| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A “ballistic” analog memory device for neural network implementation
|
Morie, Takashi
|
|
1991
|
34 |
8 |
p. 919-920
2 p.
|
artikel
|
| 2 |
A bipolar photodetector compatible with standard CMOS technology
|
Vidal, M.Puig
|
|
1991
|
34 |
8 |
p. 809-814
6 p.
|
artikel
|
| 3 |
A charge-based small-signal model for the bipolar junction transistor
|
Jo, Myungsuk
|
|
1991
|
34 |
8 |
p. 893-901
9 p.
|
artikel
|
| 4 |
A microscopic-stochastic model for minority carrier transport in small bipolar transistors
|
Pan, Y.
|
|
1991
|
34 |
8 |
p. 903-909
7 p.
|
artikel
|
| 5 |
A model for electromigration and low-frequency noise in thin metal films
|
Yang, Wiyi
|
|
1991
|
34 |
8 |
p. 911-916
6 p.
|
artikel
|
| 6 |
An analysis for the assessment of position distortion for fast excitation in two-dimensional position-sensitive devices (PSDs)
|
Dutta, Achyut Kumar
|
|
1991
|
34 |
8 |
p. 875-882
8 p.
|
artikel
|
| 7 |
A new approach to the hooge noise parameter for 1/ƒ noise in semiconductors
|
Tacano, Munecazu
|
|
1991
|
34 |
8 |
p. 917-918
2 p.
|
artikel
|
| 8 |
A new “double carrier” analytical model of carriers transport in p-i-n amorphous silicon solar cells
|
Irrera, Fernanda
|
|
1991
|
34 |
8 |
p. 801-808
8 p.
|
artikel
|
| 9 |
A self-aligned GaAs MESFET process with WSi gates for analog and digital applications
|
Grave, T.
|
|
1991
|
34 |
8 |
p. 861-866
6 p.
|
artikel
|
| 10 |
A three-dimensional device simulator for radiation-hard MOS-SOS transistors
|
Rios, Rafael
|
|
1991
|
34 |
8 |
p. 853-859
7 p.
|
artikel
|
| 11 |
Call for papers
|
|
|
1991
|
34 |
8 |
p. I-II
nvt p.
|
artikel
|
| 12 |
Comment on “A study of base built-in field effects on the steady-state current gain of heterojunction bipolar transistors”
|
McGregor, J.
|
|
1991
|
34 |
8 |
p. 927-
1 p.
|
artikel
|
| 13 |
Comments on the paper “Coupling capacitances in VLSI circuits calculated by multi-dimensional discrete fourier-series”
|
Axelrad, V.
|
|
1991
|
34 |
8 |
p. 925-
1 p.
|
artikel
|
| 14 |
Corrigendum
|
|
|
1991
|
34 |
8 |
p. 931-
1 p.
|
artikel
|
| 15 |
Heteroepitaxial growth of gallium antimonide on GaAs by low pressure MOVPE
|
Su, Y.K.
|
|
1991
|
34 |
8 |
p. 815-819
5 p.
|
artikel
|
| 16 |
Interface reactions in LPE grown InGaAsP/InP ridge waveguide laser diodes during aging?
|
Beister, G.
|
|
1991
|
34 |
8 |
p. 883-888
6 p.
|
artikel
|
| 17 |
Investigation of the CaF2/p-type Si(100) interface by conductance and deep level transient spectroscopy
|
Couturier, G.
|
|
1991
|
34 |
8 |
p. 867-873
7 p.
|
artikel
|
| 18 |
Liquid-phase epitaxial growth of InGaP for red electroluminescent devices
|
Lu, Shoei-Chyuan
|
|
1991
|
34 |
8 |
p. 843-851
9 p.
|
artikel
|
| 19 |
Properties of the fluorine-implanted Si-SiO2 system
|
Virdi, G.S.
|
|
1991
|
34 |
8 |
p. 889-892
4 p.
|
artikel
|
| 20 |
Response to “Comment on ‘A study of base built-in field effects on the steady-state current gain of heterojunction bipolar transistors’”
|
Liou, J.J.
|
|
1991
|
34 |
8 |
p. 928-929
2 p.
|
artikel
|
| 21 |
Response to “Comments on the paper ‘Coupling capacitances in VLSI Circuits calculated by multi-dimensional discrete fourier-series’”
|
Lai, F.S.
|
|
1991
|
34 |
8 |
p. 926-
1 p.
|
artikel
|
| 22 |
Simultaneous extraction of hole barrier height and interfacial oxide thickness of polysilicon-emitter bipolar transistors
|
Purbo, O.W.
|
|
1991
|
34 |
8 |
p. 821-826
6 p.
|
artikel
|
| 23 |
Software survey section
|
|
|
1991
|
34 |
8 |
p. III-VI
nvt p.
|
artikel
|
| 24 |
Spin-dependent Shockley-read recombination of electrons and holes in indirect-band-gap semiconductor p-n junction diodes
|
Rong, F.C.
|
|
1991
|
34 |
8 |
p. 835-841
7 p.
|
artikel
|
| 25 |
Temperature dependence of double negative-differential resistance of a superlattice-emitter transistor
|
Liu, Wen-Chau
|
|
1991
|
34 |
8 |
p. 921-923
3 p.
|
artikel
|
| 26 |
Titanium silicide/p-Si Schottky barriers formed by rapid thermal processing in nitrogen
|
De Bosscher, W.
|
|
1991
|
34 |
8 |
p. 827-834
8 p.
|
artikel
|
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