| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A hybrid finite-element/particle-simulation method for the analysis of semiconductor transients and bipolar transport
|
Martin, R.C.
|
|
1991
|
34 |
6 |
p. 573-581
9 p.
|
artikel
|
| 2 |
Analysis of the high-frequency performance of high-T c superconducting-base hot-electron transistors
|
Hashimoto, Katsufumi
|
|
1991
|
34 |
6 |
p. 629-633
5 p.
|
artikel
|
| 3 |
Analytical two-dimensional model of solar cell current-voltage characteristics
|
Caldararu, F.
|
|
1991
|
34 |
6 |
p. 553-558
6 p.
|
artikel
|
| 4 |
An evaluation of energy transport models for silicon device simulation
|
Bordelon, T.J.
|
|
1991
|
34 |
6 |
p. 617-628
12 p.
|
artikel
|
| 5 |
A new methodology for developing a fast two-dimensional MOSFET device simulator
|
Perng, Ruey-Kuen
|
|
1991
|
34 |
6 |
p. 635-647
13 p.
|
artikel
|
| 6 |
Announcements
|
|
|
1991
|
34 |
6 |
p. I-
1 p.
|
artikel
|
| 7 |
A quantum well δ-doped GaAs FET fabricated by low-pressure metal organic chemical vapor deposition
|
Hsu, W.C.
|
|
1991
|
34 |
6 |
p. 649-653
5 p.
|
artikel
|
| 8 |
A study of the effect of interband tunneling current on the R 0 A product of Hg1−x Cd xTe photodiodes
|
Chakraborty, P.K.
|
|
1991
|
34 |
6 |
p. 665-666
2 p.
|
artikel
|
| 9 |
A study of the temperature dependence of NiCr thin film resistors
|
Peled, A.
|
|
1991
|
34 |
6 |
p. 667-670
4 p.
|
artikel
|
| 10 |
Calculation of effective band gap narrowing in heavily-doped and compensated silicon
|
Polsky, B.S.
|
|
1991
|
34 |
6 |
p. 583-586
4 p.
|
artikel
|
| 11 |
Charge trapping and retention in ultra-thin oxide-nitride-oxide structures
|
Olivo, P.
|
|
1991
|
34 |
6 |
p. 609-611
3 p.
|
artikel
|
| 12 |
Comparison of symmetrical and asymmetrical hot-electron injection in MOS transistors
|
Booth, Richard
|
|
1991
|
34 |
6 |
p. 599-604
6 p.
|
artikel
|
| 13 |
High-frequency capacitance-voltage characteristics of amorphous (undoped)/crystalline silicon heterostructures
|
Iyer, Suman B.
|
|
1991
|
34 |
6 |
p. 535-543
9 p.
|
artikel
|
| 14 |
InP/InGaAs DHBTs for high frequency and high speed ECL circuits using a submicron-model
|
Ouacha, A.
|
|
1991
|
34 |
6 |
p. 565-571
7 p.
|
artikel
|
| 15 |
Interaction of hot electrons with two-dimensional gas in semiconductor superlattices
|
Burtyka, M.V.
|
|
1991
|
34 |
6 |
p. 559-564
6 p.
|
artikel
|
| 16 |
Numerical simulations of the capacitance of forward-biased Schottky-diodes
|
Hjelmgren, Hans
|
|
1991
|
34 |
6 |
p. 587-590
4 p.
|
artikel
|
| 17 |
Physically-based models for effective mobility and local-field mobility of electrons in MOS inversion layers
|
Shin, H.
|
|
1991
|
34 |
6 |
p. 545-552
8 p.
|
artikel
|
| 18 |
Physical mechanism of the “reverse short-channel effect” in MOS transistors
|
Hsu, S.T.
|
|
1991
|
34 |
6 |
p. 605-608
4 p.
|
artikel
|
| 19 |
Preparation of a Pt-GaAs Schottky contact by ion plating
|
Petó, G.
|
|
1991
|
34 |
6 |
p. 591-592
2 p.
|
artikel
|
| 20 |
Selfconsistent Monte Carlo comparison of submicrometer GaAs and Si MESFETs
|
Lapushkin, I.Yu.
|
|
1991
|
34 |
6 |
p. 663-664
2 p.
|
artikel
|
| 21 |
Software survey section
|
|
|
1991
|
34 |
6 |
p. III-VIII
nvt p.
|
artikel
|
| 22 |
Special Issue on solid-state device and material mesurements
|
|
|
1991
|
34 |
6 |
p. i-
1 p.
|
artikel
|
| 23 |
Stacked Si-bipolar diodes with lateral polycrystalline inter-connections grown by two-step MBE
|
König, U.
|
|
1991
|
34 |
6 |
p. 655-661
7 p.
|
artikel
|
| 24 |
The base-collector heterojunction effect in SiGe-base bipolar transistors
|
Ugajin, Mamoru
|
|
1991
|
34 |
6 |
p. 593-598
6 p.
|
artikel
|
| 25 |
The remote-base transistor biasing scheme of a thyristor for three-terminal measurement of base parameters
|
Karmalkar, S.
|
|
1991
|
34 |
6 |
p. 613-615
3 p.
|
artikel
|
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