| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An analytical threshold voltage model for SiGe-channel PMOS devices
|
Kuo, J.B.
|
|
1993
|
36 |
9 |
p. 1349-1352
4 p.
|
artikel
|
| 2 |
A power semiconductor diode with an integrated forward-current sensor
|
Manduteanu, George V.
|
|
1993
|
36 |
9 |
p. 1335-1338
4 p.
|
artikel
|
| 3 |
A study of radiation effects on reoxidized nitrided oxide MOSFETs, including effects on mobility
|
Mallik, A.
|
|
1993
|
36 |
9 |
p. 1359-1361
3 p.
|
artikel
|
| 4 |
Call for papers
|
|
|
1993
|
36 |
9 |
p. V-VI
nvt p.
|
artikel
|
| 5 |
Comparative analysis of microwave noise in GaAs and AlGaAs/GaAs channels
|
Aninkevičius, V.
|
|
1993
|
36 |
9 |
p. 1339-1343
5 p.
|
artikel
|
| 6 |
Current fluctuations due to locally distributed charge generation in semiconductor junctions: A theoretical study
|
Niemcharoen, S.
|
|
1993
|
36 |
9 |
p. 1362-1364
3 p.
|
artikel
|
| 7 |
D.C. and transient analysis of a SiGe-base heterojunction bipolar device in an ECL buffer using a modified pisces program
|
Kuo, J.B.
|
|
1993
|
36 |
9 |
p. 1273-1276
4 p.
|
artikel
|
| 8 |
Demonstration of a Si/SiGe optoelectronic reset-set flip-flop based on an inversion-channel heterostructure
|
Vetter, A.
|
|
1993
|
36 |
9 |
p. 1247-1250
4 p.
|
artikel
|
| 9 |
Design of AlGaAs/GaAs quantum wells for electroabsorption modulators
|
Susa, Nobuhiko
|
|
1993
|
36 |
9 |
p. 1277-1287
11 p.
|
artikel
|
| 10 |
Effect of two-dimensional electron gas on the d.c. characteristics of InAlAs/InGaAs double heterojunction bipolar transistors
|
Huang, Chao-Hsing
|
|
1993
|
36 |
9 |
p. 1229-1234
6 p.
|
artikel
|
| 11 |
Electrical characterisation of a heterojunction field effect transistor photodetector (HFETPD)
|
Thompson, David
|
|
1993
|
36 |
9 |
p. 1295-1302
8 p.
|
artikel
|
| 12 |
Improved GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructure by growing double δ-doping GaAs layers on both sides of the channel
|
Shieh, H.M.
|
|
1993
|
36 |
9 |
p. 1235-1237
3 p.
|
artikel
|
| 13 |
Impurity profile extraction from semiconductor chips of cellular construction
|
Bulucea, Constantin
|
|
1993
|
36 |
9 |
p. 1239-1246
8 p.
|
artikel
|
| 14 |
Modeling of β-SiC MESFETs using hydrodynamic equations
|
Zhou, Jing-Rong
|
|
1993
|
36 |
9 |
p. 1289-1294
6 p.
|
artikel
|
| 15 |
Negative differential resistance of single barrier interband tunnelling diodes
|
Khrenov, G.
|
|
1993
|
36 |
9 |
p. 1325-1333
9 p.
|
artikel
|
| 16 |
Noise in diodes, rigorously deduced from first principles
|
De Vos, Alexis
|
|
1993
|
36 |
9 |
p. 1267-1271
5 p.
|
artikel
|
| 17 |
Numerical transient simulation of the programming window degradation in FLOTOX EEPROM cells
|
Papadas, C.
|
|
1993
|
36 |
9 |
p. 1303-1311
9 p.
|
artikel
|
| 18 |
Plasma etching antenna effect on oxide-silicon interface reliability
|
Shin, Hyungcheol
|
|
1993
|
36 |
9 |
p. 1356-1358
3 p.
|
artikel
|
| 19 |
Preparation of heterojunction solar cell
|
Vishwakarma, S.R.
|
|
1993
|
36 |
9 |
p. 1345-1348
4 p.
|
artikel
|
| 20 |
Process and material properties of WSi2 formed by discharge treatment
|
Singh, Awatar
|
|
1993
|
36 |
9 |
p. 1365-1367
3 p.
|
artikel
|
| 21 |
Reduced hot-carrier reliability degradation of x-ray irradiated MOSFETs in a 0.25 μm CMOS technology with ultra-thin gate oxide
|
Acovic, A.
|
|
1993
|
36 |
9 |
p. 1353-1355
3 p.
|
artikel
|
| 22 |
SiGe-base heterojunction bipolar transistors: An analytical current gain and forward transit time model
|
Lu, T.C.
|
|
1993
|
36 |
9 |
p. 1313-1320
8 p.
|
artikel
|
| 23 |
Silicon-implanted SiO2 for nonvolatile memory applications
|
Hao, Ming-Yin
|
|
1993
|
36 |
9 |
p. 1321-1324
4 p.
|
artikel
|
| 24 |
Software survey section
|
|
|
1993
|
36 |
9 |
p. I-III
nvt p.
|
artikel
|
| 25 |
Switch-off transient analysis for heterojunction bipolar transistors in saturation
|
Yuan, J.S.
|
|
1993
|
36 |
9 |
p. 1261-1266
6 p.
|
artikel
|
| 26 |
The effect of sidewall base injection on the a.c. base resistance of a bipolar transistor
|
Sadovnikov, A.D.
|
|
1993
|
36 |
9 |
p. 1368-1370
3 p.
|
artikel
|
| 27 |
Threshold voltage model for narrow width MOSFETs
|
Oh, Sung-Hun
|
|
1993
|
36 |
9 |
p. 1251-1260
10 p.
|
artikel
|
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