nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Analytical expressions for the drift velocity of hot charge carriers in silicon
|
Shukla, S.R. |
|
1992 |
35 |
4 |
p. 593-597 5 p. |
artikel |
2 |
A new GaAs switching device with double-confinement-collector structure
|
Liu, Wen-Chau |
|
1992 |
35 |
4 |
p. 501-504 4 p. |
artikel |
3 |
Announcement
|
|
|
1992 |
35 |
4 |
p. I- 1 p. |
artikel |
4 |
A simplified model for the distributed base contact impedance in heterojunction bipolar transistors
|
Liu, William |
|
1992 |
35 |
4 |
p. 547-552 6 p. |
artikel |
5 |
Collector-emitter offset voltage in single- and double-base InGaAs(P)/InP heterojunction bipolar transistors
|
Chen, S.C. |
|
1992 |
35 |
4 |
p. 553-560 8 p. |
artikel |
6 |
Derivation of the emitter-collector transit time of heterojunction bipolar transistors
|
Liu, William |
|
1992 |
35 |
4 |
p. 541-545 5 p. |
artikel |
7 |
Editorial: Software survey section
|
|
|
1992 |
35 |
4 |
p. III-V nvt p. |
artikel |
8 |
Efficient charge control model for pseudomorphic and strained high electron mobility transistors on GaAs and InP substrates
|
Halkias, G. |
|
1992 |
35 |
4 |
p. 459-465 7 p. |
artikel |
9 |
Formation of shallow p + n junctions by implanting BF2 − ions into thin cobalt films on silicon substrates
|
Juang, M.H. |
|
1992 |
35 |
4 |
p. 453-457 5 p. |
artikel |
10 |
Gavels, a velocity-space GaAs transport model—II. Velocity overshoot simulation
|
Dunn, Douglas E. |
|
1992 |
35 |
4 |
p. 477-481 5 p. |
artikel |
11 |
Gavels, a velocity-space GaAs transport model—I. Steady-state simulation
|
Dunn, Douglas E. |
|
1992 |
35 |
4 |
p. 467-475 9 p. |
artikel |
12 |
Growth and characterization of high-quality GaInAsSb layers on GaSb substrates by liquid-phase epitaxy
|
Wu, Meng-Chyi |
|
1992 |
35 |
4 |
p. 523-528 6 p. |
artikel |
13 |
Implementation of heterojunctions into the 2-D finite-element simulator prism: Some scaling considerations
|
Vankemmel, R. |
|
1992 |
35 |
4 |
p. 571-578 8 p. |
artikel |
14 |
I–V characteristics of an optically controlled Si-MESFET
|
Chakrabarti, P. |
|
1992 |
35 |
4 |
p. 587-592 6 p. |
artikel |
15 |
Low-frequency noise as a tool for characterization of near-band impurities in silicon
|
Scholz, F.J. |
|
1992 |
35 |
4 |
p. 447-452 6 p. |
artikel |
16 |
Modeling of the source resistance in modulation-doped FETs
|
Fu, S.T. |
|
1992 |
35 |
4 |
p. 489-499 11 p. |
artikel |
17 |
Modeling the base current of an a-Si:H/c-Si heterojunction bipolar transistor
|
Bonnaud, O. |
|
1992 |
35 |
4 |
p. 483-488 6 p. |
artikel |
18 |
Numerical studies of thermal effects on heterojunction bipolar transistor current-voltage characteristics using one-dimensional simulation
|
Liou, L.L. |
|
1992 |
35 |
4 |
p. 579-585 7 p. |
artikel |
19 |
On the role of fluorine in BF2 + implanted silicon
|
Virdi, G.S. |
|
1992 |
35 |
4 |
p. 535-540 6 p. |
artikel |
20 |
Relationship between measured and intrinsic transconductances for FETs with gate conduction
|
Chen, Q. |
|
1992 |
35 |
4 |
p. 513-514 2 p. |
artikel |
21 |
Superposition solution for minority carrier current in the emitter of bipolar devices
|
Alcubilla, R. |
|
1992 |
35 |
4 |
p. 529-533 5 p. |
artikel |
22 |
The polarity, field and fluence dependence of interface trap generation in thin silicon oxide
|
Dumin, D.J. |
|
1992 |
35 |
4 |
p. 515-522 8 p. |
artikel |
23 |
Transit time of fast bipolar transistors at high collector-current densities
|
Weng, J. |
|
1992 |
35 |
4 |
p. 599-610 12 p. |
artikel |
24 |
Transport coefficients for a silicon hydrodynamic model extracted from inhomogeneous Monte-Carlo calculations
|
Lee, Shin-Chi |
|
1992 |
35 |
4 |
p. 561-569 9 p. |
artikel |
25 |
Twin-MOSFET structure for suppression of kink and parasitic bipolar effects in SOI MOSFETs at room and liquid helium temperatures
|
Gao, Minghui |
|
1992 |
35 |
4 |
p. 505-512 8 p. |
artikel |