| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical expressions for the drift velocity of hot charge carriers in silicon
|
Shukla, S.R.
|
|
1992
|
35 |
4 |
p. 593-597
5 p.
|
artikel
|
| 2 |
A new GaAs switching device with double-confinement-collector structure
|
Liu, Wen-Chau
|
|
1992
|
35 |
4 |
p. 501-504
4 p.
|
artikel
|
| 3 |
Announcement
|
|
|
1992
|
35 |
4 |
p. I-
1 p.
|
artikel
|
| 4 |
A simplified model for the distributed base contact impedance in heterojunction bipolar transistors
|
Liu, William
|
|
1992
|
35 |
4 |
p. 547-552
6 p.
|
artikel
|
| 5 |
Collector-emitter offset voltage in single- and double-base InGaAs(P)/InP heterojunction bipolar transistors
|
Chen, S.C.
|
|
1992
|
35 |
4 |
p. 553-560
8 p.
|
artikel
|
| 6 |
Derivation of the emitter-collector transit time of heterojunction bipolar transistors
|
Liu, William
|
|
1992
|
35 |
4 |
p. 541-545
5 p.
|
artikel
|
| 7 |
Editorial: Software survey section
|
|
|
1992
|
35 |
4 |
p. III-V
nvt p.
|
artikel
|
| 8 |
Efficient charge control model for pseudomorphic and strained high electron mobility transistors on GaAs and InP substrates
|
Halkias, G.
|
|
1992
|
35 |
4 |
p. 459-465
7 p.
|
artikel
|
| 9 |
Formation of shallow p + n junctions by implanting BF2 − ions into thin cobalt films on silicon substrates
|
Juang, M.H.
|
|
1992
|
35 |
4 |
p. 453-457
5 p.
|
artikel
|
| 10 |
Gavels, a velocity-space GaAs transport model—II. Velocity overshoot simulation
|
Dunn, Douglas E.
|
|
1992
|
35 |
4 |
p. 477-481
5 p.
|
artikel
|
| 11 |
Gavels, a velocity-space GaAs transport model—I. Steady-state simulation
|
Dunn, Douglas E.
|
|
1992
|
35 |
4 |
p. 467-475
9 p.
|
artikel
|
| 12 |
Growth and characterization of high-quality GaInAsSb layers on GaSb substrates by liquid-phase epitaxy
|
Wu, Meng-Chyi
|
|
1992
|
35 |
4 |
p. 523-528
6 p.
|
artikel
|
| 13 |
Implementation of heterojunctions into the 2-D finite-element simulator prism: Some scaling considerations
|
Vankemmel, R.
|
|
1992
|
35 |
4 |
p. 571-578
8 p.
|
artikel
|
| 14 |
I–V characteristics of an optically controlled Si-MESFET
|
Chakrabarti, P.
|
|
1992
|
35 |
4 |
p. 587-592
6 p.
|
artikel
|
| 15 |
Low-frequency noise as a tool for characterization of near-band impurities in silicon
|
Scholz, F.J.
|
|
1992
|
35 |
4 |
p. 447-452
6 p.
|
artikel
|
| 16 |
Modeling of the source resistance in modulation-doped FETs
|
Fu, S.T.
|
|
1992
|
35 |
4 |
p. 489-499
11 p.
|
artikel
|
| 17 |
Modeling the base current of an a-Si:H/c-Si heterojunction bipolar transistor
|
Bonnaud, O.
|
|
1992
|
35 |
4 |
p. 483-488
6 p.
|
artikel
|
| 18 |
Numerical studies of thermal effects on heterojunction bipolar transistor current-voltage characteristics using one-dimensional simulation
|
Liou, L.L.
|
|
1992
|
35 |
4 |
p. 579-585
7 p.
|
artikel
|
| 19 |
On the role of fluorine in BF2 + implanted silicon
|
Virdi, G.S.
|
|
1992
|
35 |
4 |
p. 535-540
6 p.
|
artikel
|
| 20 |
Relationship between measured and intrinsic transconductances for FETs with gate conduction
|
Chen, Q.
|
|
1992
|
35 |
4 |
p. 513-514
2 p.
|
artikel
|
| 21 |
Superposition solution for minority carrier current in the emitter of bipolar devices
|
Alcubilla, R.
|
|
1992
|
35 |
4 |
p. 529-533
5 p.
|
artikel
|
| 22 |
The polarity, field and fluence dependence of interface trap generation in thin silicon oxide
|
Dumin, D.J.
|
|
1992
|
35 |
4 |
p. 515-522
8 p.
|
artikel
|
| 23 |
Transit time of fast bipolar transistors at high collector-current densities
|
Weng, J.
|
|
1992
|
35 |
4 |
p. 599-610
12 p.
|
artikel
|
| 24 |
Transport coefficients for a silicon hydrodynamic model extracted from inhomogeneous Monte-Carlo calculations
|
Lee, Shin-Chi
|
|
1992
|
35 |
4 |
p. 561-569
9 p.
|
artikel
|
| 25 |
Twin-MOSFET structure for suppression of kink and parasitic bipolar effects in SOI MOSFETs at room and liquid helium temperatures
|
Gao, Minghui
|
|
1992
|
35 |
4 |
p. 505-512
8 p.
|
artikel
|
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