| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Characterization and modeling of materials for photolithographic simulation
|
Spence, C.A.
|
|
1990
|
33 |
6 |
p. 625-638
14 p.
|
artikel
|
| 2 |
Comparison of phosphorus, arsenic and boron implants into bulk silicon and SOS
|
Amberiadis, Kostas
|
|
1990
|
33 |
6 |
p. 651-654
4 p.
|
artikel
|
| 3 |
Device-related material properties of heavily doped gallium arsenide
|
Lundstrom, M.S.
|
|
1990
|
33 |
6 |
p. 693-704
12 p.
|
artikel
|
| 4 |
Dielectric characterisation of semiconductors
|
Jonscher, Andrew K.
|
|
1990
|
33 |
6 |
p. 737-742
6 p.
|
artikel
|
| 5 |
Editorial — Software survey section
|
|
|
1990
|
33 |
6 |
p. I-III
nvt p.
|
artikel
|
| 6 |
Efficient modeling parameter extraction for dual pearson approach to simulation of implanted impurity profiles in silicon
|
Park, Changhae
|
|
1990
|
33 |
6 |
p. 645-650
6 p.
|
artikel
|
| 7 |
Extraction of MOSFET carrier mobility characteristics and calibration of a mobility model for numerical device simulation
|
Lee, Shiuh-Wuu
|
|
1990
|
33 |
6 |
p. 719-726
8 p.
|
artikel
|
| 8 |
Extraction of semiconductor dopant profiles from spreading resistance data: An inverse problem
|
Choo, S.C.
|
|
1990
|
33 |
6 |
p. 783-791
9 p.
|
artikel
|
| 9 |
Foreword
|
Bulucea, Constantin
|
|
1990
|
33 |
6 |
p. v-
1 p.
|
artikel
|
| 10 |
High temperature millisecond annealing of arsenic implanted silicon
|
Altrip, J.L.
|
|
1990
|
33 |
6 |
p. 659-664
6 p.
|
artikel
|
| 11 |
Impact ionization in silicon: A review and update
|
Maes, W.
|
|
1990
|
33 |
6 |
p. 705-718
14 p.
|
artikel
|
| 12 |
Interface recombination velocity and lifetime in GaAs and AlGaAs/GaAs structures
|
Borrego, J.M.
|
|
1990
|
33 |
6 |
p. 733-736
4 p.
|
artikel
|
| 13 |
Minority carrier mobility model for device simulation
|
Shigyo, Naoyuki
|
|
1990
|
33 |
6 |
p. 727-731
5 p.
|
artikel
|
| 14 |
Modeling co-implanted silicon and beryllium in gallium arsenide
|
Deal, Michael D.
|
|
1990
|
33 |
6 |
p. 665-673
9 p.
|
artikel
|
| 15 |
Novel hall effect spectroscopy of impurity levels in semiconductors
|
Kleveland, Bendik
|
|
1990
|
33 |
6 |
p. 743-752
10 p.
|
artikel
|
| 16 |
Optimization of the spreading resistance profiling technique for submicron structures
|
Berkowitz, H.L.
|
|
1990
|
33 |
6 |
p. 773-781
9 p.
|
artikel
|
| 17 |
Physical parameter extraction by inverse device modelling: Application to one- and two-dimensional doping profiling
|
Ouwerling, G.J.L.
|
|
1990
|
33 |
6 |
p. 757-771
15 p.
|
artikel
|
| 18 |
Physics for numerical simulation of silicon and gallium arsenide transistors
|
Bennett, Herbert S.
|
|
1990
|
33 |
6 |
p. 675-691
17 p.
|
artikel
|
| 19 |
Range distributions of ion implanted boron, phosphorus and arsenic dopants in thermally reacted titanium silicide thin films
|
Crean, G.M.
|
|
1990
|
33 |
6 |
p. 655-658
4 p.
|
artikel
|
| 20 |
Range of high energy phosphorus and medium energy boron ions implanted in polymers
|
Tsoukalas, D.
|
|
1990
|
33 |
6 |
p. 639-643
5 p.
|
artikel
|
| 21 |
Study of thin oxide tunnel parameters for polysilicon emitters, using computer simulation and experimental results
|
Roulston, D.J.
|
|
1990
|
33 |
6 |
p. 753-755
3 p.
|
artikel
|
| 22 |
The use of simulation in semiconductor technology development
|
Cole, D.C.
|
|
1990
|
33 |
6 |
p. 591-623
33 p.
|
artikel
|
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