| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A d.c. intrinsic base resistance model considering resistivity modulation for arbitrarily doped transistors
|
Waters, Jeffrey W.
|
|
1993
|
36 |
4 |
p. 563-568
6 p.
|
artikel
|
| 2 |
Analysis of drain breakdown voltage in enhancement-mode SOI MOSFETs
|
Smeys, P.
|
|
1993
|
36 |
4 |
p. 569-573
5 p.
|
artikel
|
| 3 |
Analytical and numerical studies of the dependence of high frequency performance on the use of a polysilicon emitter in bipolar transistors
|
Chor, E.F.
|
|
1993
|
36 |
4 |
p. 553-562
10 p.
|
artikel
|
| 4 |
Analytical modeling of MOSFET conductance parameters at cryogenic temperatures
|
Srivastava, A.
|
|
1993
|
36 |
4 |
p. 519-525
7 p.
|
artikel
|
| 5 |
A new stable method for linearization of discretized basic semiconductor equations
|
Obrecht, M.S.
|
|
1993
|
36 |
4 |
p. 643-648
6 p.
|
artikel
|
| 6 |
A phenomenological model of γ-irradiated MOSFETs
|
Grigorov, K.G.
|
|
1993
|
36 |
4 |
p. 667-668
2 p.
|
artikel
|
| 7 |
A study of latch-up hysteresis in n-well CMOS by means of I–V characteristics and photoemission techniques
|
Chen, Ming-Jer
|
|
1993
|
36 |
4 |
p. 539-545
7 p.
|
artikel
|
| 8 |
Band offsets in GaSb/AlGaAsSb: Correlation with the Schottky barrier height and the depth of native acceptors
|
Polyakov, A.Y.
|
|
1993
|
36 |
4 |
p. 649-651
3 p.
|
artikel
|
| 9 |
Base pushout effect on collector signal delay and early voltage for heterojunction bipolar transistors
|
Yuan, J.S.
|
|
1993
|
36 |
4 |
p. 657-660
4 p.
|
artikel
|
| 10 |
Comparison of heterojunction bipolar transistors in stripe and dot geometries
|
Liu, William
|
|
1993
|
36 |
4 |
p. 495-500
6 p.
|
artikel
|
| 11 |
Correction factor in the split C–V method for mobility measurements
|
Huang, C.-L.
|
|
1993
|
36 |
4 |
p. 611-615
5 p.
|
artikel
|
| 12 |
Current characteristics of polycrystalline thin-film transistors using sputtered silicon films
|
Tong, K.Y.
|
|
1993
|
36 |
4 |
p. 513-517
5 p.
|
artikel
|
| 13 |
Dielectric degradation of Pt/SiO2/Si structures during thermal annealing
|
Tsui, Bing-Yue
|
|
1993
|
36 |
4 |
p. 583-593
11 p.
|
artikel
|
| 14 |
Dynamic device degradation during hot-carrier stress in DDD n-MOSFETs
|
Chen, S.L.
|
|
1993
|
36 |
4 |
p. 501-511
11 p.
|
artikel
|
| 15 |
Editorial: Software survey section
|
|
|
1993
|
36 |
4 |
p. I-III
nvt p.
|
artikel
|
| 16 |
Effects of minority-carrier ballistic transport on the collector current of submicron BJT's
|
Liou, J.J.
|
|
1993
|
36 |
4 |
p. 655-656
2 p.
|
artikel
|
| 17 |
Frequency dependence of forward capacitance-voltage characteristics of Schottky barrier diodes
|
Chattopadhyay, P.
|
|
1993
|
36 |
4 |
p. 605-610
6 p.
|
artikel
|
| 18 |
Growth and characterization of MBE-grown thin films of InSb on Si
|
Lu, H.C.
|
|
1993
|
36 |
4 |
p. 533-538
6 p.
|
artikel
|
| 19 |
Hot-carrier degradation of nMOSTs stressed at 4.2 K
|
Simoen, E.
|
|
1993
|
36 |
4 |
p. 527-532
6 p.
|
artikel
|
| 20 |
Hot-carrier reliability characteristics of narrow-width MOSFETs
|
Hwang, Hyunsang
|
|
1993
|
36 |
4 |
p. 665-666
2 p.
|
artikel
|
| 21 |
Lumped series resistance of solar cells as a result of distributed sheet resistance
|
Sokolić, Saša
|
|
1993
|
36 |
4 |
p. 623-630
8 p.
|
artikel
|
| 22 |
Measurement of minority-carrier diffusion length and composition of AlxGa1−xAs alloys by a microwave contactless method
|
Wang, Zong-xin
|
|
1993
|
36 |
4 |
p. 669-671
3 p.
|
artikel
|
| 23 |
New spice model of total base resistance in bipolar transistors
|
Naimi, A.
|
|
1993
|
36 |
4 |
p. 639-641
3 p.
|
artikel
|
| 24 |
Novel AlGaAs/GaAs heterojunction bipolar transistors fabricated by two-stage molecular beam epitaxy
|
Chen, H.R.
|
|
1993
|
36 |
4 |
p. 485-487
3 p.
|
artikel
|
| 25 |
Recalculation of Irvin's resistivity curves for diffused layers in silicon using updated bulk resistivity data
|
Bulucea, Constantin
|
|
1993
|
36 |
4 |
p. 489-493
5 p.
|
artikel
|
| 26 |
Study of the electrostatic potential in a finite semiconductor layer at equilibrium
|
Fournet, G.
|
|
1993
|
36 |
4 |
p. 595-603
9 p.
|
artikel
|
| 27 |
Substrate-bias-dependent threshold-voltage model of short-channel MOSFET
|
Khanna, Manoj K.
|
|
1993
|
36 |
4 |
p. 661-664
4 p.
|
artikel
|
| 28 |
Temperature dependence of base-current reversals and breakdown characteristics of n-p-n transistors
|
Jang, Sheng-Lyang
|
|
1993
|
36 |
4 |
p. 617-621
5 p.
|
artikel
|
| 29 |
The influence of low-temperature BJT current gain and forward transit time on the switching behavior in an ECL circuit operating at 77 K
|
Lu, T.C.
|
|
1993
|
36 |
4 |
p. 652-654
3 p.
|
artikel
|
| 30 |
Transconductances of the long-channel silicon-on-insulator MOSFET
|
Ortiz-Conde, A.
|
|
1993
|
36 |
4 |
p. 631-637
7 p.
|
artikel
|
| 31 |
Two-dimensional computer analysis of GaAs MESFETs
|
Dong, Xiaoqi
|
|
1993
|
36 |
4 |
p. 547-552
6 p.
|
artikel
|
| 32 |
Two-dimensional MOSFET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation
|
Gnudi, A.
|
|
1993
|
36 |
4 |
p. 575-581
7 p.
|
artikel
|
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