| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A fully analytical low-temperature forward-transit-time model for bipolar devices operating at 77 K
|
Kuo, J.B.
|
|
1993
|
36 |
6 |
p. 917-921
5 p.
|
artikel
|
| 2 |
A generalized Legendre polynomial/sparse matrix approach for determining the distribution function in non-polar semiconductors
|
Hennacy, Kenneth A.
|
|
1993
|
36 |
6 |
p. 869-877
9 p.
|
artikel
|
| 3 |
AlGaAs heterojunction phototransistor with spectral-response controllability
|
Zhu, Yu
|
|
1993
|
36 |
6 |
p. 923-926
4 p.
|
artikel
|
| 4 |
Analytical low-frequency 1/f noise model for lightly-doped-drain MOSFETs operating in the linear region
|
Jang, Sheng-Lyang
|
|
1993
|
36 |
6 |
p. 899-903
5 p.
|
artikel
|
| 5 |
An analytical model for current transport in AlGaAs/GaAs abrupt HBTs with a setback layer
|
Liou, J.J.
|
|
1993
|
36 |
6 |
p. 819-825
7 p.
|
artikel
|
| 6 |
Editorial announcement
|
|
|
1993
|
36 |
6 |
p. iii-
1 p.
|
artikel
|
| 7 |
Editorial: Software survey section
|
|
|
1993
|
36 |
6 |
p. I-III
nvt p.
|
artikel
|
| 8 |
Emitter-length design for microwave power heterojunction bipolar transistors
|
Liu, William
|
|
1993
|
36 |
6 |
p. 885-890
6 p.
|
artikel
|
| 9 |
Gallium antimonide device related properties
|
Milnes, A.G.
|
|
1993
|
36 |
6 |
p. 803-818
16 p.
|
artikel
|
| 10 |
Influence of sulfur concentration on the current-voltage characteristics of Au/GaAs(1-x)S x /Mo structures
|
Sogoyou, Békeyi
|
|
1993
|
36 |
6 |
p. 927-932
6 p.
|
artikel
|
| 11 |
Intervalley scattering in the quasi-two-dimensional-electron gas of a 〈 100 〉 p-Si inversion layer
|
Magnus, W.
|
|
1993
|
36 |
6 |
p. 843-849
7 p.
|
artikel
|
| 12 |
Low temperature R db measurements and simulations for Si npn transistors
|
Nguyen, P.T.
|
|
1993
|
36 |
6 |
p. 933-935
3 p.
|
artikel
|
| 13 |
Majority carrier mobility in ultra heavily doped n-type Si in the presence of defects and dislocations
|
Živanov, M.B.
|
|
1993
|
36 |
6 |
p. 891-898
8 p.
|
artikel
|
| 14 |
Modelling of the electronic structure for an AlGaAs/GaAs/AlGaAs HFET with a δ-doping layer inside the quantum well
|
Trott, S.
|
|
1993
|
36 |
6 |
p. 851-856
6 p.
|
artikel
|
| 15 |
Numerical simulation of non-homogeneous submicron semiconductor devices by a deterministic particle method
|
Mustieles, F.J.
|
|
1993
|
36 |
6 |
p. 857-868
12 p.
|
artikel
|
| 16 |
RELY: A physics-based CAD tool for predicting time-dependent hot-electron induced degradation in MOSFET's
|
Wang, Shiuh-Luen
|
|
1993
|
36 |
6 |
p. 833-841
9 p.
|
artikel
|
| 17 |
Simple method for the determination of the interface trap density at 77 K in fully depleted accumulation mode SOI MOSFETs
|
Martino, J.A.
|
|
1993
|
36 |
6 |
p. 827-832
6 p.
|
artikel
|
| 18 |
Study of cleaved metal-InP (n) contacts
|
Barret, C.
|
|
1993
|
36 |
6 |
p. 879-884
6 p.
|
artikel
|
| 19 |
The influence of the surface and oxide charge on the surface recombination process
|
Otaredian, T.
|
|
1993
|
36 |
6 |
p. 905-915
11 p.
|
artikel
|
| 20 |
Two types of interface traps induced by hot-carrier stressing in MOSFETs
|
Das, N.C.
|
|
1993
|
36 |
6 |
p. 936-938
3 p.
|
artikel
|
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