nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Analysis of several high-electron-mobility-transistor structures by a self-consistent method
|
Liu, D.G. |
|
1991 |
34 |
3 |
p. 253-258 6 p. |
artikel |
2 |
Analysis of thermal characteristics of VDMOS power transistors
|
Li, Z.J. |
|
1991 |
34 |
3 |
p. 225-231 7 p. |
artikel |
3 |
A new approach to CV profiling with sub-Debye-length resolution
|
Iniewski, K. |
|
1991 |
34 |
3 |
p. 309-314 6 p. |
artikel |
4 |
Announcement
|
|
|
1991 |
34 |
3 |
p. I- 1 p. |
artikel |
5 |
Collector-emitter offset voltage in heterojunction bipolar transistors
|
Mazhari, B. |
|
1991 |
34 |
3 |
p. 315-321 7 p. |
artikel |
6 |
Current noise due to generation and recombination of carriers in forward-biased p-n junctions
|
Dai, Yisong |
|
1991 |
34 |
3 |
p. 259-264 6 p. |
artikel |
7 |
Dember IR photodetectors
|
Djuric, Z. |
|
1991 |
34 |
3 |
p. 265-269 5 p. |
artikel |
8 |
Editorial — Software survey section
|
|
|
1991 |
34 |
3 |
p. II-IV nvt p. |
artikel |
9 |
Experimental determination of the internal base sheet resistance of bipolar transistors under forward-bias conditions
|
Rein, H.-M. |
|
1991 |
34 |
3 |
p. 301-308 8 p. |
artikel |
10 |
MIS diodes on n-InP having an improved interface
|
Shi, Z.Q. |
|
1991 |
34 |
3 |
p. 285-289 5 p. |
artikel |
11 |
Simulation of time-dependent tunneling characteristics of MOS structures
|
Ramaswami, R. |
|
1991 |
34 |
3 |
p. 291-299 9 p. |
artikel |
12 |
Specific contact resistance extraction from four-point-probe measurements on multilayered film structures
|
Vu, Quat T. |
|
1991 |
34 |
3 |
p. 279-283 5 p. |
artikel |
13 |
Structural and electrical evolution of the Al/RuO2 interface upon thermal annealing
|
Vu, Quat T. |
|
1991 |
34 |
3 |
p. 271-278 8 p. |
artikel |
14 |
The influence of substrate compensation on inter-electrode leakage and back-gating in GaAs MESFETs
|
George, Peter |
|
1991 |
34 |
3 |
p. 233-252 20 p. |
artikel |
15 |
Universal electric field distribution in the limited p-n junction
|
Kuznicki, Z.T. |
|
1991 |
34 |
3 |
p. 323-325 3 p. |
artikel |