| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical model for GaAs pin diodes for a wide range of currents and temperatures
|
Bellone, S.
|
|
1992
|
35 |
6 |
p. 821-827
7 p.
|
artikel
|
| 2 |
An analytical bandgap-narrowing-related current-gain model for BJT devices operating at 77 K
|
Lu, T.C.
|
|
1992
|
35 |
6 |
p. 785-790
6 p.
|
artikel
|
| 3 |
A new GaAs bipolar transistor with a doping-superlattice collector
|
Sun, Chung-Yih
|
|
1992
|
35 |
6 |
p. 751-757
7 p.
|
artikel
|
| 4 |
An inversion method for the complete characterization of transparent film-absorbing substrate systems using multiple angle ellipsometry
|
Easwarakhanthan, T.
|
|
1992
|
35 |
6 |
p. 855-864
10 p.
|
artikel
|
| 5 |
A survey of the potential of an IrSi Schottky barrier MOSFET based on simulation studies
|
Misra, D.
|
|
1992
|
35 |
6 |
p. 829-833
5 p.
|
artikel
|
| 6 |
Corrigendum
|
|
|
1992
|
35 |
6 |
p. i-
1 p.
|
artikel
|
| 7 |
Device modeling by deterministic self-consistent solution of Poisson and Boltzmann transport equations
|
Lin, Hongchin
|
|
1992
|
35 |
6 |
p. 769-778
10 p.
|
artikel
|
| 8 |
Editorial: Software survey section
|
|
|
1992
|
35 |
6 |
p. iii-v
nvt p.
|
artikel
|
| 9 |
Effects of heavy doping on numerical simulations of gallium arsenide bipolar transistors
|
Tomizawa, Masaaki
|
|
1992
|
35 |
6 |
p. 865-874
10 p.
|
artikel
|
| 10 |
Influence of contact treatments on the electrical characteristics of shallow-junction titanium-based contacts
|
Liauh, H.R.
|
|
1992
|
35 |
6 |
p. 779-783
5 p.
|
artikel
|
| 11 |
Modelling of band tails and their effects on minority carrier transport in heavily doped silicon
|
Pan, Y.
|
|
1992
|
35 |
6 |
p. 791-796
6 p.
|
artikel
|
| 12 |
Monolithic TJS light emitting device grown on an SI GaAs substrate by LPE
|
|
|
1992
|
35 |
6 |
p. 879-881
3 p.
|
artikel
|
| 13 |
Nonlinear model for MODFET parasitic resistances
|
Abdel-Motaleb, Ibrahim M.
|
|
1992
|
35 |
6 |
p. 759-767
9 p.
|
artikel
|
| 14 |
Numerical modelling of carrier profiles in isotype and anisotype heterojunction devices
|
Pittroff, W.
|
|
1992
|
35 |
6 |
p. 815-820
6 p.
|
artikel
|
| 15 |
Origin of the anomalous peak in the forward capacitance-voltage plot of a Schottky barrier diode
|
|
|
1992
|
35 |
6 |
p. 875-878
4 p.
|
artikel
|
| 16 |
Parameter extraction from non-ideal C−V characteristics of a Schottky diode with and without interfacial layer
|
Türüt, Abdulmecit
|
|
1992
|
35 |
6 |
p. 835-841
7 p.
|
artikel
|
| 17 |
Surface recombination current of AlGaAs/GaAs heterojunction bipolar transistors
|
Liou, J.L.
|
|
1992
|
35 |
6 |
p. 805-813
9 p.
|
artikel
|
| 18 |
Theory and measurement of quantization effects on SiSiO2 interface trap modeling
|
Siergiej, R.R.
|
|
1992
|
35 |
6 |
p. 843-854
12 p.
|
artikel
|
| 19 |
Thickness determination of thin SiO2 on silicon
|
Reisinger, H.
|
|
1992
|
35 |
6 |
p. 797-803
7 p.
|
artikel
|
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