| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Accounting for bandstructure effects in the hydrodynamic model: A first-order approach for silicon device simulation
|
Bordelon, T.J.
|
|
1992
|
35 |
2 |
p. 131-139
9 p.
|
article
|
| 2 |
A new method to measure fast defect transients in semiconductor and/or insulator samples
|
Dózsa, László
|
|
1992
|
35 |
2 |
p. 228-230
3 p.
|
article
|
| 3 |
A point-by-point multiple-sweep numerical algorithm for dopant profiling based on C-V data
|
Fu, X.H.
|
|
1992
|
35 |
2 |
p. 181-185
5 p.
|
article
|
| 4 |
A study of defects induced in GaAs by plasma etching
|
He, L.
|
|
1992
|
35 |
2 |
p. 151-156
6 p.
|
article
|
| 5 |
A technical formula for determining the insulator capacitance in a MOS structure
|
Majkusiak, Bogdan
|
|
1992
|
35 |
2 |
p. 223-224
2 p.
|
article
|
| 6 |
Characterization of planar ohmic contacts—The effect of position of probes on contact area
|
Porges, M.
|
|
1992
|
35 |
2 |
p. 157-158
2 p.
|
article
|
| 7 |
Determination of the profile of the bulk generation lifetime from pulsed MOS-C transients
|
Zhang, Xiumiao
|
|
1992
|
35 |
2 |
p. 207-211
5 p.
|
article
|
| 8 |
Effects of base-emitter junction on the resonant tunneling bipolar transistor with double barriers in teh emitter
|
Wei, Houng-Chi
|
|
1992
|
35 |
2 |
p. 159-164
6 p.
|
article
|
| 9 |
First international symposium on ultra clean processing of silicon surfaces (UCPSS '92)
|
|
|
1992
|
35 |
2 |
p. II-
1 p.
|
article
|
| 10 |
Improved balance equations for modeling non-stationary transport and the electron distribution function in GaAs
|
Hintz, A.
|
|
1992
|
35 |
2 |
p. 165-180
16 p.
|
article
|
| 11 |
Influence of series resistances and interface coupling on the transconductance of fully-depleted silicon-on-insulator MOSFETs
|
Ouisse, Thierry
|
|
1992
|
35 |
2 |
p. 141-149
9 p.
|
article
|
| 12 |
Investigation of heterostructure-confinement-emitter transistors
|
Lour, Wen-Shiung
|
|
1992
|
35 |
2 |
p. 117-124
8 p.
|
article
|
| 13 |
Junction breakdown analysis of a floating field-limiting ring structure using a pisces-2B device simulator
|
Ma, Terry S.
|
|
1992
|
35 |
2 |
p. 201-205
5 p.
|
article
|
| 14 |
Modelling of velocity overshoot in submicron semiconductor devices
|
Ibrahim, A.M.
|
|
1992
|
35 |
2 |
p. 221-222
2 p.
|
article
|
| 15 |
MOS controlled current interruption
|
Huang, Qin
|
|
1992
|
35 |
2 |
p. 187-191
5 p.
|
article
|
| 16 |
Numerical simulation for estimating C-V characteristics of MODFETs under illumination
|
Chakrabarti, P.
|
|
1992
|
35 |
2 |
p. 225-227
3 p.
|
article
|
| 17 |
Power amplifier for ultra high frequency using conventional silicon NMOS IC technology
|
Johansson, T.
|
|
1992
|
35 |
2 |
p. 213-220
8 p.
|
article
|
| 18 |
Software survey section
|
|
|
1992
|
35 |
2 |
p. III-VII
nvt p.
|
article
|
| 19 |
50th annual device research conference
|
|
|
1992
|
35 |
2 |
p. I-
1 p.
|
article
|
| 20 |
Two-dimensional model of impurity diffusion in polysilicon-silicon structures
|
Sadovnikov, A.D.
|
|
1992
|
35 |
2 |
p. 193-200
8 p.
|
article
|
| 21 |
Unified apparent bandgap narrowing in n- and p-type silicon
|
Klaassen, D.B.M.
|
|
1992
|
35 |
2 |
p. 125-129
5 p.
|
article
|
Journal description