| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A 1 f noise model based on fluctuating defect states
|
Borrello, Sebastian
|
|
1993
|
36 |
3 |
p. 407-410
4 p.
|
artikel
|
| 2 |
A globally convergent method for solving the energy balance equation in device simulation
|
Lin, Qi
|
|
1993
|
36 |
3 |
p. 411-419
9 p.
|
artikel
|
| 3 |
An approach to determine the small-signal equivalent circuit of sub-μm GaAs MESFETs including effects of nonstationary electron dynamics
|
Feng, Yu-Kun
|
|
1993
|
36 |
3 |
p. 443-453
11 p.
|
artikel
|
| 4 |
An experimental procedure for measuring silicon lattice heating due to hot carriers in MOSFETs
|
Roberts, James W.
|
|
1993
|
36 |
3 |
p. 351-360
10 p.
|
artikel
|
| 5 |
A simple expression for ECL propagation delay including non-quasi-static effects
|
McGregor, J.M.
|
|
1993
|
36 |
3 |
p. 391-396
6 p.
|
artikel
|
| 6 |
A survey of the present status of vacuum microelectronics
|
Iannazzo, S.
|
|
1993
|
36 |
3 |
p. 301-320
20 p.
|
artikel
|
| 7 |
A system of mixed device-circuit modeling for personal computers
|
Philatov, N.I.
|
|
1993
|
36 |
3 |
p. 463-473
11 p.
|
artikel
|
| 8 |
A theoretical analysis of millimeter-wave GaAs/AlGaAs multiquantum well transit time devices by the lucky drift model
|
Meng, C.C.
|
|
1993
|
36 |
3 |
p. 435-442
8 p.
|
artikel
|
| 9 |
Calculation of critical-layer-thickness and strain relaxation in GexSi1−x strained layers with interacting 60 and 90° dislocations
|
Jain, Uma
|
|
1993
|
36 |
3 |
p. 331-337
7 p.
|
artikel
|
| 10 |
Capacitance-voltage characteristics of a metal-carbon-silicon structure
|
Chan, K.K.
|
|
1993
|
36 |
3 |
p. 345-349
5 p.
|
artikel
|
| 11 |
Characteristics of InAs/AlxGa1−xSb/InAs tunnel diodes
|
Nag, B.R.
|
|
1993
|
36 |
3 |
p. 373-379
7 p.
|
artikel
|
| 12 |
Characterization of AlN/n-GaAs heterointerfaces determined by energy-resolved correlation DLTS
|
Li, Xin
|
|
1993
|
36 |
3 |
p. 381-385
5 p.
|
artikel
|
| 13 |
Characterization of molecular beam epitaxially grown InSb layers and diode structures
|
Lee, G.S.
|
|
1993
|
36 |
3 |
p. 387-389
3 p.
|
artikel
|
| 14 |
Co-implantation of Mg and Si in GaAs MESFETs
|
Kuzmik, J.
|
|
1993
|
36 |
3 |
p. 427-430
4 p.
|
artikel
|
| 15 |
DLTS evaluation of nonexponential transients of defect levels in cuprous oxide (Cu2O)
|
Papadimitriou, L.
|
|
1993
|
36 |
3 |
p. 431-434
4 p.
|
artikel
|
| 16 |
Editorial: Software survey section
|
|
|
1993
|
36 |
3 |
p. I-III
nvt p.
|
artikel
|
| 17 |
High barrier height Au/n-type InP Schottky contacts with a POxNyHz interfacial layer
|
Dang Tran Quan,
|
|
1993
|
36 |
3 |
p. 339-344
6 p.
|
artikel
|
| 18 |
Improved analytic MODFET charge-control model
|
George, G.
|
|
1993
|
36 |
3 |
p. 481-482
2 p.
|
artikel
|
| 19 |
Minority charge storage characteristics of HBTs in saturation
|
Mazhari, B.
|
|
1993
|
36 |
3 |
p. 455-461
7 p.
|
artikel
|
| 20 |
Modeling two-dimensional effects on base and collector currents in narrow-emitter self-aligned bipolar transistors
|
Rinaldi, Niccoló
|
|
1993
|
36 |
3 |
p. 397-405
9 p.
|
artikel
|
| 21 |
Modified differential open-circuit-voltage decay method for lifetime measurement in p-n junctions
|
Dhariwal, S.R.
|
|
1993
|
36 |
3 |
p. 421-426
6 p.
|
artikel
|
| 22 |
Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary condition
|
Yang, Kyounghoon
|
|
1993
|
36 |
3 |
p. 321-330
10 p.
|
artikel
|
| 23 |
The effect of hot-electron injection on the properties of flicker noise in n-channel MOSFETs
|
Cheng, Ching-Ho
|
|
1993
|
36 |
3 |
p. 475-479
5 p.
|
artikel
|
| 24 |
Thyristor turn off using MOS controlled current interruption
|
Huang, Qin
|
|
1993
|
36 |
3 |
p. 361-371
11 p.
|
artikel
|
| 25 |
Voltage dependence of trap-generated 1 f noise in MESFETs
|
Folkes, P.A.
|
|
1993
|
36 |
3 |
p. 483-484
2 p.
|
artikel
|
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