| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A δ-doped GaAs/In0.37Ga0.63As/GaAs high electron mobility transistor prepared by low-pressure metalorganic chemical vapor deposition
|
Hsu, W.C.
|
|
1992
|
35 |
5 |
p. 635-638
4 p.
|
artikel
|
| 2 |
Analytical d.c. and small-signal a.c. modeling of Si delta(δ)-doped field effect transistors
|
Chen, Q.
|
|
1992
|
35 |
5 |
p. 687-693
7 p.
|
artikel
|
| 3 |
A poly-emitter BJT Gummel-Poon model for pull-up transient analysis of a BiCMOS inverter
|
Kuo, J.B.
|
|
1992
|
35 |
5 |
p. 629-633
5 p.
|
artikel
|
| 4 |
A 2000 V non-punchthrough IGBT with high ruggedness
|
Laska, T.
|
|
1992
|
35 |
5 |
p. 681-685
5 p.
|
artikel
|
| 5 |
Breakdown characteristics of emitter-base and collector-base junctions of silicon bipolar junction transistors
|
Jang, Sheng-Lyang
|
|
1992
|
35 |
5 |
p. 615-622
8 p.
|
artikel
|
| 6 |
Direct observation of intermediate levels in multistep burst noise
|
Knott, K.F.
|
|
1992
|
35 |
5 |
p. 749-750
2 p.
|
artikel
|
| 7 |
Editorial: Software survey section
|
|
|
1992
|
35 |
5 |
p. I-III
nvt p.
|
artikel
|
| 8 |
Ehrenfest derivation of forces acting within semiconductors of inhomogeneous material composition
|
Le Coz, Y.L.
|
|
1992
|
35 |
5 |
p. 695-698
4 p.
|
artikel
|
| 9 |
Experimental studies on the NDR of Si1−x Ge x/Si triple barrier resonant tunneling diodes
|
Xu, D.X.
|
|
1992
|
35 |
5 |
p. 611-614
4 p.
|
artikel
|
| 10 |
Highly forward-biased FET gates and their experimental current and voltage distributions
|
Haydl, William H.
|
|
1992
|
35 |
5 |
p. 747-748
2 p.
|
artikel
|
| 11 |
Influence of drain bias voltage on determining the effective channel length and series resistance of drain-engineered MOSFETs below saturation
|
Chen, S.L.
|
|
1992
|
35 |
5 |
p. 643-649
7 p.
|
artikel
|
| 12 |
Influence of majority carrier bandtails on the performance of semiconductor devices
|
Van Mieghem, P.
|
|
1992
|
35 |
5 |
p. 699-704
6 p.
|
artikel
|
| 13 |
Intrinsic and extrinsic effects on performance limitation of AlGaAs/GaAs double-barrier resonant tunneling structures
|
Wu, J.S.
|
|
1992
|
35 |
5 |
p. 723-730
8 p.
|
artikel
|
| 14 |
Maximally flat transmission windows in finite superlattices
|
Vanbesien, O.
|
|
1992
|
35 |
5 |
p. 665-669
5 p.
|
artikel
|
| 15 |
Modeling the non-uniformity of base sheet resistivity at high currents in bipolar transistors
|
Decoutere, S.
|
|
1992
|
35 |
5 |
p. 651-653
3 p.
|
artikel
|
| 16 |
Modified simple expression for bandgap narrowing in n-type GaAs
|
Jain, S.C.
|
|
1992
|
35 |
5 |
p. 639-642
4 p.
|
artikel
|
| 17 |
Negative differential conduction (NDC) in n +-v-p +-v-n + AlGaAs/GaAs heterojunction devices
|
Tseng, H.C.
|
|
1992
|
35 |
5 |
p. 623-628
6 p.
|
artikel
|
| 18 |
New analytical polycrystalline-silicon thin-film transistor model for computer aided design and parameter extraction
|
Byun, Young Hee
|
|
1992
|
35 |
5 |
p. 655-663
9 p.
|
artikel
|
| 19 |
On the design of doping concentration profiles for GaAs transferred-electron device layers
|
Batchelor, A.R.
|
|
1992
|
35 |
5 |
p. 735-741
7 p.
|
artikel
|
| 20 |
On the relative advantages of modelling semiconductors using a non-isothermal analysis
|
Batchelor, A.R.
|
|
1992
|
35 |
5 |
p. 743-745
3 p.
|
artikel
|
| 21 |
Physical model for characterizing and simulating a FLOTOX EEPROM device
|
Wu, Ching-Yuan
|
|
1992
|
35 |
5 |
p. 705-716
12 p.
|
artikel
|
| 22 |
Self-heating in BJT circuit parameter extraction
|
Reisch, Michael
|
|
1992
|
35 |
5 |
p. 677-679
3 p.
|
artikel
|
| 23 |
Steady-states in a cooled p-Ge photoconductor via the Landsberg-Schöll-Shukla model
|
Nikolić, Konstantin
|
|
1992
|
35 |
5 |
p. 671-675
5 p.
|
artikel
|
| 24 |
Thermal excitation rates and capture cross sections associated with deep impurities in semiconductors
|
Amato, M.A.
|
|
1992
|
35 |
5 |
p. 731-734
4 p.
|
artikel
|
| 25 |
Triggering and sustaining of snapback in MOSFETs
|
Skotnicki, Tomasz
|
|
1992
|
35 |
5 |
p. 717-721
5 p.
|
artikel
|
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