage of the InP P+-N junction
|
Moon, Tae-Hun
|
|
1994
|
37 |
1 |
p. 187-188
2 p.
|
artikel
|
| 17 |
Characterization and modeling of the n- and p-channel MOSFETs inversion-layer mobility in the range 25–125°C
|
Huang, Cheng-Liang
|
|
1994
|
37 |
1 |
p. 97-103
7 p.
|
artikel
|
| 18 |
Charge-control and mobility in Si delta-doped FETs grown by MBE
|
Chen, Q.
|
|
1994
|
37 |
1 |
p. 105-109
5 p.
|
artikel
|
| 19 |
CMOS on-chip electrostatic discharge protection circuit using four-SCR structures with low ESD-trigger voltage
|
Ker, Ming-Dou
|
|
1994
|
37 |
1 |
p. 17-26
10 p.
|
artikel
|
| 20 |
Collector-emitter offset voltage in InP/InGaAs single and double heterojunction bipolar transistors
|
Ouacha, A.
|
|
1994
|
37 |
1 |
p. 201-203
3 p.
|
artikel
|
| 21 |
Comparison of gate-edge effects on the hot-carrier induced degradation of LDD N- and P-channel MOSFETs
|
Pan, Y.
|
|
1994
|
37 |
1 |
p. 77-82
6 p.
|
artikel
|
| 22 |
Current switching and instability in a heterostructure hot electron diode
|
Reklaitis, A.
|
|
1994
|
37 |
1 |
p. 147-152
6 p.
|
artikel
|
| 23 |
Dependence of the activity efficiency of Mg-implanted into GaAs on the concentration of As doped into a-Si:H encapsulants
|
Yokota, Katsuhiro
|
|
1994
|
37 |
1 |
p. 9-15
7 p.
|
artikel
|
| 24 |
Determination of the fitting parameters for using uniform emitter and base doping profile in bipolar transistor modeling
|
Liou, J.J.
|
|
1994
|
37 |
1 |
p. 183-186
4 p.
|
artikel
|
| 25 |
Editorial Board
|
|
|
1994
|
37 |
1 |
p. IFC-
1 p.
|
artikel
|
| 26 |
Effect of RPT/furnace processing on the minority carrier lifetime in very thin oxide MOS capacitors
|
Fonseca, L.
|
|
1994
|
37 |
1 |
p. 115-117
3 p.
|
artikel
|
| 27 |
Effect of thickness and granular structure on the electrical conductivity of the active layer in polycrystalline silicon TFTs
|
Sehil, H.
|
|
1994
|
37 |
1 |
p. 159-168
10 p.
|
artikel
|
| 28 |
Fowler-Nordheim tunnelling current in an Mg/SiO2/Si MOS structure
|
Sik, On Kong
|
|
1994
|
37 |
1 |
p. 45-49
5 p.
|
artikel
|
| 29 |
Fowler-Nordheim tunnelling current in a yttrium/silicon dioxide/silicon MOS structure
|
Kong, Sik On
|
|
1994
|
37 |
1 |
p. 189-191
3 p.
|
artikel
|
| 30 |
Generalized piezoelectric scattering rate for electrons in a two-dimensional electron gas
|
Stroscio, Michael A.
|
|
1994
|
37 |
1 |
p. 181-182
2 p.
|
artikel
|
| 31 |
Monte-Carlo simulation of gate leakage current effect in P-channel GaAs/Al0.7Ga0.3As HIGFET
|
Pankratov, V.
|
|
1994
|
37 |
1 |
p. 211-212
2 p.
|
artikel
|
| 32 |
Novel characteristics of the polysilicon high-low-emitter (PHL-emitter) bipolar transistor—High current gain and zero activation energy
|
Chang, Kun-Zen
|
|
1994
|
37 |
1 |
p. 93-96
4 p.
|
artikel
|
| 33 |
Ohmic contacts of Au and Ag to p-GaSb
|
Milnes, A.G.
|
|
1994
|
37 |
1 |
p. 37-44
8 p.
|
artikel
|
| 34 |
On the dependence of cut-off frequency of a Schottky diode on epilayer doping
|
Mukhopadhyay, S.
|
|
1994
|
37 |
1 |
p. 192-194
3 p.
|
artikel
|
| 35 |
On the universal electric field dependence of the electron and hole effective mobility in MOS inversion layers
|
Emrani, A.
|
|
1994
|
37 |
1 |
p. 111-113
3 p.
|
artikel
|
| 36 |
Properties of Au-Ge ohmic contacts after the alloying process
|
Skrabka, T.
|
|
1994
|
37 |
1 |
p. 195-197
3 p.
|
artikel
|
| 37 |
Publisher's note
|
|
|
1994
|
37 |
1 |
p. iii-
1 p.
|
artikel
|
| 38 |
Resistivity profile measurements of proton-irradiated n-type silicon
|
Keskitalo, Niclas
|
|
1994
|
37 |
1 |
p. 55-60
6 p.
|
artikel
|
| 39 |
Study of tantalum-based diffusion barriers between Al and Si
|
Wang, Wen-Chun
|
|
1994
|
37 |
1 |
p. 65-69
5 p.
|
artikel
|
| 40 |
Subthreshold characteristics of a SiGe-channel PMOS device operating at 77 K
|
Kuo, J.B.
|
|
1994
|
37 |
1 |
p. 204-206
3 p.
|
artikel
|
| 41 |
Temperature dependence of forward current-voltage characteristics in a GaAs PiN structure with near-fully compensated i-region under low and high injection conditions
|
Ashkinazi, G.
|
|
1994
|
37 |
1 |
p. 71-76
6 p.
|
artikel
|
| 42 |
The double sweep HF-CV technique for generation lifetime determination in MOS capacitors
|
Sorge, Roland
|
|
1994
|
37 |
1 |
p. 217-219
3 p.
|
artikel
|
| 43 |
The effect of strain on the base resistance and transit time of ungraded and compositional-graded SiGe HBTs
|
Rosenfeld, D.
|
|
1994
|
37 |
1 |
p. 119-126
8 p.
|
artikel
|
| 44 |
Transconductance compression near subthreshold of GaAs floated electron channel field effect transistor
|
Lee, Y.J.
|
|
1994
|
37 |
1 |
p. 207-210
4 p.
|
artikel
|
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