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                             25 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Analytical expressions for the drift velocity of hot charge carriers in silicon Shukla, S.R.
1992
35 4 p. 593-597
5 p.
artikel
2 A new GaAs switching device with double-confinement-collector structure Liu, Wen-Chau
1992
35 4 p. 501-504
4 p.
artikel
3 Announcement 1992
35 4 p. I-
1 p.
artikel
4 A simplified model for the distributed base contact impedance in heterojunction bipolar transistors Liu, William
1992
35 4 p. 547-552
6 p.
artikel
5 Collector-emitter offset voltage in single- and double-base InGaAs(P)/InP heterojunction bipolar transistors Chen, S.C.
1992
35 4 p. 553-560
8 p.
artikel
6 Derivation of the emitter-collector transit time of heterojunction bipolar transistors Liu, William
1992
35 4 p. 541-545
5 p.
artikel
7 Editorial: Software survey section 1992
35 4 p. III-V
nvt p.
artikel
8 Efficient charge control model for pseudomorphic and strained high electron mobility transistors on GaAs and InP substrates Halkias, G.
1992
35 4 p. 459-465
7 p.
artikel
9 Formation of shallow p + n junctions by implanting BF2 − ions into thin cobalt films on silicon substrates Juang, M.H.
1992
35 4 p. 453-457
5 p.
artikel
10 Gavels, a velocity-space GaAs transport model—II. Velocity overshoot simulation Dunn, Douglas E.
1992
35 4 p. 477-481
5 p.
artikel
11 Gavels, a velocity-space GaAs transport model—I. Steady-state simulation Dunn, Douglas E.
1992
35 4 p. 467-475
9 p.
artikel
12 Growth and characterization of high-quality GaInAsSb layers on GaSb substrates by liquid-phase epitaxy Wu, Meng-Chyi
1992
35 4 p. 523-528
6 p.
artikel
13 Implementation of heterojunctions into the 2-D finite-element simulator prism: Some scaling considerations Vankemmel, R.
1992
35 4 p. 571-578
8 p.
artikel
14 I–V characteristics of an optically controlled Si-MESFET Chakrabarti, P.
1992
35 4 p. 587-592
6 p.
artikel
15 Low-frequency noise as a tool for characterization of near-band impurities in silicon Scholz, F.J.
1992
35 4 p. 447-452
6 p.
artikel
16 Modeling of the source resistance in modulation-doped FETs Fu, S.T.
1992
35 4 p. 489-499
11 p.
artikel
17 Modeling the base current of an a-Si:H/c-Si heterojunction bipolar transistor Bonnaud, O.
1992
35 4 p. 483-488
6 p.
artikel
18 Numerical studies of thermal effects on heterojunction bipolar transistor current-voltage characteristics using one-dimensional simulation Liou, L.L.
1992
35 4 p. 579-585
7 p.
artikel
19 On the role of fluorine in BF2 + implanted silicon Virdi, G.S.
1992
35 4 p. 535-540
6 p.
artikel
20 Relationship between measured and intrinsic transconductances for FETs with gate conduction Chen, Q.
1992
35 4 p. 513-514
2 p.
artikel
21 Superposition solution for minority carrier current in the emitter of bipolar devices Alcubilla, R.
1992
35 4 p. 529-533
5 p.
artikel
22 The polarity, field and fluence dependence of interface trap generation in thin silicon oxide Dumin, D.J.
1992
35 4 p. 515-522
8 p.
artikel
23 Transit time of fast bipolar transistors at high collector-current densities Weng, J.
1992
35 4 p. 599-610
12 p.
artikel
24 Transport coefficients for a silicon hydrodynamic model extracted from inhomogeneous Monte-Carlo calculations Lee, Shin-Chi
1992
35 4 p. 561-569
9 p.
artikel
25 Twin-MOSFET structure for suppression of kink and parasitic bipolar effects in SOI MOSFETs at room and liquid helium temperatures Gao, Minghui
1992
35 4 p. 505-512
8 p.
artikel
                             25 gevonden resultaten
 
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