| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A diffusion model of subthreshold current for GaAs MESFETs
|
Liang, C.L.
|
|
1991
|
34 |
2 |
p. 131-138
8 p.
|
artikel
|
| 2 |
A note on current-voltage measurements of n-type and p-type Pd2Si Schottky diodes
|
Chin, Vincent W.L.
|
|
1991
|
34 |
2 |
p. 215-216
2 p.
|
artikel
|
| 3 |
A novel GaAs delta-doping induced triangle-like double-barrier tunneling diode
|
Wang, R.L.
|
|
1991
|
34 |
2 |
p. 223-224
2 p.
|
artikel
|
| 4 |
A problem-specific inverse method for two-dimensional doping profile determination from capacitance-voltage measurements
|
Ouwerling, G.J.L.
|
|
1991
|
34 |
2 |
p. 197-214
18 p.
|
artikel
|
| 5 |
Bias circuit instabilities and their effect on the d.c. current-voltage characteristics of double-barrier resonant tunneling diodes
|
Kidner, C.
|
|
1991
|
34 |
2 |
p. 149-156
8 p.
|
artikel
|
| 6 |
Characterization of electromigration parameters in VLSI metallizations by 1/ƒ noise measurements
|
Çelik-Butler, Zeynep
|
|
1991
|
34 |
2 |
p. 185-188
4 p.
|
artikel
|
| 7 |
Charged-impurity scattering in GaInAs FETs
|
Ridley, B.K.
|
|
1991
|
34 |
2 |
p. 111-116
6 p.
|
artikel
|
| 8 |
Charges and defects in SiO2 films deposited by plasma-enhanced chemical vapor deposition at low temperatures
|
Ip, B.K.
|
|
1991
|
34 |
2 |
p. 123-129
7 p.
|
artikel
|
| 9 |
Editorial - software survey section
|
|
|
1991
|
34 |
2 |
p. I-III
nvt p.
|
artikel
|
| 10 |
Fabrication of a diamond p-n junction diode using the chemical vapour deposition technique
|
Okano, Ken
|
|
1991
|
34 |
2 |
p. 139-141
3 p.
|
artikel
|
| 11 |
1/f noise in quarter-micron filaments of GaAs and InP made by focused ion-beam implantation
|
Tacano, Munecazu
|
|
1991
|
34 |
2 |
p. 193-196
4 p.
|
artikel
|
| 12 |
Hydrogenated amorphous Si/SiC superlattice phototransistors
|
Wu, M.T.
|
|
1991
|
34 |
2 |
p. 189-192
4 p.
|
artikel
|
| 13 |
Improved GaAs MESFET simulation using an enhanced Schottky barrier model
|
McCarthy, K.
|
|
1991
|
34 |
2 |
p. 220-222
3 p.
|
artikel
|
| 14 |
Ohmic contact to n-type bulk and δ doped Al0.3Ga0.7As/GaAs MODFET type heterostructures and its applications
|
Jin, Y.
|
|
1991
|
34 |
2 |
p. 117-121
5 p.
|
artikel
|
| 15 |
Polarity asymmetry of electrical characteristics of thin nitrided polyoxides prepared by in-situ multiple rapid thermal processing
|
Lo, G.Q.
|
|
1991
|
34 |
2 |
p. 181-184
4 p.
|
artikel
|
| 16 |
Revised theory of linearly-graded silicon junctions: An analytical approach
|
Silard, Andrei P.
|
|
1991
|
34 |
2 |
p. 167-172
6 p.
|
artikel
|
| 17 |
Study of interface trap properties in MOSFETs using split-current measurements
|
El-Sayed, Mohamed
|
|
1991
|
34 |
2 |
p. 173-180
8 p.
|
artikel
|
| 18 |
The electrical performance of a complementary CdSe:In/Ge:Cu thin film transistor technology for flat panel displays
|
Doutreloigne, J.
|
|
1991
|
34 |
2 |
p. 143-147
5 p.
|
artikel
|
| 19 |
Theoretical approach to the effect of impurity conduction on thermostimulated conductivity in semi-insulating materials
|
Rakhshani, A.E.
|
|
1991
|
34 |
2 |
p. 157-162
6 p.
|
artikel
|
| 20 |
Thin oxide growth by intermediate annealing process
|
Liu, B.D.
|
|
1991
|
34 |
2 |
p. 217-219
3 p.
|
artikel
|
| 21 |
Three-terminal voltage-controlled GaAs quantum well switching device
|
Liu, Wen-Chau
|
|
1991
|
34 |
2 |
p. 163-166
4 p.
|
artikel
|
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