| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An analytical model for current-voltage characteristics of quantum-well heterojunction field-effect transistors
|
Yu, David C.
|
|
1991
|
34 |
5 |
p. 467-479
13 p.
|
artikel
|
| 2 |
A new method to fabricate Au/n-type InP Schottky contacts with an interfacial layer
|
Hattori, K.
|
|
1991
|
34 |
5 |
p. 527-531
5 p.
|
artikel
|
| 3 |
Announcement
|
|
|
1991
|
34 |
5 |
p. I-
1 p.
|
artikel
|
| 4 |
A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and Ge x Si1−x strained layers
|
Jain, S.C.
|
|
1991
|
34 |
5 |
p. 453-465
13 p.
|
artikel
|
| 5 |
A unified four-terminal JFET static model for circuit simulation
|
Wong, W.W.
|
|
1991
|
34 |
5 |
p. 437-443
7 p.
|
artikel
|
| 6 |
Current-voltage-time characteristics of aluminum/polyimide/p +-silicon structures
|
Ranade, R.M.
|
|
1991
|
34 |
5 |
p. 521-525
5 p.
|
artikel
|
| 7 |
Dependence of GaAs MESFET fringe capacitances on fabrication technologies
|
Anholt, R.
|
|
1991
|
34 |
5 |
p. 515-520
6 p.
|
artikel
|
| 8 |
Editorial — Software survey section
|
|
|
1991
|
34 |
5 |
p. II-IV
nvt p.
|
artikel
|
| 9 |
Electrical conduction in MOS capacitors with an ultra-thin oxide layer
|
Kassmi, K.
|
|
1991
|
34 |
5 |
p. 509-514
6 p.
|
artikel
|
| 10 |
Modeling of junction capacitances of graded base heterojunction bipolar transistors
|
Ryum, Byung R.
|
|
1991
|
34 |
5 |
p. 481-488
8 p.
|
artikel
|
| 11 |
Modeling of temperature-dependent avalanche currents in advanced bipolar transistors
|
Yuan, J.S.
|
|
1991
|
34 |
5 |
p. 533-534
2 p.
|
artikel
|
| 12 |
New series representation of Fermi-Dirac integral F j (− ∞ < a ⪡ ∞) for arbitrary j > −1, and its effect on F j (a ⩾ 0+) for integer j ⩾ 0
|
Van Cong, Huynh
|
|
1991
|
34 |
5 |
p. 489-492
4 p.
|
artikel
|
| 13 |
The combined effects of strain and heavy doping on the indirect band gap of Si and Ge x Si1−x alloys
|
Jain, S.C.
|
|
1991
|
34 |
5 |
p. 445-451
7 p.
|
artikel
|
| 14 |
Three-dimensional numerical modeling of hall plates in inhomogeneous magnetic fields
|
Neudecker, J.
|
|
1991
|
34 |
5 |
p. 429-436
8 p.
|
artikel
|
| 15 |
Trench DMOS transistor technology for high-current (100 A range) switching
|
Bulucea, Constantin
|
|
1991
|
34 |
5 |
p. 493-507
15 p.
|
artikel
|
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