| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accumulation-type vs inversion-type ultra-thin SOI PMOS devices operating at 300 and 77 K: Subthreshold behavior and pull-up switching performance of a CMOS inverter
|
Kuo, J.B.
|
|
1993
|
36 |
5 |
p. 793-797
5 p.
|
artikel
|
| 2 |
Acousto-electric deep-level transient spectroscopy in semiconductors
|
Abbate, A.
|
|
1993
|
36 |
5 |
p. 697-703
7 p.
|
artikel
|
| 3 |
Analysis and simulation of the frequency response of MOSFETs with uniform and/or local oxide degradation
|
Haddara, H.
|
|
1993
|
36 |
5 |
p. 741-748
8 p.
|
artikel
|
| 4 |
Analysis of current-voltage characteristics of fully depleted SOI MOSFETs
|
Yang, P.C.
|
|
1993
|
36 |
5 |
p. 685-692
8 p.
|
artikel
|
| 5 |
Analytical modeling of threshold voltages in p-channel Si/SiGe/Si MOS structures
|
Iniewski, K.
|
|
1993
|
36 |
5 |
p. 775-783
9 p.
|
artikel
|
| 6 |
A study of titanium silicide formation by multiple arsenic-ion-implantation
|
Chen, P.C.
|
|
1993
|
36 |
5 |
p. 705-709
5 p.
|
artikel
|
| 7 |
Calculation of the collector signal delay time of HBT's based on a piecewise-linear velocity profile
|
Liou, J.J.
|
|
1993
|
36 |
5 |
p. 693-696
4 p.
|
artikel
|
| 8 |
Characterization of a defect layer at a Schottky barrier interface by current and capacitance measurements
|
Cola, A.
|
|
1993
|
36 |
5 |
p. 785-789
5 p.
|
artikel
|
| 9 |
Characterization of MOVPE grown ZnSe on GaAs using Schottky-diodes
|
Heuken, M.
|
|
1993
|
36 |
5 |
p. 761-766
6 p.
|
artikel
|
| 10 |
Current-voltage characteristics of lattice-mismatched GaInAs(n +)/GaAs(p) diodes including thermal annealing effects
|
Huang, Z.C.
|
|
1993
|
36 |
5 |
p. 767-773
7 p.
|
artikel
|
| 11 |
Determination of doping concentration and interface charges for thin film SOI MOSFETs
|
Park, Sung-Kye
|
|
1993
|
36 |
5 |
p. 735-740
6 p.
|
artikel
|
| 12 |
Editorial: Software survey section
|
|
|
1993
|
36 |
5 |
p. I-III
nvt p.
|
artikel
|
| 13 |
Effects of the clock voltage waveforms on the charge transfer inefficiency of high-speed charge-coupled devices
|
Chen, L.
|
|
1993
|
36 |
5 |
p. 798-800
3 p.
|
artikel
|
| 14 |
Furnace N2O oxidation process for submicron MOSFET device applications
|
Hwang, Hyunsang
|
|
1993
|
36 |
5 |
p. 749-751
3 p.
|
artikel
|
| 15 |
Interface characterization of fully depleted SOI MOSFETs by a threshold-voltage method
|
Yang, P.C.
|
|
1993
|
36 |
5 |
p. 801-802
2 p.
|
artikel
|
| 16 |
Monte Carlo study of a 50 nm-dual-gate HEMT providing against short-channel effects
|
Dollfus, P.
|
|
1993
|
36 |
5 |
p. 711-715
5 p.
|
artikel
|
| 17 |
On the influence of sputter etch cleaning on the silicidation, the thermal stability and the electrical characteristics of Ti/p−Si contacts
|
Vercaemst, A.S.
|
|
1993
|
36 |
5 |
p. 753-759
7 p.
|
artikel
|
| 18 |
Optical effects on the current-voltage characteristics of lightly doped drain silicon MOSFETs
|
Jang, Sheng-Lyang
|
|
1993
|
36 |
5 |
p. 727-734
8 p.
|
artikel
|
| 19 |
Power law model for positive charge build-up in silicon dioxide due to high-field stressing
|
Patrikar, R.M.
|
|
1993
|
36 |
5 |
p. 723-726
4 p.
|
artikel
|
| 20 |
Precision, accuracy, uncertainty and traceability and their application to submicrometer dimensional metrology
|
Larrabee, Robert D.
|
|
1993
|
36 |
5 |
p. 673-684
12 p.
|
artikel
|
| 21 |
Simple model of diamond depletion-type MOSFET
|
Gildenblat, G.
|
|
1993
|
36 |
5 |
p. 791-792
2 p.
|
artikel
|
| 22 |
The delayed-turn-on behavior in the accumulation-type SOI PMOS device operating at 77 K
|
Kuo, J.B.
|
|
1993
|
36 |
5 |
p. 717-721
5 p.
|
artikel
|
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