| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AC sidegating through semi-insulating gallium arsenide
|
Shulman, D.
|
|
1991
|
34 |
4 |
p. 379-383
5 p.
|
artikel
|
| 2 |
Announcement
|
|
|
1991
|
34 |
4 |
p. I-
1 p.
|
artikel
|
| 3 |
A physics-based analytical/numerical solution to the Boltzmann transport equation for use in device simulation
|
Goldsman, Neil
|
|
1991
|
34 |
4 |
p. 389-396
8 p.
|
artikel
|
| 4 |
A simple C-V method for measuring minority lifetime of nonuniformly doped MOS structures
|
Huang, Qing-An
|
|
1991
|
34 |
4 |
p. 419-420
2 p.
|
artikel
|
| 5 |
Bipolar transistor base bandgap grading for minimum delay
|
McGregor, J.M.
|
|
1991
|
34 |
4 |
p. 421-422
2 p.
|
artikel
|
| 6 |
Characteristics of displaced PN- and heterojunctions
|
Xu, J.M.
|
|
1991
|
34 |
4 |
p. 423-425
3 p.
|
artikel
|
| 7 |
Control of barrier height of MIS tunnel diodes using deep level impurities
|
Chattopadhyay, P.
|
|
1991
|
34 |
4 |
p. 367-371
5 p.
|
artikel
|
| 8 |
Editorial — Software survey section
|
|
|
1991
|
34 |
4 |
p. III-V
nvt p.
|
artikel
|
| 9 |
Electrical characteristics of double-barrier resonant tunneling structures with different electrode doping concentrations
|
Wu, J.S.
|
|
1991
|
34 |
4 |
p. 403-411
9 p.
|
artikel
|
| 10 |
Electrical properties of Pd/n-GaSb Schottky contacts
|
Su, Y.K.
|
|
1991
|
34 |
4 |
p. 426-428
3 p.
|
artikel
|
| 11 |
Metal-oxide-semiconductor characteristics of rapid thermal processed chemical vapor deposited SiO2 gate dielectrics
|
Ting, W.
|
|
1991
|
34 |
4 |
p. 385-388
4 p.
|
artikel
|
| 12 |
New physical timing models of bipolar nonsaturation logic using current-domain analysis technique
|
Wu, Chung-Yu
|
|
1991
|
34 |
4 |
p. 351-365
15 p.
|
artikel
|
| 13 |
Observation of N- and S-shaped negative differential resistance behavior in AlGaAs/GaAs resonant tunneling structure
|
Wang, Y.H.
|
|
1991
|
34 |
4 |
p. 413-418
6 p.
|
artikel
|
| 14 |
On the theory of the surface photovoltage technique based on the flat quasi-Fermi level approximation
|
Jang, Sheng-Lyang
|
|
1991
|
34 |
4 |
p. 373-377
5 p.
|
artikel
|
| 15 |
The effect of an interfacial layer on the blocking behaviour of mesa high-voltage power devices passivated by semi-insulating polycrystalline silicon films
|
Burte, Edmund P.
|
|
1991
|
34 |
4 |
p. 345-349
5 p.
|
artikel
|
| 16 |
Theory and applications of 1/ƒ trapping noise in MOSFETs for the whole biasing ranges
|
Fang, Zhi-Hao
|
|
1991
|
34 |
4 |
p. 327-333
7 p.
|
artikel
|
| 17 |
Two-dimensional simulation of GaAs MESFETs with deep acceptors in the semi-insulating substrate
|
Horio, Kazushige
|
|
1991
|
34 |
4 |
p. 335-343
9 p.
|
artikel
|
| 18 |
Two-dimensional simulation of the drain-current transient effect in GaAs MESFETs
|
Lo, S.H.
|
|
1991
|
34 |
4 |
p. 397-401
5 p.
|
artikel
|
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