| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A closed-form model for electrostatic discharge thermal runaway in semiconductor devices
|
Choi, Hyek H.
|
|
1993
|
36 |
11 |
p. 1511-1514
4 p.
|
artikel
|
| 2 |
A comprehensive non-quasi-static capacitance model for graded heterojunction bipolar transistors
|
Huang, Jeffrey C.-N.
|
|
1993
|
36 |
11 |
p. 1583-1592
10 p.
|
artikel
|
| 3 |
Analysis of self-aligned MOSFETs with modulation-doped SiGe channels
|
Jain, F.
|
|
1993
|
36 |
11 |
p. 1613-1618
6 p.
|
artikel
|
| 4 |
Analysis of the effective doping distribution in the emitter of silicon bipolar transistors from 77 to 400 K
|
Zheng, Jiang
|
|
1993
|
36 |
11 |
p. 1636-1638
3 p.
|
artikel
|
| 5 |
An efficient Monte Carlo device simulation code based on rigorous application of internal scattering
|
Konijn, P.
|
|
1993
|
36 |
11 |
p. 1579-1581
3 p.
|
artikel
|
| 6 |
An explanation of 1 f noise in LDD MOSFETs from the ohmic region to saturation
|
Li, Xiaosong
|
|
1993
|
36 |
11 |
p. 1515-1521
7 p.
|
artikel
|
| 7 |
Anomalies in Schottky diode I–V characteristics induced by annealing
|
Drápal, S.
|
|
1993
|
36 |
11 |
p. 1639-1640
2 p.
|
artikel
|
| 8 |
A physical model for the edge effects in narrow-width MOSFETs
|
Deen, M.J.
|
|
1993
|
36 |
11 |
p. 1557-1562
6 p.
|
artikel
|
| 9 |
Back-gate induced random telegraph signal noise in fully-depleted silicon-on-insulator nMOSFETs
|
Simoen, E.
|
|
1993
|
36 |
11 |
p. 1593-1596
4 p.
|
artikel
|
| 10 |
Calculation of the wave functions in the space charge region of a double-barrier resonant tunneling diode, with applications
|
Khan, M.Rezwan
|
|
1993
|
36 |
11 |
p. 1619-1622
4 p.
|
artikel
|
| 11 |
Comments on “Measurement of the resistance of metal-semiconductor-metal structures using the geometrical magnetoresistance technique”
|
Somogyi, K.
|
|
1993
|
36 |
11 |
p. 1651-
1 p.
|
artikel
|
| 12 |
D-band (110–170 GHz) InP gunn devices
|
Kamoua, R.
|
|
1993
|
36 |
11 |
p. 1547-1555
9 p.
|
artikel
|
| 13 |
Double peak spectra in spontaneous edge electroluminescence
|
Zavadil, J.
|
|
1993
|
36 |
11 |
p. 1623-1632
10 p.
|
artikel
|
| 14 |
Editorial: Software survey section
|
|
|
1993
|
36 |
11 |
p. I-III
nvt p.
|
artikel
|
| 15 |
Estimation of noise power spectral densities from the Monte-Carlo simulated terminal currents in semiconductor devices
|
Lee, Kie Young
|
|
1993
|
36 |
11 |
p. 1563-1570
8 p.
|
artikel
|
| 16 |
Extraction of Schottky diode (and p−n junction) parameters from I–V characteristics
|
Evangelou, E.K.
|
|
1993
|
36 |
11 |
p. 1633-1635
3 p.
|
artikel
|
| 17 |
Formulation of mobility fluctuation 1 f noise in bipolar junction transistors
|
Jang, Sheng-Lyang
|
|
1993
|
36 |
11 |
p. 1541-1545
5 p.
|
artikel
|
| 18 |
High frequency capacitance-voltage characteristics of MOS tunnel diodes in presence of interface states and fixed oxide charges
|
Chattopadhyay, P.
|
|
1993
|
36 |
11 |
p. 1641-1644
4 p.
|
artikel
|
| 19 |
Modelling and experimental analysis of the impact of process induced stress on the electrical performance of GaAs MESFETs
|
McNally, P.J.
|
|
1993
|
36 |
11 |
p. 1597-1612
16 p.
|
artikel
|
| 20 |
New BiCMOS delay model to include R C-limited BJT saturation effect
|
Yan, Z.X.
|
|
1993
|
36 |
11 |
p. 1523-1528
6 p.
|
artikel
|
| 21 |
Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers
|
Jungemann, Chr.
|
|
1993
|
36 |
11 |
p. 1529-1540
12 p.
|
artikel
|
| 22 |
Theoretical analysis of threshold voltage behaviors of N-channel JMOSFET
|
Yip, K.L.
|
|
1993
|
36 |
11 |
p. 1645-1649
5 p.
|
artikel
|
| 23 |
The total switch time of silicon bipolar transistors with base doping gradients or with germanium gradients in the base
|
Karlsteen, M.
|
|
1993
|
36 |
11 |
p. 1571-1578
8 p.
|
artikel
|
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