| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A common-gate CMOS inverter with n-channel amorphous silicon thin-film transistor formed on a crystalline PMOSFET
|
Lin, Heng-Chih
|
|
1992
|
35 |
12 |
p. 1709-1712
4 p.
|
artikel
|
| 2 |
A model for low frequency excess noise in Si-JFETs at low bias
|
Ng, Sze-Him
|
|
1992
|
35 |
12 |
p. 1803-1809
7 p.
|
artikel
|
| 3 |
An accurate method of determining MOSFET gate overlap capacitance
|
Arora, Narain D.
|
|
1992
|
35 |
12 |
p. 1817-1822
6 p.
|
artikel
|
| 4 |
Analysis of the dependence of the subthreshold swing and the threshold voltage on the substrate voltage of thin-film SOI MOSFETs. Extraction of the interface state densities
|
Balestra, F.
|
|
1992
|
35 |
12 |
p. 1783-1786
4 p.
|
artikel
|
| 5 |
A new method for estimating the electron concentration in the 2-dimensional electron gas in MODFETs
|
Zhou, Haosheng
|
|
1992
|
35 |
12 |
p. 1779-1782
4 p.
|
artikel
|
| 6 |
A non-destructive method to determine impurity-profiles in non-abrupt p-n junctions with deep levels
|
Jimenez-Tejada, J.A.
|
|
1992
|
35 |
12 |
p. 1729-1736
8 p.
|
artikel
|
| 7 |
A novel algorithm for higher order filtering in DLTS
|
Thurzo, I.
|
|
1992
|
35 |
12 |
p. 1737-1743
7 p.
|
artikel
|
| 8 |
A novel technique of analyzing multiexponential transients for DLTS spectra
|
Wang, C.W.
|
|
1992
|
35 |
12 |
p. 1771-1777
7 p.
|
artikel
|
| 9 |
Approximation of the gaussian implanted profile by a rectangular profile
|
Grňo, J.
|
|
1992
|
35 |
12 |
p. 1833-1835
3 p.
|
artikel
|
| 10 |
A quasi-3D analytical threshold voltage model of small geometry MOSFETs
|
Lahiri, S.K.
|
|
1992
|
35 |
12 |
p. 1721-1727
7 p.
|
artikel
|
| 11 |
A simple microwave method for monitoring the conductivity of semiconductor epitaxial layers
|
Nag, B.R.
|
|
1992
|
35 |
12 |
p. 1823-1826
4 p.
|
artikel
|
| 12 |
Comparison of -MOSFET lifetime estimates based on GIDL enhancement and transconductance degradation as criteria
|
Joshi, A.B.
|
|
1992
|
35 |
12 |
p. 1757-1760
4 p.
|
artikel
|
| 13 |
Conductance fluctuations in solids caused by defect migration
|
Orlov, V.B.
|
|
1992
|
35 |
12 |
p. 1827-1832
6 p.
|
artikel
|
| 14 |
Correlation between trap characterisation by low frequency noise, mutual conductance dispersion, oscillations and DLTS in GaAs MESFETs
|
Abdala, M.A.
|
|
1992
|
35 |
12 |
p. 1713-1719
7 p.
|
artikel
|
| 15 |
Current reversals in p−n−p transistors
|
Jang, Sheng-Lyang
|
|
1992
|
35 |
12 |
p. 1787-1793
7 p.
|
artikel
|
| 16 |
Editorial: Software survey section
|
|
|
1992
|
35 |
12 |
p. I-III
nvt p.
|
artikel
|
| 17 |
Elimination of stress induced oxide leakage in textured tunneling oxide
|
Rofan, Reza
|
|
1992
|
35 |
12 |
p. 1843-1844
2 p.
|
artikel
|
| 18 |
Interference type amplifier using intermodal interference in potential channel structures
|
Rahman, K.M.
|
|
1992
|
35 |
12 |
p. 1841-1842
2 p.
|
artikel
|
| 19 |
List of contents and author index
|
|
|
1992
|
35 |
12 |
p. i-xxiv
nvt p.
|
artikel
|
| 20 |
Novel high-voltage silicon-on-insulator MOSFETs
|
Lu, Qin
|
|
1992
|
35 |
12 |
p. 1745-1750
6 p.
|
artikel
|
| 21 |
Optimum emitter parameters for maximum gain in uniformly doped NPN and PNP bipolar transistors
|
Paldus, B.
|
|
1992
|
35 |
12 |
p. 1836-1840
5 p.
|
artikel
|
| 22 |
Simulation and analysis of amorphous silicon image sensor having a p−i−n structure
|
Su, C.-Y.
|
|
1992
|
35 |
12 |
p. 1811-1816
6 p.
|
artikel
|
| 23 |
Simulation of ultra thin film SOI transistors using a non-local ballistic model for impact ionisation
|
Armstrong, G.A.
|
|
1992
|
35 |
12 |
p. 1761-1770
10 p.
|
artikel
|
| 24 |
Theory of field enhanced non-equilibrium transients in MIS devices under a linear voltage sweep
|
Zhang, Xiumiao
|
|
1992
|
35 |
12 |
p. 1751-1755
5 p.
|
artikel
|
| 25 |
The use of generalised models to explain the behaviour of ohmic contacts to n-type GaAs
|
McNally, Patrick J.
|
|
1992
|
35 |
12 |
p. 1705-1708
4 p.
|
artikel
|
| 26 |
Unified MOSFET model
|
Shur, M.
|
|
1992
|
35 |
12 |
p. 1795-1802
8 p.
|
artikel
|
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