| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A GaAs integrated differential amplifier for operation up to 300°C
|
Schweeger, G.
|
|
1991
|
34 |
7 |
p. 731-733
3 p.
|
artikel
|
| 2 |
AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) prepared by molecular beam epitaxy
|
Liu, Wen-Chau
|
|
1991
|
34 |
7 |
p. 717-722
6 p.
|
artikel
|
| 3 |
Announcement
|
|
|
1991
|
34 |
7 |
p. i-
1 p.
|
artikel
|
| 4 |
A study of heat generation processes in semiconductor devices
|
De, S.S.
|
|
1991
|
34 |
7 |
p. 795-797
3 p.
|
artikel
|
| 5 |
Bipolar transistor design for improved low current performance
|
Parker, James R.
|
|
1991
|
34 |
7 |
p. 701-707
7 p.
|
artikel
|
| 6 |
Characterisation of low temperature poly-Si thin film transistors
|
Brotherton, S.D.
|
|
1991
|
34 |
7 |
p. 671-679
9 p.
|
artikel
|
| 7 |
Characterization of the thermal behaviour in ICs
|
Curatelli, F.
|
|
1991
|
34 |
7 |
p. 751-760
10 p.
|
artikel
|
| 8 |
Determination of silicon power diode recombination parameters by combining open circuit voltage decay and storage time-reverse recovery data
|
Di Zitti, Ermanno
|
|
1991
|
34 |
7 |
p. 771-780
10 p.
|
artikel
|
| 9 |
Determination of tunnel-generation rate from GaAs pin-structures
|
Gaul, L.
|
|
1991
|
34 |
7 |
p. 723-726
4 p.
|
artikel
|
| 10 |
Effects of hydrogenation on the electrical characteristics of Ni/n-Si(111) Schottky diodes
|
Sahay, P.P.
|
|
1991
|
34 |
7 |
p. 727-729
3 p.
|
artikel
|
| 11 |
Electrical characteristics of InSb-GaAs heterojunctions
|
Chyi, J.-I.
|
|
1991
|
34 |
7 |
p. 747-750
4 p.
|
artikel
|
| 12 |
Electrical characterization of metal/n-gallium antimonide (110) interfaces
|
Walters, S.A.
|
|
1991
|
34 |
7 |
p. 798-800
3 p.
|
artikel
|
| 13 |
Electrical properties of silicon dioxide films grown by inductively coupled R.F. plasma anodization
|
Choksi, A.J.
|
|
1991
|
34 |
7 |
p. 765-770
6 p.
|
artikel
|
| 14 |
Improvement of hot-carrier resistance and radiation hardness of nMOSFETs by irradiation-then-anneal treatments
|
Chang-Liao, Kuei-Shu
|
|
1991
|
34 |
7 |
p. 761-764
4 p.
|
artikel
|
| 15 |
Investigation of GaAs MESFET equivalent circuits using transient current-continuity equation solutions
|
Anholt, R.
|
|
1991
|
34 |
7 |
p. 693-700
8 p.
|
artikel
|
| 16 |
On the electrical properties of the AlIn x P y O z-InP interface
|
Torii, Y.
|
|
1991
|
34 |
7 |
p. 781-785
5 p.
|
artikel
|
| 17 |
Optimization of process parameters for fast-switching thyristors
|
Das, N.C.
|
|
1991
|
34 |
7 |
p. 709-715
7 p.
|
artikel
|
| 18 |
Software survey section
|
|
|
1991
|
34 |
7 |
p. I-III
nvt p.
|
artikel
|
| 19 |
The fabrication and study of InGaAsP/InP double-collector heterojunction bipolar transistors
|
Chen, Shih-Chih
|
|
1991
|
34 |
7 |
p. 787-794
8 p.
|
artikel
|
| 20 |
The shifted-rectangle approximation for simplifying the analysis of ion-implanted MOSFETs and MESFETs
|
Karmalkar, S.
|
|
1991
|
34 |
7 |
p. 681-692
12 p.
|
artikel
|
| 21 |
Use of microwave photoconductivity to measure semiconductor properties
|
Wang, Zongxin
|
|
1991
|
34 |
7 |
p. 735-740
6 p.
|
artikel
|
| 22 |
Voids associated with electromigration in metal lines
|
Milnes, A.G.
|
|
1991
|
34 |
7 |
p. 741-746
6 p.
|
artikel
|
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