| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A consistent experimental method for the extraction of the threshold voltage of SOI nMOSFETs from room down to cryogenic temperatures
|
Rotondaro, A.L.P.
|
|
1993
|
36 |
10 |
p. 1465-1468
4 p.
|
artikel
|
| 2 |
Analysis of surface plasmon polariton enhancement in photodetection by Al—GaAs Schottky diodes
|
Tamm, I.R.
|
|
1993
|
36 |
10 |
p. 1417-1427
11 p.
|
artikel
|
| 3 |
A novel PHL-emitter bipolar transistor—Fabrication and characterization
|
Chang, Kun-Zen
|
|
1993
|
36 |
10 |
p. 1393-1399
7 p.
|
artikel
|
| 4 |
A unified wide temperature range model for the energy gap, the effective carrier mass and intrinsic concentration in silicon
|
Vankemmel, R.
|
|
1993
|
36 |
10 |
p. 1379-1384
6 p.
|
artikel
|
| 5 |
Charge retention in scaled SONOS nonvolatile semiconductor memory devices—Modeling and characterization
|
Hu, Yin
|
|
1993
|
36 |
10 |
p. 1401-1416
16 p.
|
artikel
|
| 6 |
Editorial: Software survey section
|
|
|
1993
|
36 |
10 |
p. I-III
nvt p.
|
artikel
|
| 7 |
Electrical 1 f noise related to carrier transport
|
Zaklikiewicz, Andrzej M.
|
|
1993
|
36 |
10 |
p. 1477-1480
4 p.
|
artikel
|
| 8 |
Impact ionization rate of electrons for accurate simulation of substrate current in submicron devices
|
Saha, Samar
|
|
1993
|
36 |
10 |
p. 1429-1432
4 p.
|
artikel
|
| 9 |
Impact ionization within the hydrodynamic approach to semiconductor transport
|
Quade, W.
|
|
1993
|
36 |
10 |
p. 1493-1505
13 p.
|
artikel
|
| 10 |
Low-frequency gain dispersion in ion-implanted InP JFETs
|
Kruppa, W.
|
|
1993
|
36 |
10 |
p. 1445-1453
9 p.
|
artikel
|
| 11 |
Mechanisms of Fermi level pinning in Schottky barriers on InGaAsSb and AlGaAsSb
|
Polyakov, A.Y.
|
|
1993
|
36 |
10 |
p. 1371-1373
3 p.
|
artikel
|
| 12 |
Modeling of hot-electron-induced characteristic degradations for n-channel MOSFETs
|
Wong, H.
|
|
1993
|
36 |
10 |
p. 1469-1475
7 p.
|
artikel
|
| 13 |
Numerical simulation of the suppression of sidegating effects in GaAs MESFETs by ion bombardment
|
Chang, Shwu-Jing
|
|
1993
|
36 |
10 |
p. 1455-1464
10 p.
|
artikel
|
| 14 |
Optimization of AlGaAs/GaAs heterojunction bipolar transistors for current gain, cutoff frequency and maximum frequency
|
Liou, J.J.
|
|
1993
|
36 |
10 |
p. 1481-1491
11 p.
|
artikel
|
| 15 |
Quantum tunneling of electrons through superlattices in metal-semiconductor ohmic contacts
|
Huang, F.Y.
|
|
1993
|
36 |
10 |
p. 1375-1378
4 p.
|
artikel
|
| 16 |
Theoretical analysis of current gain of normally-off junction type field-effect transistor
|
Kang, Bao-Wei
|
|
1993
|
36 |
10 |
p. 1385-1391
7 p.
|
artikel
|
| 17 |
Time of flight analysis of electrical charge transport in insulating devices
|
Mirchina, N.R.
|
|
1993
|
36 |
10 |
p. 1433-1443
11 p.
|
artikel
|
| 18 |
Two-level noise switching in YBa2Cu3O7 microbridges
|
Butler, Donald P.
|
|
1993
|
36 |
10 |
p. 1507-1510
4 p.
|
artikel
|
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