| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Arsenic ion implantation through Mo and Mo silicide layers for shallow junction formation
|
Angelucci, R.
|
|
1992
|
35 |
7 |
p. 941-947
7 p.
|
article
|
| 2 |
A stochastic algorithm for high speed capacitance extraction in integrated circuits
|
Le Coz, Y.L.
|
|
1992
|
35 |
7 |
p. 1005-1012
8 p.
|
article
|
| 3 |
A unified mobility model for device simulation—II. Temperature dependence of carrier mobility and lifetime
|
Klaassen, D.B.M.
|
|
1992
|
35 |
7 |
p. 961-967
7 p.
|
article
|
| 4 |
A unified mobility model for device simulation—I. Model equations and concentration dependence
|
Klaassen, D.B.M.
|
|
1992
|
35 |
7 |
p. 953-959
7 p.
|
article
|
| 5 |
Capacitance method for determination of LDD MOSFET geometrical parameters
|
Vitanov, P.
|
|
1992
|
35 |
7 |
p. 985-991
7 p.
|
article
|
| 6 |
Contact resistance and 1 F noise of Sn/In/HgCdTe contacts
|
Fastow, R.
|
|
1992
|
35 |
7 |
p. 1025-1026
2 p.
|
article
|
| 7 |
Current-voltage relation for abrupt N +-P-N + and N-i-N structures
|
Bakker, J.G.C.
|
|
1992
|
35 |
7 |
p. 897-904
8 p.
|
article
|
| 8 |
Diagnosis of NMOS DRAM functional performance as affected by a picosecond dye laser
|
Kim, Q.
|
|
1992
|
35 |
7 |
p. 905-912
8 p.
|
article
|
| 9 |
Editorial: Software survey section
|
|
|
1992
|
35 |
7 |
p. I-III
nvt p.
|
article
|
| 10 |
Effect of bandgap gradient in the base region of SiGe heterojunction bipolar transistors
|
Roulston, David J.
|
|
1992
|
35 |
7 |
p. 1019-1020
2 p.
|
article
|
| 11 |
Experimental method for extraction of emitter injection limited gain in bipolar transistors
|
Hamel, J.S.
|
|
1992
|
35 |
7 |
p. 1021-1022
2 p.
|
article
|
| 12 |
Fully self-aligned N-p-n InGaAs/InP HBTs with evaluation of their microwave characteristics
|
Pitz, G.
|
|
1992
|
35 |
7 |
p. 937-939
3 p.
|
article
|
| 13 |
How to measure and interpret the conduction current in a.c. thin-film electroluminescent devices
|
Neyts, K.A.
|
|
1992
|
35 |
7 |
p. 933-936
4 p.
|
article
|
| 14 |
Influence of a non-uniformly doped semiconductor region on skin effect resistance of ohmic contacts in mm-wave IMPATTs
|
Ahmad, I.
|
|
1992
|
35 |
7 |
p. 883-889
7 p.
|
article
|
| 15 |
Influence of a selectively ion-implanted collector on bipolar transistor electrical characteristics
|
Liang, Minchang
|
|
1992
|
35 |
7 |
p. 1017-1018
2 p.
|
article
|
| 16 |
Measurement of transport parameters in heavily-doped emitters of bipolar transistors
|
Popp, J.
|
|
1992
|
35 |
7 |
p. 999-1003
5 p.
|
article
|
| 17 |
Measurements of substrate carrier lifetimes in silicon-on-insulator wafers by a contactless dual-beam optical modulation technique
|
Yang, Ping-Chang
|
|
1992
|
35 |
7 |
p. 927-932
6 p.
|
article
|
| 18 |
Modeling Si/Si1−xGex heterojunction bipolar transistors
|
Yuan, J.S.
|
|
1992
|
35 |
7 |
p. 921-926
6 p.
|
article
|
| 19 |
New technique for the determination of series resistance of Schottky barrier diodes
|
Chattopadhyay, P.
|
|
1992
|
35 |
7 |
p. 1023-1024
2 p.
|
article
|
| 20 |
Novel effects of heating rate on the activation/recrystallization of boron-implanted Si substrates
|
Juang, M.H.
|
|
1992
|
35 |
7 |
p. 969-973
5 p.
|
article
|
| 21 |
Parasitic conduction current in the passivation ledge of AlGaAs/GaAs heterojunction bipolar transistors
|
Liu, William
|
|
1992
|
35 |
7 |
p. 891-895
5 p.
|
article
|
| 22 |
Photoelectric characteristics of a semiconductor diode with an abrupt junction at high photoexcitation levels
|
Kucherenko, S.S.
|
|
1992
|
35 |
7 |
p. 993-997
5 p.
|
article
|
| 23 |
Properties of amorphous Bi2S3-crystalline silicon heterojunctions
|
Singh, B.K.
|
|
1992
|
35 |
7 |
p. 1027-1029
3 p.
|
article
|
| 24 |
Revised theory of current transport through the Schottky structure
|
Racko, J.
|
|
1992
|
35 |
7 |
p. 913-919
7 p.
|
article
|
| 25 |
Simple accurate general expression of the Fermi-Dirac integral F j (a) for arbitrary a and j > −1
|
Van Cong, Huynh
|
|
1992
|
35 |
7 |
p. 949-951
3 p.
|
article
|
| 26 |
Simple interface-layer model for the nonideal characteristics of the Schottky-barrier diode
|
Szatkowski, J.
|
|
1992
|
35 |
7 |
p. 1013-1015
3 p.
|
article
|
| 27 |
Spatiotemporal chaos in Gunn diodes in presence of impact ionization
|
Čenys, A.
|
|
1992
|
35 |
7 |
p. 975-984
10 p.
|
article
|
Journal description