| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A back-gate bias effect model considering the charge accumulation behavior above the field oxide for ultra-thin SOI NMOS devices
|
Sim, J.H.
|
|
1992
|
35 |
11 |
p. 1655-1659
5 p.
|
artikel
|
| 2 |
A model for the field and temperature dependence of Shockley-Read-Hall lifetimes in silicon
|
Schenk, A.
|
|
1992
|
35 |
11 |
p. 1585-1596
12 p.
|
artikel
|
| 3 |
A new description of dual γ-factor threshold voltage with continuous second-order derivative
|
Smedes, T.
|
|
1992
|
35 |
11 |
p. 1649-1653
5 p.
|
artikel
|
| 4 |
An improved technique for the determination of solar cell parameters
|
Datta, Swapan K.
|
|
1992
|
35 |
11 |
p. 1667-1673
7 p.
|
artikel
|
| 5 |
A study of the interfacial layer of Al and Al(1% Si)Si contacts using a zero-layer ellipsometry model
|
Chao, Tien Sheng
|
|
1992
|
35 |
11 |
p. 1579-1584
6 p.
|
artikel
|
| 6 |
A study of turn-off limitations and failure mechanisms of GTO thyristors by means of 2-D time-resolved optical measurements
|
Bleichner, H.
|
|
1992
|
35 |
11 |
p. 1683-1695
13 p.
|
artikel
|
| 7 |
Current-voltage characteristics of submicrom GaAs MESFETs with nonuniform channel doping profiles
|
Shih, Ko-Ming
|
|
1992
|
35 |
11 |
p. 1639-1644
6 p.
|
artikel
|
| 8 |
Deep level domain spectroscopy of low frequency oscillations in semi-insulating InP
|
Backhouse, C.
|
|
1992
|
35 |
11 |
p. 1601-1607
7 p.
|
artikel
|
| 9 |
Design and analysis of silicon bipolar transistors for low temperature operation
|
Zheng, Jiang
|
|
1992
|
35 |
11 |
p. 1697-1703
7 p.
|
artikel
|
| 10 |
Editorial: Software survey section
|
|
|
1992
|
35 |
11 |
p. I-III
nvt p.
|
artikel
|
| 11 |
Effective lateral diffusion length in Npn AlGaAs/GaAs heterojunction bipolar transistors
|
Liu, William
|
|
1992
|
35 |
11 |
p. 1567-1572
6 p.
|
artikel
|
| 12 |
Influence of U.V. radiation and source-to-bulk bias on the processes in the SiSiO2 inversion channel
|
Kassabov, J.
|
|
1992
|
35 |
11 |
p. 1621-1627
7 p.
|
artikel
|
| 13 |
Investigation of N +-P diffused junction silicon solar cells
|
Zhang, Xiumiao
|
|
1992
|
35 |
11 |
p. 1661-1665
5 p.
|
artikel
|
| 14 |
Negative bias instability in silicon dioxide films grown using oxidise-etch-oxidise process
|
Rai, B.P.
|
|
1992
|
35 |
11 |
p. 1645-1647
3 p.
|
artikel
|
| 15 |
Numerical simulation and experimental verification of the parameters determining the base current in an a-Si : H/c-Si emitter-base heterojunction bipolar transistor
|
Solhi, A.
|
|
1992
|
35 |
11 |
p. 1609-1620
12 p.
|
artikel
|
| 16 |
On barrier height inhomogeneities at polycrystalline metal-semiconductor contacts
|
Osvald, J.
|
|
1992
|
35 |
11 |
p. 1629-1632
4 p.
|
artikel
|
| 17 |
Quantum well geometrical effects on two-dimensional electron mobility
|
Wang, Tahui
|
|
1992
|
35 |
11 |
p. 1597-1599
3 p.
|
artikel
|
| 18 |
Ramp recovery in p-i-n diodes: General mathematical formulation and comparison with other methods of lifetime measurement
|
Dhariwal, S.R.
|
|
1992
|
35 |
11 |
p. 1675-1682
8 p.
|
artikel
|
| 19 |
Reciprocity in heterojunction bipolar transistors
|
St. Denis, A.
|
|
1992
|
35 |
11 |
p. 1633-1637
5 p.
|
artikel
|
| 20 |
Theoretical comparison of donor-density graded base and uniformly doped base in Pnp AlGaAs/GaAs heterojunction bipolar transistors
|
Liu, William
|
|
1992
|
35 |
11 |
p. 1573-1577
5 p.
|
artikel
|
Tijdschrift beschrijving