| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A deterministic particle method for the kinetic model of semiconductors: The homogeneous field model
|
Degond, P.
|
|
1991
|
34 |
12 |
p. 1335-1345
11 p.
|
artikel
|
| 2 |
A high-power short-pulse laser diode for waveguide second harmonic generation
|
Kume, Masahiro
|
|
1991
|
34 |
12 |
p. 1329-1333
5 p.
|
artikel
|
| 3 |
A modified conductance technique for the determination of series resistance of MIS tunnel diodes
|
Chattopadhyay, P.
|
|
1991
|
34 |
12 |
p. 1455-1456
2 p.
|
artikel
|
| 4 |
Analysis of I–V measurements on PtSi-Si Schottky structures in a wide temperature range
|
Donoval, D.
|
|
1991
|
34 |
12 |
p. 1365-1373
9 p.
|
artikel
|
| 5 |
Analysis of the trapping characteristics of silicon dioxide after Fowler-Nordheim degradation
|
Papadas, C.
|
|
1991
|
34 |
12 |
p. 1375-1379
5 p.
|
artikel
|
| 6 |
Analytical modelling of ultra-thin film depletion-mode SOI MOSFETs
|
Balestra, F.
|
|
1991
|
34 |
12 |
p. 1361-1364
4 p.
|
artikel
|
| 7 |
A new resonant-tunneling bipolar transistor with triple-well emitter structure
|
Liu, Wen-Chao
|
|
1991
|
34 |
12 |
p. 1457-1459
3 p.
|
artikel
|
| 8 |
Application of quantum mechanical wave impedance in the solution of Schrodinger's equation in quantum wells
|
Fazlul Kabir, S.M.
|
|
1991
|
34 |
12 |
p. 1466-1468
3 p.
|
artikel
|
| 9 |
A self-consistent analytic threshold voltage model for thin SOI n-channel MOSFETs
|
Choi, Jin-Ho
|
|
1991
|
34 |
12 |
p. 1421-1425
5 p.
|
artikel
|
| 10 |
Breakdown voltage of diffused epitaxial junctions
|
Bulucea, Constantin
|
|
1991
|
34 |
12 |
p. 1313-1318
6 p.
|
artikel
|
| 11 |
Closed-form analytical solutions for avalanche breakdown quantities in high-voltage diffused junctions
|
Liang, Su-Jun
|
|
1991
|
34 |
12 |
p. 1433-1437
5 p.
|
artikel
|
| 12 |
Comments on “An improved model of ‘generation width’ for pulsed MOS C-t transient analysis”
|
Calzolari, P.U.
|
|
1991
|
34 |
12 |
p. 1473-
1 p.
|
artikel
|
| 13 |
Device-circuit mixed simulation of VDMOS charge transients
|
M.A. Ravanelli, Enrico
|
|
1991
|
34 |
12 |
p. 1353-1360
8 p.
|
artikel
|
| 14 |
Editorial: Software survey section
|
|
|
1991
|
34 |
12 |
p. I-III
nvt p.
|
artikel
|
| 15 |
Effect of oxide resistance on the characterization of interface trap density in MOS structures
|
Lin, Jing-Jenn
|
|
1991
|
34 |
12 |
p. 1449-1454
6 p.
|
artikel
|
| 16 |
Effects of using minority hole mobility in n + emitter on bipolar device modeling
|
Yuan, J.S.
|
|
1991
|
34 |
12 |
p. 1460-1462
3 p.
|
artikel
|
| 17 |
Emitter injection and collector current ideality in abrupt heterojunction AlInAs/GaInAs HBTs
|
Ferro, R.J.
|
|
1991
|
34 |
12 |
p. 1319-1324
6 p.
|
artikel
|
| 18 |
Experimental study and modeling of band-to-band tunneling leakage current in thin-oxide MOSFETs
|
Nedev, I.
|
|
1991
|
34 |
12 |
p. 1401-1408
8 p.
|
artikel
|
| 19 |
1/f noise in amorphous silicon and hydrogenated amorphous silicon thin films
|
Baciocchi, M.
|
|
1991
|
34 |
12 |
p. 1439-1447
9 p.
|
artikel
|
| 20 |
GaAs MESFETs with channel-doping variations
|
Abid, Z.
|
|
1991
|
34 |
12 |
p. 1427-1432
6 p.
|
artikel
|
| 21 |
GaAs surface plasma treatments for Schottky contacts
|
Paccagnella, A.
|
|
1991
|
34 |
12 |
p. 1409-1414
6 p.
|
artikel
|
| 22 |
High-performance P-n-p heterojunction bipolar transistor design
|
Yuan, J.S.
|
|
1991
|
34 |
12 |
p. 1347-1352
6 p.
|
artikel
|
| 23 |
Hot-carrier-induced photovoltage in silicon bipolar junction transistors
|
Jang, Sheng-Lyang
|
|
1991
|
34 |
12 |
p. 1387-1392
6 p.
|
artikel
|
| 24 |
List of contents and author index
|
|
|
1991
|
34 |
12 |
p. i-xix
nvt p.
|
artikel
|
| 25 |
Low-temperature degradation studies of AlGaAs/GaAs modulation-doped field effect transistors
|
Kang, Soon-won
|
|
1991
|
34 |
12 |
p. 1415-1419
5 p.
|
artikel
|
| 26 |
On the recombination in the quasi-neutral base of polysilicon emitter transistors with interfacial oxides
|
Wijburg, Rutger C.
|
|
1991
|
34 |
12 |
p. 1469-1471
3 p.
|
artikel
|
| 27 |
Parallel parasitic conductance in narrow-width MOSFETs
|
Zuo, Z.P.
|
|
1991
|
34 |
12 |
p. 1381-1386
6 p.
|
artikel
|
| 28 |
Reply to “Comments on ‘An improved model of “generation width” for pulsed MOS C-t transient analysis‘”
|
Zhang, Xiumiao
|
|
1991
|
34 |
12 |
p. 1474-
1 p.
|
artikel
|
| 29 |
Study of electrical properties of SiO2 grown over plasma-cleaned silicon surfaces
|
Chanana, R.K.
|
|
1991
|
34 |
12 |
p. 1463-1465
3 p.
|
artikel
|
| 30 |
The cut-off frequency of base-graded and junction-graded Al x Ga1−x As DHBTs
|
Ang, Oon-Sim
|
|
1991
|
34 |
12 |
p. 1325-1328
4 p.
|
artikel
|
| 31 |
Two-dimensional analysis of high injection effects in AlGaAs/GaAs HBTs with semi-insulating external collectors
|
Horio, Kazushige
|
|
1991
|
34 |
12 |
p. 1393-1400
8 p.
|
artikel
|
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