| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A computer model for inter-electrode capacitance-voltage characteristics of an a-Si:H TFT
|
Choi, Jong S.
|
|
1993
|
36 |
2 |
p. 223-228
6 p.
|
artikel
|
| 2 |
Analysis of microwave scattering from semiconductor wafers
|
Otaredian, T.
|
|
1993
|
36 |
2 |
p. 163-172
10 p.
|
artikel
|
| 3 |
An analytical expression for sheet carrier concentration vs gate voltage for HEMT modelling
|
DasGupta, Nandita
|
|
1993
|
36 |
2 |
p. 201-203
3 p.
|
artikel
|
| 4 |
Current and number fluctuations in submicron n + nn + structures
|
Varani, Luca
|
|
1993
|
36 |
2 |
p. 251-261
11 p.
|
artikel
|
| 5 |
Current-voltage characteristics of Si bipolar junction transistors operating in the cut-off mode
|
Jang, Sheng-Lyang
|
|
1993
|
36 |
2 |
p. 291-292
2 p.
|
artikel
|
| 6 |
Dynamic simulation of electron trapping and device lifetime of LDDnMOSFET
|
Lin, Jian-Yang
|
|
1993
|
36 |
2 |
p. 297-299
3 p.
|
artikel
|
| 7 |
Effects of oxygen implantation in GaAs
|
He, L.
|
|
1993
|
36 |
2 |
p. 173-178
6 p.
|
artikel
|
| 8 |
Energy distribution of interface state density in AlN/n-GaAs heterostructures formed by laser chemical vapor deposition
|
Li, Xin
|
|
1993
|
36 |
2 |
p. 279-284
6 p.
|
artikel
|
| 9 |
Formulation of the Boltzmann equation in terms of scattering matrices
|
Alam, Muhammad A.
|
|
1993
|
36 |
2 |
p. 263-271
9 p.
|
artikel
|
| 10 |
Generalized steady state diode equation: The state equations approach
|
Dosluoglu, T.
|
|
1993
|
36 |
2 |
p. 273-277
5 p.
|
artikel
|
| 11 |
High current gain AlGaAs/GaAs heterojunction bipolar transistor grown by molecular beam epitaxy
|
Huang, Chen-Chih
|
|
1993
|
36 |
2 |
p. 197-200
4 p.
|
artikel
|
| 12 |
Investigation of the uniformity of ohmic contacts to n-type GaAs formed by rapid thermal processing
|
Zhou, W.Y.
|
|
1993
|
36 |
2 |
p. 295-296
2 p.
|
artikel
|
| 13 |
Low-frequency current and intensity noise in AlGaAs laser diodes
|
Jang, Sheng-Lyang
|
|
1993
|
36 |
2 |
p. 189-196
8 p.
|
artikel
|
| 14 |
Low frequency oscillations in GaAs MESFETs
|
Abdala, M.A.
|
|
1993
|
36 |
2 |
p. 237-245
9 p.
|
artikel
|
| 15 |
Metal/n-InP interfaces studied by photoreflectance and Raman spectroscopies
|
Shi, Z.Q.
|
|
1993
|
36 |
2 |
p. 147-151
5 p.
|
artikel
|
| 16 |
Modeling the transient response of channel-substrate interface traps to gate voltage steps in GaAs FETs
|
Sengouga, N.
|
|
1993
|
36 |
2 |
p. 229-236
8 p.
|
artikel
|
| 17 |
Monte Carlo analysis of band structure influence on impact ionization in InP
|
Chandramouli, V.
|
|
1993
|
36 |
2 |
p. 285-290
6 p.
|
artikel
|
| 18 |
Multiple proton energy irradiation for improved GTO thyristors
|
Hallén, Anders
|
|
1993
|
36 |
2 |
p. 133-141
9 p.
|
artikel
|
| 19 |
Normalized expression of the frequency response of p-i-n avalanche photodiodes
|
Riesz, Ferenc
|
|
1993
|
36 |
2 |
p. 293-294
2 p.
|
artikel
|
| 20 |
On the common-emitter breakdown voltage of bipolar junction transistors
|
Jang, Sheng-Lyang
|
|
1993
|
36 |
2 |
p. 213-216
4 p.
|
artikel
|
| 21 |
Removal of native oxide from silicon surfaces of a-SiN x /Si devices using high pressure hydrogen plasma
|
Dutta, Achyut Kumar
|
|
1993
|
36 |
2 |
p. 247-249
3 p.
|
artikel
|
| 22 |
Separate contactless measurement of the bulk lifetime and the surface recombination velocity by the harmonic optical generation of the excess carriers
|
Otaredian, T.
|
|
1993
|
36 |
2 |
p. 153-162
10 p.
|
artikel
|
| 23 |
Series expansion of the Fermi-Dirac integral F j(x) over the entire domain of real j and x
|
Goano, Michele
|
|
1993
|
36 |
2 |
p. 217-221
5 p.
|
artikel
|
| 24 |
Software survey section
|
|
|
1993
|
36 |
2 |
p. I-IV
nvt p.
|
artikel
|
| 25 |
Spreading resistance of a round ohmic contact
|
Gelmont, Boris
|
|
1993
|
36 |
2 |
p. 143-146
4 p.
|
artikel
|
| 26 |
Strain fields due to differential dilatation at metal/semiconductor contacts and resulting piezoelectrical fields in GaAs
|
Farvacque, J.L.
|
|
1993
|
36 |
2 |
p. 205-211
7 p.
|
artikel
|
| 27 |
Theoretical calculations of temperature and current profiles in multi-finger heterojunction bipolar transistors
|
Liu, William
|
|
1993
|
36 |
2 |
p. 125-132
8 p.
|
artikel
|
| 28 |
“Universal” effective mobility of empirical local mobility models for n- and p-channel silicon MOSFETs
|
Wong, Hon-Sum
|
|
1993
|
36 |
2 |
p. 179-188
10 p.
|
artikel
|
| 29 |
Use of finite gate widths in multipoint correlation methods for DLTS characterization of semiconductors
|
G., A.Avila
|
|
1993
|
36 |
2 |
p. 119-124
6 p.
|
artikel
|
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