| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A model of 1 f noise in polysilicon resistors
|
Jang, Sheng-Lyang
|
|
1990
|
33 |
9 |
p. 1155-1162
8 p.
|
article
|
| 2 |
Analysis of a novel 3-D magnetic field sensor
|
Abu Nailah, S.M.
|
|
1990
|
33 |
9 |
p. 1119-1124
6 p.
|
article
|
| 3 |
An analysis for the potential of floating guard rings
|
Suh, Kang-Deog
|
|
1990
|
33 |
9 |
p. 1125-1129
5 p.
|
article
|
| 4 |
An analytical d.c. model for MODFETs based on a new three-piece velocity-electric field characteristic
|
Xia, Qincui
|
|
1990
|
33 |
9 |
p. 1179-1187
9 p.
|
article
|
| 5 |
An improved model of “generation width” for pulsed MOS C-t transient analysis
|
Zhang, Xiumiao
|
|
1990
|
33 |
9 |
p. 1139-1142
4 p.
|
article
|
| 6 |
Application of split-gate and dual-gate field-effect transistor designs to InAs field-effect transistors
|
Longenbach, K.F.
|
|
1990
|
33 |
9 |
p. 1211-1213
3 p.
|
article
|
| 7 |
Combined technique for capacitance and slow trapping characterization of narrow bandgap MIS structures
|
Adar, R.
|
|
1990
|
33 |
9 |
p. 1197-1206
10 p.
|
article
|
| 8 |
Drain engineering of hot-carrier-resistant MOSFETs using concave silicon surfaces for deep submicron VLSI technology
|
Ratnam, P.
|
|
1990
|
33 |
9 |
p. 1163-1168
6 p.
|
article
|
| 9 |
Editorial - software survey section
|
|
|
1990
|
33 |
9 |
p. I-III
nvt p.
|
article
|
| 10 |
Electrical properties of GaAs homojunctions grown by MOCVD on GaAs and Si substrates
|
Jiao, K.L.
|
|
1990
|
33 |
9 |
p. 1131-1137
7 p.
|
article
|
| 11 |
Improvement of field and time dependent breakdown of trench capacitor using O/N/O dielectric and rounding off technique
|
Fang, Y.K.
|
|
1990
|
33 |
9 |
p. 1151-1154
4 p.
|
article
|
| 12 |
Is Npn or Pnp the better choice for millimetre-wave AlGaAs/GaAs heterojunction bipolar transistors?
|
Gao, Guang-Bo
|
|
1990
|
33 |
9 |
p. 1209-1210
2 p.
|
article
|
| 13 |
Noise properties of epitaxial GaAs layers
|
Ahmed, Mohamed Kamel
|
|
1990
|
33 |
9 |
p. 1143-1149
7 p.
|
article
|
| 14 |
Optical effects in modulation-doped-field-effect-transistor
|
Singhal, A.
|
|
1990
|
33 |
9 |
p. 1214-1216
3 p.
|
article
|
| 15 |
Simultaneous radiation damage and thermal annealing of solar cells
|
Kishore, R.
|
|
1990
|
33 |
9 |
p. 1207-1208
2 p.
|
article
|
| 16 |
The influence of Fermi-level pinning at the GaAs substrate on HEMT threshold voltage
|
Krantz, Richard J.
|
|
1990
|
33 |
9 |
p. 1189-1195
7 p.
|
article
|
| 17 |
The modeling of multi-layer structures and the impact of emitter-base coupling on the determination of base recombination parameters
|
Newhouse, M.A.
|
|
1990
|
33 |
9 |
p. 1113-1118
6 p.
|
article
|
| 18 |
Two-dimensional simulation on the electric field spike of indium antimonide charge injection devices
|
Wu, Chao-Wen
|
|
1990
|
33 |
9 |
p. 1169-1178
10 p.
|
article
|
Journal description