| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
a.c. sidegating in GaAs MESFETs
|
Shulman, D.
|
|
1991
|
34 |
11 |
p. 1281-1287
7 p.
|
artikel
|
| 2 |
An extended proof of the Ramo-Shockley theorem
|
Kim, Hunsuk
|
|
1991
|
34 |
11 |
p. 1251-1253
3 p.
|
artikel
|
| 3 |
A p-v-n diode model for CMOS latchup
|
Zappe, Hans P.
|
|
1991
|
34 |
11 |
p. 1275-1279
5 p.
|
artikel
|
| 4 |
Calculation of carrier concentrations and Fermi energies in intrinsic and donor-doped In1 − x Ga xAs
|
Chin, Vincent W.L.
|
|
1991
|
34 |
11 |
p. 1187-1190
4 p.
|
artikel
|
| 5 |
Characterization of arsenphosphosilicate glass films for VLSI applications—Part I. Composition and physicochemical properties
|
Zambov, L.
|
|
1991
|
34 |
11 |
p. 1231-1237
7 p.
|
artikel
|
| 6 |
Characterization of arsenphosphosilicate glass films for VLSI applications—Part II. Step coverage and planarization
|
Zambov, L.
|
|
1991
|
34 |
11 |
p. 1239-1246
8 p.
|
artikel
|
| 7 |
Comments on “Novel hall effect spectroscopy of impurity levels in semiconductors”
|
Hoffmann, Hans J.
|
|
1991
|
34 |
11 |
p. 1309-1310
2 p.
|
artikel
|
| 8 |
Decay of photovoltage of junction diodes
|
Jonscher, Andrew K.
|
|
1991
|
34 |
11 |
p. 1201-1206
6 p.
|
artikel
|
| 9 |
Editorial: Software survey section
|
|
|
1991
|
34 |
11 |
p. I-III
nvt p.
|
artikel
|
| 10 |
Effect of avalanche-induced light emission on the multiplication factor in bipolar junction transistors
|
Sheng-Lyang Jang,
|
|
1991
|
34 |
11 |
p. 1191-1196
6 p.
|
artikel
|
| 11 |
Enhanced conductivity and breakdown of oxides grown on heavily implanted substrates
|
Hegarty, Christopher J.
|
|
1991
|
34 |
11 |
p. 1207-1213
7 p.
|
artikel
|
| 12 |
Evaluation of electroluminescence current and voltage dependence in ridge waveguide laser structures
|
Beister, G.
|
|
1991
|
34 |
11 |
p. 1255-1262
8 p.
|
artikel
|
| 13 |
High-frequency output characteristics of AlGaAs/GaAs heterojunction bipolar transistors for large-signal applications
|
Chen, J.
|
|
1991
|
34 |
11 |
p. 1263-1273
11 p.
|
artikel
|
| 14 |
Improving hot-electron hardness of narrow channel MOSFETs by fluorine implantation
|
Nishioka, Yasushiro
|
|
1991
|
34 |
11 |
p. 1197-1200
4 p.
|
artikel
|
| 15 |
New physical model of multiplication-induced breakdown in MOSFETs
|
Skotnicki, Tomasz
|
|
1991
|
34 |
11 |
p. 1297-1307
11 p.
|
artikel
|
| 16 |
Obituary
|
Van Vliet, C.M.
|
|
1991
|
34 |
11 |
p. i-ii
nvt p.
|
artikel
|
| 17 |
Relationship between solid and vapor phase compositions for In x Ga1−x Sb epilayers grown by MOCVD
|
Juang, F.S.
|
|
1991
|
34 |
11 |
p. 1225-1229
5 p.
|
artikel
|
| 18 |
Reply to “Comments on ‘novel Hall effect spectroscopy of impurity levels in semiconductors’”
|
Kleveland, B.
|
|
1991
|
34 |
11 |
p. 1311-
1 p.
|
artikel
|
| 19 |
Simulation of the turn-on transient behavior of amorphous-silicon thin-film transistors
|
Luo, Fei
|
|
1991
|
34 |
11 |
p. 1289-1295
7 p.
|
artikel
|
| 20 |
Small-signal a.c. impedance of an Si resistor at liquid-helium temperatures
|
Dierickx, B.
|
|
1991
|
34 |
11 |
p. 1215-1224
10 p.
|
artikel
|
| 21 |
Sub-micron self-aligned-gate HEMT for microwave applications
|
Schink, H.
|
|
1991
|
34 |
11 |
p. 1247-1250
4 p.
|
artikel
|
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