nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Arsenic ion implantation through Mo and Mo silicide layers for shallow junction formation
|
Angelucci, R. |
|
1992 |
35 |
7 |
p. 941-947 7 p. |
artikel |
2 |
A stochastic algorithm for high speed capacitance extraction in integrated circuits
|
Le Coz, Y.L. |
|
1992 |
35 |
7 |
p. 1005-1012 8 p. |
artikel |
3 |
A unified mobility model for device simulation—II. Temperature dependence of carrier mobility and lifetime
|
Klaassen, D.B.M. |
|
1992 |
35 |
7 |
p. 961-967 7 p. |
artikel |
4 |
A unified mobility model for device simulation—I. Model equations and concentration dependence
|
Klaassen, D.B.M. |
|
1992 |
35 |
7 |
p. 953-959 7 p. |
artikel |
5 |
Capacitance method for determination of LDD MOSFET geometrical parameters
|
Vitanov, P. |
|
1992 |
35 |
7 |
p. 985-991 7 p. |
artikel |
6 |
Contact resistance and 1 F noise of Sn/In/HgCdTe contacts
|
Fastow, R. |
|
1992 |
35 |
7 |
p. 1025-1026 2 p. |
artikel |
7 |
Current-voltage relation for abrupt N +-P-N + and N-i-N structures
|
Bakker, J.G.C. |
|
1992 |
35 |
7 |
p. 897-904 8 p. |
artikel |
8 |
Diagnosis of NMOS DRAM functional performance as affected by a picosecond dye laser
|
Kim, Q. |
|
1992 |
35 |
7 |
p. 905-912 8 p. |
artikel |
9 |
Editorial: Software survey section
|
|
|
1992 |
35 |
7 |
p. I-III nvt p. |
artikel |
10 |
Effect of bandgap gradient in the base region of SiGe heterojunction bipolar transistors
|
Roulston, David J. |
|
1992 |
35 |
7 |
p. 1019-1020 2 p. |
artikel |
11 |
Experimental method for extraction of emitter injection limited gain in bipolar transistors
|
Hamel, J.S. |
|
1992 |
35 |
7 |
p. 1021-1022 2 p. |
artikel |
12 |
Fully self-aligned N-p-n InGaAs/InP HBTs with evaluation of their microwave characteristics
|
Pitz, G. |
|
1992 |
35 |
7 |
p. 937-939 3 p. |
artikel |
13 |
How to measure and interpret the conduction current in a.c. thin-film electroluminescent devices
|
Neyts, K.A. |
|
1992 |
35 |
7 |
p. 933-936 4 p. |
artikel |
14 |
Influence of a non-uniformly doped semiconductor region on skin effect resistance of ohmic contacts in mm-wave IMPATTs
|
Ahmad, I. |
|
1992 |
35 |
7 |
p. 883-889 7 p. |
artikel |
15 |
Influence of a selectively ion-implanted collector on bipolar transistor electrical characteristics
|
Liang, Minchang |
|
1992 |
35 |
7 |
p. 1017-1018 2 p. |
artikel |
16 |
Measurement of transport parameters in heavily-doped emitters of bipolar transistors
|
Popp, J. |
|
1992 |
35 |
7 |
p. 999-1003 5 p. |
artikel |
17 |
Measurements of substrate carrier lifetimes in silicon-on-insulator wafers by a contactless dual-beam optical modulation technique
|
Yang, Ping-Chang |
|
1992 |
35 |
7 |
p. 927-932 6 p. |
artikel |
18 |
Modeling Si/Si1−xGex heterojunction bipolar transistors
|
Yuan, J.S. |
|
1992 |
35 |
7 |
p. 921-926 6 p. |
artikel |
19 |
New technique for the determination of series resistance of Schottky barrier diodes
|
Chattopadhyay, P. |
|
1992 |
35 |
7 |
p. 1023-1024 2 p. |
artikel |
20 |
Novel effects of heating rate on the activation/recrystallization of boron-implanted Si substrates
|
Juang, M.H. |
|
1992 |
35 |
7 |
p. 969-973 5 p. |
artikel |
21 |
Parasitic conduction current in the passivation ledge of AlGaAs/GaAs heterojunction bipolar transistors
|
Liu, William |
|
1992 |
35 |
7 |
p. 891-895 5 p. |
artikel |
22 |
Photoelectric characteristics of a semiconductor diode with an abrupt junction at high photoexcitation levels
|
Kucherenko, S.S. |
|
1992 |
35 |
7 |
p. 993-997 5 p. |
artikel |
23 |
Properties of amorphous Bi2S3-crystalline silicon heterojunctions
|
Singh, B.K. |
|
1992 |
35 |
7 |
p. 1027-1029 3 p. |
artikel |
24 |
Revised theory of current transport through the Schottky structure
|
Racko, J. |
|
1992 |
35 |
7 |
p. 913-919 7 p. |
artikel |
25 |
Simple accurate general expression of the Fermi-Dirac integral F j (a) for arbitrary a and j > −1
|
Van Cong, Huynh |
|
1992 |
35 |
7 |
p. 949-951 3 p. |
artikel |
26 |
Simple interface-layer model for the nonideal characteristics of the Schottky-barrier diode
|
Szatkowski, J. |
|
1992 |
35 |
7 |
p. 1013-1015 3 p. |
artikel |
27 |
Spatiotemporal chaos in Gunn diodes in presence of impact ionization
|
Čenys, A. |
|
1992 |
35 |
7 |
p. 975-984 10 p. |
artikel |