| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A compact bipolar transistor model for very-high-frequency applications with special regard to narrow emitter stripes and high current densities
|
Koldehoff, A.
|
|
1993
|
36 |
7 |
p. 1035-1048
14 p.
|
artikel
|
| 2 |
Analysis of I-V measurements on CrSi2Si Schottky structures in a wide temperature range
|
Barus, Miroslav
|
|
1993
|
36 |
7 |
p. 969-974
6 p.
|
artikel
|
| 3 |
Conservation equations for hot carriers—II. Dynamic features
|
Gružinskis, V.
|
|
1993
|
36 |
7 |
p. 1067-1075
9 p.
|
artikel
|
| 4 |
Conservation equations for hot carriers—I. Transport models
|
Gružinskis, V.
|
|
1993
|
36 |
7 |
p. 1055-1066
12 p.
|
artikel
|
| 5 |
Current transport and its effect on the determination of the Schottky-barrier height in a typical system: Gold on silicon
|
Chen, T.P.
|
|
1993
|
36 |
7 |
p. 949-954
6 p.
|
artikel
|
| 6 |
Effect of annealing and plasma precleaning on the electrical properties of N2O/SiH4 PECVD oxide as gate material in MOSFETs and CCDs
|
Chanana, R.K.
|
|
1993
|
36 |
7 |
p. 1021-1026
6 p.
|
artikel
|
| 7 |
Electron and hole traps in heavily compensated InGaAs/GaAs heterostructures
|
Buchwald, W.R.
|
|
1993
|
36 |
7 |
p. 1077-1082
6 p.
|
artikel
|
| 8 |
Experimental application of a novel technique to extract gate bias dependent source and drain parasitic resistances of GaAs MESFETs
|
Menozzi, Roberto
|
|
1993
|
36 |
7 |
p. 1083-1084
2 p.
|
artikel
|
| 9 |
Fabrication methods for an AlGaAs/InGaP/AlGaAs visible laser with transverse junction stripe structure grown by liquid phase epitaxy
|
Chang, L.B.
|
|
1993
|
36 |
7 |
p. 1049-1054
6 p.
|
artikel
|
| 10 |
Injection current in a planar doped base Si bipolar junction transistor
|
Jorke, H.
|
|
1993
|
36 |
7 |
p. 975-979
5 p.
|
artikel
|
| 11 |
Investigation of the kink and hysteresis from 13 K to 30 K in N-channel CMOS transistors with a floating well
|
Kasley, Kathy L.
|
|
1993
|
36 |
7 |
p. 945-948
4 p.
|
artikel
|
| 12 |
Low-frequency noise characteristics of lightly-doped-drain MOSFETs
|
Jang, Sheng-Lyang
|
|
1993
|
36 |
7 |
p. 1007-1010
4 p.
|
artikel
|
| 13 |
Numerical analysis of small-signal characteristics of a fully depleted SOI MOSFET
|
Yang, P.C.
|
|
1993
|
36 |
7 |
p. 939-944
6 p.
|
artikel
|
| 14 |
On the carrier removal phenomenon in silicon after proton irradiation
|
Gopal, R.
|
|
1993
|
36 |
7 |
p. 1011-1019
9 p.
|
artikel
|
| 15 |
Photoelectrical properties of Au/GaAs(1−x)Sx/Mo structures as a function of sulfur concentration
|
Lalande, Frédéric
|
|
1993
|
36 |
7 |
p. 981-984
4 p.
|
artikel
|
| 16 |
Semi-analytical model for charge control in SiGe quantum well MOS structures
|
Bhaumik, Kaushik
|
|
1993
|
36 |
7 |
p. 961-968
8 p.
|
artikel
|
| 17 |
Small-signal non-quasi-static model for single and double heterojunction bipolar transistors
|
Huang, Jeffrey C.-N.
|
|
1993
|
36 |
7 |
p. 1027-1034
8 p.
|
artikel
|
| 18 |
Software survey section
|
|
|
1993
|
36 |
7 |
p. I-IV
nvt p.
|
artikel
|
| 19 |
Spatially transient hot electron distributions in silicon determined from the chambers path integral solution of the Boltzmann transport equation
|
Leung, C.C.C.
|
|
1993
|
36 |
7 |
p. 1001-1006
6 p.
|
artikel
|
| 20 |
Study of lateral non-uniformity as a function of junction depth in ultra-shallow junctions and its effect on leakage behavior in as-deposited polycrystalline Si and amorphous Si diodes
|
Batra, Shubneesh
|
|
1993
|
36 |
7 |
p. 955-960
6 p.
|
artikel
|
| 21 |
Theory of surface photovoltage in a semiconductor with deep impurities
|
Choo, S.C.
|
|
1993
|
36 |
7 |
p. 989-999
11 p.
|
artikel
|
| 22 |
Use of empirically deduced composition and temperature dependent intrinsic carrier density in Si1−xGex, In1−xGaxAs and In1−xGaxAsyP1−y in calculating minimum capacitance in C-V plot of MIS structure
|
Paul, Sajal K.
|
|
1993
|
36 |
7 |
p. 985-988
4 p.
|
artikel
|
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