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                             44 results found
no title author magazine year volume issue page(s) type
1 Accurate simulation of fast ion irradiated power devices Hazdra, P.
 1994
 37 1 p. 127-134
8 p.
 article
2 A comparison of some approximations for the Fermi-Dirac integral of order 1 2 Wong, Stephen A.
 1994
 37 1 p. 61-64
4 p.
 article
3 A contribution to the optimization of front-contact grid patterns for solar cells Nubile, P.
 1994
 37 1 p. 220-222
3 p.
 article
4 A direct and accurate method for the extraction of diffusion length and surface recombination velocity from an EBIC line scan Ong, V.K.S.
 1994
 37 1 p. 1-7
7 p.
 article
5 AlGaAs/GaAs HBT collector optimization for high frequency performance Khrenov, G.
 1994
 37 1 p. 213-214
2 p.
 article
6 Analytical model of the effective recombination velocity of diffused p−p + (n−n +) high-low junctions at arbitrary injection level Bellone, Salvatore
 1994
 37 1 p. 83-92
10 p.
 article
7 Analytic expressions for the field dependent tunnelling attenuation factor in thin insulators Lavelle, S.W.
 1994
 37 1 p. 141-145
5 p.
 article
8 An efficient and accurate self-consistent calculation of electronic states in modulation doped heterostructures Abou-Elnour, Ali
 1994
 37 1 p. 27-30
4 p.
 article
9 A new experimental method (E-plot) to characterize the substrate-current and the saturation-voltage of fresh and hot-electron-damaged NMOSFETs Kim, Shi-Ho
 1994
 37 1 p. 198-200
3 p.
 article
10 A new intermediate state model for the GTO: Relation to the turn-off process Gribnikov, Z.
 1994
 37 1 p. 135-139
5 p.
 article
11 Annealing of gamma-irradiated Al-gate NMOS transistors Pejović, M.
 1994
 37 1 p. 215-216
2 p.
 article
12 A novel fabrication process and analytical model for Pt/GaAs Schottky barrier mixer diodes Krozer, V.
 1994
 37 1 p. 169-180
12 p.
 article
13 A self-consistent calculation of the small signal parameters for AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs Liu, Kuo-Wei
 1994
 37 1 p. 51-54
4 p.
 article
14 A simple trap-detrap model for accurate prediction of radiation induced threshold voltage shifts in radiation tolerant oxides for all static or time variant oxide fields Kimpton, Derek
 1994
 37 1 p. 153-158
6 p.
 article
15 A spectral analysis method to directly determine minority carrier generation lifetime using the pulsed MOS structure Xu, Mingzhen
 1994
 37 1 p. 31-36
6 p.
 article
16 Calculation of avalanche breakdown voltage of the InP P+-N junction Moon, Tae-Hun
 1994
 37 1 p. 187-188
2 p.
 article
17 Characterization and modeling of the n- and p-channel MOSFETs inversion-layer mobility in the range 25–125°C Huang, Cheng-Liang
 1994
 37 1 p. 97-103
7 p.
 article
18 Charge-control and mobility in Si delta-doped FETs grown by MBE Chen, Q.
 1994
 37 1 p. 105-109
5 p.
 article
19 CMOS on-chip electrostatic discharge protection circuit using four-SCR structures with low ESD-trigger voltage Ker, Ming-Dou
 1994
 37 1 p. 17-26
10 p.
 article
20 Collector-emitter offset voltage in InP/InGaAs single and double heterojunction bipolar transistors Ouacha, A.
 1994
 37 1 p. 201-203
3 p.
 article
21 Comparison of gate-edge effects on the hot-carrier induced degradation of LDD N- and P-channel MOSFETs Pan, Y.
 1994
 37 1 p. 77-82
6 p.
 article
22 Current switching and instability in a heterostructure hot electron diode Reklaitis, A.
 1994
 37 1 p. 147-152
6 p.
 article
23 Dependence of the activity efficiency of Mg-implanted into GaAs on the concentration of As doped into a-Si:H encapsulants Yokota, Katsuhiro
 1994
 37 1 p. 9-15
7 p.
 article
24 Determination of the fitting parameters for using uniform emitter and base doping profile in bipolar transistor modeling Liou, J.J.
 1994
 37 1 p. 183-186
4 p.
 article
25 Editorial Board 1994
 37 1 p. IFC-
1 p.
 article
26 Effect of RPT/furnace processing on the minority carrier lifetime in very thin oxide MOS capacitors Fonseca, L.
 1994
 37 1 p. 115-117
3 p.
 article
27 Effect of thickness and granular structure on the electrical conductivity of the active layer in polycrystalline silicon TFTs Sehil, H.
 1994
 37 1 p. 159-168
10 p.
 article
28 Fowler-Nordheim tunnelling current in an Mg/SiO2/Si MOS structure Sik, On Kong
 1994
 37 1 p. 45-49
5 p.
 article
29 Fowler-Nordheim tunnelling current in a yttrium/silicon dioxide/silicon MOS structure Kong, Sik On
 1994
 37 1 p. 189-191
3 p.
 article
30 Generalized piezoelectric scattering rate for electrons in a two-dimensional electron gas Stroscio, Michael A.
 1994
 37 1 p. 181-182
2 p.
 article
31 Monte-Carlo simulation of gate leakage current effect in P-channel GaAs/Al0.7Ga0.3As HIGFET Pankratov, V.
 1994
 37 1 p. 211-212
2 p.
 article
32 Novel characteristics of the polysilicon high-low-emitter (PHL-emitter) bipolar transistor—High current gain and zero activation energy Chang, Kun-Zen
 1994
 37 1 p. 93-96
4 p.
 article
33 Ohmic contacts of Au and Ag to p-GaSb Milnes, A.G.
 1994
 37 1 p. 37-44
8 p.
 article
34 On the dependence of cut-off frequency of a Schottky diode on epilayer doping Mukhopadhyay, S.
 1994
 37 1 p. 192-194
3 p.
 article
35 On the universal electric field dependence of the electron and hole effective mobility in MOS inversion layers Emrani, A.
 1994
 37 1 p. 111-113
3 p.
 article
36 Properties of Au-Ge ohmic contacts after the alloying process Skrabka, T.
 1994
 37 1 p. 195-197
3 p.
 article
37 Publisher's note 1994
 37 1 p. iii-
1 p.
 article
38 Resistivity profile measurements of proton-irradiated n-type silicon Keskitalo, Niclas
 1994
 37 1 p. 55-60
6 p.
 article
39 Study of tantalum-based diffusion barriers between Al and Si Wang, Wen-Chun
 1994
 37 1 p. 65-69
5 p.
 article
40 Subthreshold characteristics of a SiGe-channel PMOS device operating at 77 K Kuo, J.B.
 1994
 37 1 p. 204-206
3 p.
 article
41 Temperature dependence of forward current-voltage characteristics in a GaAs PiN structure with near-fully compensated i-region under low and high injection conditions Ashkinazi, G.
 1994
 37 1 p. 71-76
6 p.
 article
42 The double sweep HF-CV technique for generation lifetime determination in MOS capacitors Sorge, Roland
 1994
 37 1 p. 217-219
3 p.
 article
43 The effect of strain on the base resistance and transit time of ungraded and compositional-graded SiGe HBTs Rosenfeld, D.
 1994
 37 1 p. 119-126
8 p.
 article
44 Transconductance compression near subthreshold of GaAs floated electron channel field effect transistor Lee, Y.J.
 1994
 37 1 p. 207-210
4 p.
 article
                             44 results found
 
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