| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of the quasi-saturation behavior considering the drain-to-source voltage and cell-spacing effects for a vertical DMOS power transistor
|
Lou, K.H.
|
|
1993
|
36 |
1 |
p. 85-91
7 p.
|
artikel
|
| 2 |
Analytical base transit time model of uniformly-doped-based bipolar transistors for high-injection regions
|
Suzuki, Kunihiro
|
|
1993
|
36 |
1 |
p. 109-110
2 p.
|
artikel
|
| 3 |
A new oxidation-resistant CoSi2 process for self-aligned silicidation (salicide) technology
|
Lou, Yung-Song
|
|
1993
|
36 |
1 |
p. 75-83
9 p.
|
artikel
|
| 4 |
Comments on “Surface potential transients of ultrathin SiO2Si structures”
|
Riesz, Ferenc
|
|
1993
|
36 |
1 |
p. 115-
1 p.
|
artikel
|
| 5 |
Editorial Board
|
|
|
1993
|
36 |
1 |
p. IFC-
1 p.
|
artikel
|
| 6 |
Editorial: Software survey section
|
|
|
1993
|
36 |
1 |
p. I-III
nvt p.
|
artikel
|
| 7 |
Effect of p-n coupling on reverse recovery transient of a homojunction solar cell
|
Kapoor, Avinashi
|
|
1993
|
36 |
1 |
p. 93-97
5 p.
|
artikel
|
| 8 |
Nickel-gallium arsenide high-voltage power Schottky diodes
|
Ashkinazi, G.
|
|
1993
|
36 |
1 |
p. 13-18
6 p.
|
artikel
|
| 9 |
Noise redistribution in thin films due to electron scattering at the boundaries
|
Bulashenko, O.M.
|
|
1993
|
36 |
1 |
p. 111-113
3 p.
|
artikel
|
| 10 |
Properties of a new U.V.-sensitive CCD detector array
|
Kothe, J.
|
|
1993
|
36 |
1 |
p. 69-74
6 p.
|
artikel
|
| 11 |
Quasi-Schottky barrier MSM-diode on n-Ga0.47In0.53As using a depleted p +-Ga 0.47 In 0.53As layer grown by LP-MOVPE
|
Averin, S.V.
|
|
1993
|
36 |
1 |
p. 61-67
7 p.
|
artikel
|
| 12 |
Reply to “Comments on ‘Surface potential transients of ultrathin SiO2Si structures’”
|
Mizsei, J.
|
|
1993
|
36 |
1 |
p. 117-
1 p.
|
artikel
|
| 13 |
Rigorous theory and simplified model of the band-to-band tunneling in silicon
|
Schenk, A.
|
|
1993
|
36 |
1 |
p. 19-34
16 p.
|
artikel
|
| 14 |
Selfheating effects in silicon resistors operated at cryogenic ambient temperatures
|
Gutiérrez D., Edmundo A.
|
|
1993
|
36 |
1 |
p. 41-52
12 p.
|
artikel
|
| 15 |
Simple expression for the effective electron relaxation time in n-GaAs
|
Batchelor, A.R.
|
|
1993
|
36 |
1 |
p. 103-105
3 p.
|
artikel
|
| 16 |
Spreading resistance analysis based on the method of regularisation
|
Choo, S.C.
|
|
1993
|
36 |
1 |
p. 1-11
11 p.
|
artikel
|
| 17 |
The impact of electron transport regimes on the linearity of AlGaAs/n +-InGaAs HFETs
|
Greenberg, David R.
|
|
1993
|
36 |
1 |
p. 53-60
8 p.
|
artikel
|
| 18 |
The peripheral bipolar junction transistor and its relation to predictability in device modeling
|
Choi, M.
|
|
1993
|
36 |
1 |
p. 35-40
6 p.
|
artikel
|
| 19 |
Thermal resistance evaluation in 3-D thermal simulation of MOSFET transistors
|
Hirsch, I.
|
|
1993
|
36 |
1 |
p. 106-108
3 p.
|
artikel
|
| 20 |
Triangular-voltage sweep C-V method for determination of generation lifetime and surface generation velocity
|
Peykov, P.
|
|
1993
|
36 |
1 |
p. 99-102
4 p.
|
artikel
|
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