| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A closed-form two-dimensional model of a laser grooved solar cell
|
Strollo, Antonio G.M.
|
|
1992
|
35 |
8 |
p. 1109-1118
10 p.
|
artikel
|
| 2 |
Comparative analysis of the high-frequency performance of Si/Si1−x Ge x heterojunction bipolar and Si bipolar transistors
|
Chen, J.
|
|
1992
|
35 |
8 |
p. 1037-1044
8 p.
|
artikel
|
| 3 |
Corrigenda
|
|
|
1992
|
35 |
8 |
p. 1201-
1 p.
|
artikel
|
| 4 |
Current dependence of base-collector capacitance of bipolar transistors
|
Liu, William
|
|
1992
|
35 |
8 |
p. 1051-1057
7 p.
|
artikel
|
| 5 |
Determination of interface state density in MOSFETs using the spatial profiling charge pumping technique
|
Li, X.M.
|
|
1992
|
35 |
8 |
p. 1059-1063
5 p.
|
artikel
|
| 6 |
Evaluation of low dark current InSb photovoltaic detectors
|
Chen, L.P.
|
|
1992
|
35 |
8 |
p. 1081-1084
4 p.
|
artikel
|
| 7 |
Evidence of Γ-Γ and X-X coupling using a single abrupt isotype n-GaAs/Al0.5Ga0.5As heterojunction
|
Serra, A.Cruz
|
|
1992
|
35 |
8 |
p. 1065-1071
7 p.
|
artikel
|
| 8 |
Excess white noise in bipolar junction transistors
|
Lukyanchikova, N.B.
|
|
1992
|
35 |
8 |
p. 1179-1184
6 p.
|
artikel
|
| 9 |
Extended theoretical analysis of the steady-state linear behaviour of accumulation-mode, long-channel p-MOSFETs on SOI substrates
|
Flandre, D.
|
|
1992
|
35 |
8 |
p. 1085-1092
8 p.
|
artikel
|
| 10 |
Impact of low-temperature transient-enhanced diffusion of dopants in silicon
|
Baccus, Bruno
|
|
1992
|
35 |
8 |
p. 1045-1049
5 p.
|
artikel
|
| 11 |
Influence of tunnel oxide thickness variation on the programmed window of FLOTOX EEPROM cells
|
Papadas, C.
|
|
1992
|
35 |
8 |
p. 1195-1196
2 p.
|
artikel
|
| 12 |
Investigation of the background in the spectrum of an MOS structure obtained by correlated DLTS
|
Gmucová, K.
|
|
1992
|
35 |
8 |
p. 1197-1199
3 p.
|
artikel
|
| 13 |
Large-signal nonquasi-static model for single and double heterojunction bipolar transistors
|
Huang, Jeffrey C.
|
|
1992
|
35 |
8 |
p. 1093-1098
6 p.
|
artikel
|
| 14 |
Measurements of interface state density in partially- and fully-depleted silicon-on-insulator MOSFETs by a high-low-frequency transconductance method
|
Yang, P.C.
|
|
1992
|
35 |
8 |
p. 1031-1035
5 p.
|
artikel
|
| 15 |
Photo-induced current measurement for the characterized of deep-level traps in lattice-matched MODFETs on InP substrate
|
Sung, Roberto
|
|
1992
|
35 |
8 |
p. 1129-1137
9 p.
|
artikel
|
| 16 |
Properties of hot carrier induced traps in MOSFETs characterized by the floating-gate technique
|
Vuillaume, Dominique
|
|
1992
|
35 |
8 |
p. 1099-1107
9 p.
|
artikel
|
| 17 |
Representation of ion implantation projected range profiles by Pearson distribution curves for silicon technology
|
Bowyer, M.D.J.
|
|
1992
|
35 |
8 |
p. 1151-1166
16 p.
|
artikel
|
| 18 |
Software survey section
|
|
|
1992
|
35 |
8 |
p. I-IV
nvt p.
|
artikel
|
| 19 |
Statistical analysis of transients involved in moderate amplitude burst noise in bipolar junction transistors
|
Knott, K.F.
|
|
1992
|
35 |
8 |
p. 1173-1177
5 p.
|
artikel
|
| 20 |
Studies on hydrogenated Pd/p-type Si diodes
|
Tripathi, D.
|
|
1992
|
35 |
8 |
p. 1185-1193
9 p.
|
artikel
|
| 21 |
Study of sudden changes of large amplitude burst noise in bipolar transistors
|
Knott, K.F.
|
|
1992
|
35 |
8 |
p. 1167-1171
5 p.
|
artikel
|
| 22 |
The coupled hole-phonon system and minority-electron transport in p-GaAs
|
Sadra, K.
|
|
1992
|
35 |
8 |
p. 1139-1149
11 p.
|
artikel
|
| 23 |
Theoretical comparison of the stability characteristics of capped and uncapped Ge x Si1−x strained epilayers
|
Jain, S.C.
|
|
1992
|
35 |
8 |
p. 1073-1079
7 p.
|
artikel
|
| 24 |
Two-dimensional modeling of current gain in downscaled bipolar transistors
|
Rinaldi, Niccolo'
|
|
1992
|
35 |
8 |
p. 1119-1128
10 p.
|
artikel
|
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