| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis and optimization of power MOSFETs for cryogenic operation
|
Singh, Ranbir
|
|
1993
|
36 |
8 |
p. 1203-1211
9 p.
|
artikel
|
| 2 |
An analytic model for punchthrough-implanted MOSFETs in strong inversion
|
Wong, Shyh-Chyi
|
|
1993
|
36 |
8 |
p. 1183-1195
13 p.
|
artikel
|
| 3 |
A new δ-doped InGaAs/GaAs pseudomorphic high electron mobility transistor utilizing a strained superlattice spacer
|
Shieh, H.M.
|
|
1993
|
36 |
8 |
p. 1117-1119
3 p.
|
artikel
|
| 4 |
A physical model of the transit time in bipolar transistors
|
Weng, J.
|
|
1993
|
36 |
8 |
p. 1197-1201
5 p.
|
artikel
|
| 5 |
A study of trapezoidal programming waveform for the FLOTOX EEPROM
|
Sik On Kong,
|
|
1993
|
36 |
8 |
p. 1093-1100
8 p.
|
artikel
|
| 6 |
A tristate switching device with double delta-doped quantum well structure
|
Hsu, Wei-Chou
|
|
1993
|
36 |
8 |
p. 1089-1092
4 p.
|
artikel
|
| 7 |
Composition grading for base transit time minimization in SiGe-base heterojunction bipolar transistors
|
Winterton, S.S.
|
|
1993
|
36 |
8 |
p. 1161-1164
4 p.
|
artikel
|
| 8 |
Contribution of bulk states to the depletion layer admittance
|
Dhariwal, S.R.
|
|
1993
|
36 |
8 |
p. 1165-1174
10 p.
|
artikel
|
| 9 |
Current transport mechanisms studied by I-V-T and IR photoemission measurements on a P-doped PtSi Schottky diode
|
Chin, V.W.L.
|
|
1993
|
36 |
8 |
p. 1107-1116
10 p.
|
artikel
|
| 10 |
Deep-depletion-layer impact-ionization-induced gate-oxide breakdown in thin-oxide n-MOSFETs
|
Huang, M.Q.
|
|
1993
|
36 |
8 |
p. 1155-1160
6 p.
|
artikel
|
| 11 |
Dielectric response of p-n junctions
|
Jonscher, Andrew K.
|
|
1993
|
36 |
8 |
p. 1121-1128
8 p.
|
artikel
|
| 12 |
Dynamic properties of an AlGaAs/GaAs double heterojunction thyristor
|
Willén, B.
|
|
1993
|
36 |
8 |
p. 1225-1227
3 p.
|
artikel
|
| 13 |
Effect of wafer stress on surface photovoltage diffusion length measurements
|
Hwang, I.G.
|
|
1993
|
36 |
8 |
p. 1147-1153
7 p.
|
artikel
|
| 14 |
Enhanced current driving capability GaAs/graded In x Ga1−x As/GaAs high electron mobility transistor
|
Hsu, R.T.
|
|
1993
|
36 |
8 |
p. 1143-1146
4 p.
|
artikel
|
| 15 |
Impact of the emitter and base diffusion capacitances on the a.c. behavior of bipolar transistors
|
Hamel, John Starr
|
|
1993
|
36 |
8 |
p. 1175-1182
8 p.
|
artikel
|
| 16 |
Kink effect on the base current of heterojunction bipolar transistors
|
Liou, J.J.
|
|
1993
|
36 |
8 |
p. 1222-1224
3 p.
|
artikel
|
| 17 |
Minority carrier accumulation at high-low junctions
|
in't Hout, S.R.
|
|
1993
|
36 |
8 |
p. 1135-1142
8 p.
|
artikel
|
| 18 |
Modeling the avalanche multiplication current of AlGaAs/GaAs heterojunction bipolar transistors
|
Liou, J.J.
|
|
1993
|
36 |
8 |
p. 1217-1221
5 p.
|
artikel
|
| 19 |
Non-destructive characterisation of SOI wafers using spectroscopic reflectrometry
|
Smeys, P.
|
|
1993
|
36 |
8 |
p. 1213-1216
4 p.
|
artikel
|
| 20 |
Photoluminescence of undoped and Er-doped 1.1-μm InGaAsP layers grown by liquid-phase epitaxy
|
Chiu, Cheng-Ming
|
|
1993
|
36 |
8 |
p. 1101-1106
6 p.
|
artikel
|
| 21 |
Saturation transconductance of deep-submicron-channel MOSFETs
|
Taur, Y.
|
|
1993
|
36 |
8 |
p. 1085-1087
3 p.
|
artikel
|
| 22 |
Software survey section
|
|
|
1993
|
36 |
8 |
p. I-IV
nvt p.
|
artikel
|
| 23 |
The influence of bandgap narrowing on the I–V characteristics of a MOSFET
|
Jakubowski, A.
|
|
1993
|
36 |
8 |
p. 1129-1134
6 p.
|
artikel
|
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